DE602007005564D1 - Maskendatenerstellungsprogramm, Maskendatenerstellungsverfahren, Maskenherstellungsverfahren, Belichtungsverfahren und Verfahren zur Herstellung eines Bauelementes - Google Patents

Maskendatenerstellungsprogramm, Maskendatenerstellungsverfahren, Maskenherstellungsverfahren, Belichtungsverfahren und Verfahren zur Herstellung eines Bauelementes

Info

Publication number
DE602007005564D1
DE602007005564D1 DE602007005564T DE602007005564T DE602007005564D1 DE 602007005564 D1 DE602007005564 D1 DE 602007005564D1 DE 602007005564 T DE602007005564 T DE 602007005564T DE 602007005564 T DE602007005564 T DE 602007005564T DE 602007005564 D1 DE602007005564 D1 DE 602007005564D1
Authority
DE
Germany
Prior art keywords
manufacturing
data creation
mask
mask data
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007005564T
Other languages
German (de)
English (en)
Inventor
Kenji Yamazoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602007005564D1 publication Critical patent/DE602007005564D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE602007005564T 2006-09-20 2007-09-14 Maskendatenerstellungsprogramm, Maskendatenerstellungsverfahren, Maskenherstellungsverfahren, Belichtungsverfahren und Verfahren zur Herstellung eines Bauelementes Active DE602007005564D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006254980A JP4804294B2 (ja) 2006-09-20 2006-09-20 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法

Publications (1)

Publication Number Publication Date
DE602007005564D1 true DE602007005564D1 (de) 2010-05-12

Family

ID=38969418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007005564T Active DE602007005564D1 (de) 2006-09-20 2007-09-14 Maskendatenerstellungsprogramm, Maskendatenerstellungsverfahren, Maskenherstellungsverfahren, Belichtungsverfahren und Verfahren zur Herstellung eines Bauelementes

Country Status (4)

Country Link
US (1) US7761840B2 (enExample)
EP (1) EP1903389B1 (enExample)
JP (1) JP4804294B2 (enExample)
DE (1) DE602007005564D1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4804294B2 (ja) 2006-09-20 2011-11-02 キヤノン株式会社 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
JP2008076683A (ja) * 2006-09-20 2008-04-03 Canon Inc 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
JP4402145B2 (ja) 2007-10-03 2010-01-20 キヤノン株式会社 算出方法、生成方法、プログラム、露光方法及び原版作成方法
JP2009231769A (ja) * 2008-03-25 2009-10-08 Toshiba Corp 投影露光方法
JP5106220B2 (ja) * 2008-04-10 2012-12-26 キヤノン株式会社 原版データ生成プログラム、原版データ生成方法、照明条件決定プログラム、照明条件決定方法およびデバイス製造方法
JP2009277712A (ja) * 2008-05-12 2009-11-26 Canon Inc 測定装置および露光装置
JP5086926B2 (ja) 2008-07-15 2012-11-28 キヤノン株式会社 算出方法、プログラム及び露光方法
JP2011075624A (ja) * 2009-09-29 2011-04-14 Toppan Printing Co Ltd フォトマスク及びその製造方法
JP5279745B2 (ja) * 2010-02-24 2013-09-04 株式会社東芝 マスクレイアウト作成方法、マスクレイアウト作成装置、リソグラフィ用マスクの製造方法、半導体装置の製造方法、およびコンピュータが実行可能なプログラム
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP6192372B2 (ja) * 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3146500B2 (ja) * 1991-02-28 2001-03-19 株式会社ニコン 露光方法、半導体素子の形成方法、及びフォトマスク
US5357311A (en) * 1991-02-25 1994-10-18 Nikon Corporation Projection type light exposure apparatus and light exposure method
AU2001241496A1 (en) 2000-02-14 2001-08-27 Asml Masktools B.V. A method of improving photomask geometry
TWI285295B (en) * 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
US6792591B2 (en) * 2001-02-28 2004-09-14 Asml Masktools B.V. Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
EP1357426A3 (en) * 2002-04-23 2005-11-23 Canon Kabushiki Kaisha Method for setting mask pattern and its illumination condition
EP1439419B1 (en) * 2003-01-14 2006-10-04 ASML MaskTools B.V. Method and apparatus for providing optical proximity correction features to a reticle pattern for optical lithography
SG139530A1 (en) * 2003-01-14 2008-02-29 Asml Masktools Bv Method of optical proximity correction design for contact hole mask
US7231629B2 (en) * 2003-10-31 2007-06-12 Asml Masktools B.V. Feature optimization using enhanced interference mapping lithography
SG125970A1 (en) * 2003-12-19 2006-10-30 Asml Masktools Bv Feature optimization using interference mapping lithography
US7506299B2 (en) * 2003-12-19 2009-03-17 Asml Holding N.V. Feature optimization using interference mapping lithography
US7640522B2 (en) * 2006-01-14 2009-12-29 Tela Innovations, Inc. Method and system for placing layout objects in a standard-cell layout
JP2007273560A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 光強度分布シミュレーション方法
JP4804294B2 (ja) 2006-09-20 2011-11-02 キヤノン株式会社 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法

Also Published As

Publication number Publication date
US7761840B2 (en) 2010-07-20
EP1903389B1 (en) 2010-03-31
EP1903389A1 (en) 2008-03-26
US20080070131A1 (en) 2008-03-20
JP2008076682A (ja) 2008-04-03
JP4804294B2 (ja) 2011-11-02

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