JP4804294B2 - 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法 - Google Patents

原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法 Download PDF

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Publication number
JP4804294B2
JP4804294B2 JP2006254980A JP2006254980A JP4804294B2 JP 4804294 B2 JP4804294 B2 JP 4804294B2 JP 2006254980 A JP2006254980 A JP 2006254980A JP 2006254980 A JP2006254980 A JP 2006254980A JP 4804294 B2 JP4804294 B2 JP 4804294B2
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Japan
Prior art keywords
pattern
data
map
coherent
mask
Prior art date
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Expired - Fee Related
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JP2006254980A
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English (en)
Japanese (ja)
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JP2008076682A5 (enExample
JP2008076682A (ja
Inventor
賢治 山添
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006254980A priority Critical patent/JP4804294B2/ja
Priority to US11/855,698 priority patent/US7761840B2/en
Priority to DE602007005564T priority patent/DE602007005564D1/de
Priority to EP07018089A priority patent/EP1903389B1/en
Publication of JP2008076682A publication Critical patent/JP2008076682A/ja
Publication of JP2008076682A5 publication Critical patent/JP2008076682A5/ja
Application granted granted Critical
Publication of JP4804294B2 publication Critical patent/JP4804294B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2006254980A 2006-09-20 2006-09-20 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法 Expired - Fee Related JP4804294B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006254980A JP4804294B2 (ja) 2006-09-20 2006-09-20 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
US11/855,698 US7761840B2 (en) 2006-09-20 2007-09-14 Mask data generation including a main pattern and an auxiliary pattern
DE602007005564T DE602007005564D1 (de) 2006-09-20 2007-09-14 Maskendatenerstellungsprogramm, Maskendatenerstellungsverfahren, Maskenherstellungsverfahren, Belichtungsverfahren und Verfahren zur Herstellung eines Bauelementes
EP07018089A EP1903389B1 (en) 2006-09-20 2007-09-14 Mask data generation program, mask data generation method, mask fabrication method, exposure method, and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006254980A JP4804294B2 (ja) 2006-09-20 2006-09-20 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2008076682A JP2008076682A (ja) 2008-04-03
JP2008076682A5 JP2008076682A5 (enExample) 2009-11-12
JP4804294B2 true JP4804294B2 (ja) 2011-11-02

Family

ID=38969418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006254980A Expired - Fee Related JP4804294B2 (ja) 2006-09-20 2006-09-20 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法

Country Status (4)

Country Link
US (1) US7761840B2 (enExample)
EP (1) EP1903389B1 (enExample)
JP (1) JP4804294B2 (enExample)
DE (1) DE602007005564D1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008076683A (ja) * 2006-09-20 2008-04-03 Canon Inc 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
JP4804294B2 (ja) 2006-09-20 2011-11-02 キヤノン株式会社 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
JP4402145B2 (ja) 2007-10-03 2010-01-20 キヤノン株式会社 算出方法、生成方法、プログラム、露光方法及び原版作成方法
JP2009231769A (ja) * 2008-03-25 2009-10-08 Toshiba Corp 投影露光方法
JP5106220B2 (ja) * 2008-04-10 2012-12-26 キヤノン株式会社 原版データ生成プログラム、原版データ生成方法、照明条件決定プログラム、照明条件決定方法およびデバイス製造方法
JP2009277712A (ja) * 2008-05-12 2009-11-26 Canon Inc 測定装置および露光装置
JP5086926B2 (ja) * 2008-07-15 2012-11-28 キヤノン株式会社 算出方法、プログラム及び露光方法
JP2011075624A (ja) * 2009-09-29 2011-04-14 Toppan Printing Co Ltd フォトマスク及びその製造方法
JP5279745B2 (ja) 2010-02-24 2013-09-04 株式会社東芝 マスクレイアウト作成方法、マスクレイアウト作成装置、リソグラフィ用マスクの製造方法、半導体装置の製造方法、およびコンピュータが実行可能なプログラム
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP6192372B2 (ja) * 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3146500B2 (ja) * 1991-02-28 2001-03-19 株式会社ニコン 露光方法、半導体素子の形成方法、及びフォトマスク
US5357311A (en) 1991-02-25 1994-10-18 Nikon Corporation Projection type light exposure apparatus and light exposure method
AU2001241496A1 (en) * 2000-02-14 2001-08-27 Asml Masktools B.V. A method of improving photomask geometry
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6792591B2 (en) 2001-02-28 2004-09-14 Asml Masktools B.V. Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
US6519760B2 (en) 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
TWI315027B (en) 2002-04-23 2009-09-21 Canon Kabushiki Kaish Mask designing method, and exposure method for illuminatiing a mask and exposing an object
SG125109A1 (en) * 2003-01-14 2006-09-29 Asml Masktools Bv Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
CN1573554A (zh) 2003-01-14 2005-02-02 Asml蒙片工具有限公司 用于接触孔掩模的光学逼近校正设计的方法
CN100576066C (zh) * 2003-10-31 2009-12-30 Asml蒙片工具有限公司 优化图案强度轮廓的方法
US7506299B2 (en) 2003-12-19 2009-03-17 Asml Holding N.V. Feature optimization using interference mapping lithography
SG125970A1 (en) 2003-12-19 2006-10-30 Asml Masktools Bv Feature optimization using interference mapping lithography
US7640522B2 (en) 2006-01-14 2009-12-29 Tela Innovations, Inc. Method and system for placing layout objects in a standard-cell layout
JP2007273560A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 光強度分布シミュレーション方法
JP4804294B2 (ja) 2006-09-20 2011-11-02 キヤノン株式会社 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法

Also Published As

Publication number Publication date
EP1903389A1 (en) 2008-03-26
US20080070131A1 (en) 2008-03-20
DE602007005564D1 (de) 2010-05-12
JP2008076682A (ja) 2008-04-03
US7761840B2 (en) 2010-07-20
EP1903389B1 (en) 2010-03-31

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