JP4803968B2 - 薄膜電極 - Google Patents
薄膜電極 Download PDFInfo
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- JP4803968B2 JP4803968B2 JP2004104946A JP2004104946A JP4803968B2 JP 4803968 B2 JP4803968 B2 JP 4803968B2 JP 2004104946 A JP2004104946 A JP 2004104946A JP 2004104946 A JP2004104946 A JP 2004104946A JP 4803968 B2 JP4803968 B2 JP 4803968B2
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- Prior art keywords
- electrode layer
- thin film
- solid solution
- nickel
- gallium nitride
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- 239000010409 thin film Substances 0.000 title claims description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 96
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 77
- 229910002601 GaN Inorganic materials 0.000 claims description 74
- 239000006104 solid solution Substances 0.000 claims description 74
- 229910052759 nickel Inorganic materials 0.000 claims description 35
- 229910052737 gold Inorganic materials 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910052703 rhodium Inorganic materials 0.000 claims description 15
- 229910052707 ruthenium Inorganic materials 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 description 51
- 238000000137 annealing Methods 0.000 description 40
- ATTFYOXEMHAYAX-UHFFFAOYSA-N magnesium nickel Chemical compound [Mg].[Ni] ATTFYOXEMHAYAX-UHFFFAOYSA-N 0.000 description 28
- 238000000151 deposition Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 24
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 23
- 230000008569 process Effects 0.000 description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 17
- 238000002834 transmittance Methods 0.000 description 17
- 239000011777 magnesium Substances 0.000 description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 12
- 229910052749 magnesium Inorganic materials 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 239000010948 rhodium Substances 0.000 description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910019080 Mg-H Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910021476 group 6 element Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 150000002259 gallium compounds Chemical class 0.000 description 3
- -1 gallium nitride compound Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- BXNFVPMHMPQBRO-UHFFFAOYSA-N magnesium nickel(2+) oxygen(2-) Chemical compound [O--].[O--].[Mg++].[Ni++] BXNFVPMHMPQBRO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
Description
(1)窒化ガリウム表面上での実効キャリアー濃度を増加させる:Ni−X固溶体の優れた水素親和力を利用し、Mg−H結合を破壊する;
(2)短波長領域における光透過率を高め、仕事関数を増大させる:酸化ニッケル(NiO)に少量のX元素を添加し、Ni−X酸化物(NipXqO)を形成させる(A. Azens et al., Thin Solid Films 422, 2002, 1);
(3)ドーピング効果を向上させる:Ni−X固溶体に可溶化されたX元素をアニールする(M. H. G. Jacobs, P. J. Spencer, J. Chem. Phys. 90, 1993, 167);
(4)多量のガリウム空孔を形成させる:マトリックス金属としてのNi、又はX元素と、ガリウムとを反応させて、化合物を形成させる;
(5)エネルギーバンドギャップの原理に基づいて、高品質のオーミック接触を形成する:蒸着されたNi系固溶体をアニールして酸化物を形成させる。これは、p型窒化ガリウムのオーミック接触を容易に形成することができる点で有利である。
p型窒化ガリウム(GaN)層を超音波洗浄器(ultrasonic bath)中に入れ、トリクロロエチレン、アセトン、メタノール、及び蒸留水を用いて60℃の温度でそれぞれ5分ずつ洗浄した。その後、洗浄されたp型窒化ガリウム層に残留している水分を完全に除去するために、p型窒化ガリウム層を、100℃で10分間のハードベーキング(hard baking)工程に供した。次に、フォトレジストを4000rpmでp型窒化ガリウム層上にスピンコーティングした。その後、88℃で10分間のソフトベーキング(soft baking)工程に供した。p型窒化ガリウム層上のマスクパターンを現像するために、マスクと窒化ガリウム層とを並べ、22.8mWの強度でUVに10秒間露光させて、得られた試料を現像液と蒸留水との混合溶液(現像液:蒸留水=1:4)中に浸漬させて、15秒間程度現像した。
ニッケル−マグネシウム(Ni−Mg)固溶体を蒸着させる工程までは前記実施例1と同様に行った。その後、電子ビーム蒸着器を用いて白金(Pt)を100Åの厚さで蒸着させてキャッピング層を形成し、さらにアセトンを用いたリフト−オフ工程に供した。得られた試料を急速加熱炉中に入れ、空気雰囲気下において450〜650℃で1分間アニールし、オーミック接触を形成するための薄膜電極を製造した。本実施例により得られた薄膜電極の特性を図8に示す。
ニッケル−マグネシウム(Ni−Mg)固溶体を蒸着させる工程までは前記実施例1と同様に行った。その後、電子ビーム蒸着器を用いてパラジウム(Pd)を100Åの厚さで蒸着させてキャッピング層を形成し、さらにアセトンを用いたリフト−オフ工程に供した。得られた試料を急速加熱炉中に入れ、空気雰囲気下において450℃で1分間アニールし、オーミック接触を形成するための薄膜電極を製造した。本実施例により得られた薄膜電極の特性を図9に示す。
ニッケル−マグネシウム(Ni−Mg)固溶体を60Åの厚さで蒸着させる工程までは前記実施例1と同様に行った。その後、電子ビーム蒸着器を用いて、ルテニウム(Ru)を40Åの厚さで蒸着させてキャッピング層を形成し、さらにアセトンを用いたリフト−オフ工程に供した。得られた試料を急速加熱炉中に入れ、空気雰囲気下において450℃で1分間アニールし、オーミック接触を形成するための薄膜電極を製造した。本実施例により得られた薄膜電極の特性を図10に示す。
窒化ガリウム層上に電極層を蒸着させる前の工程までは実施例1と同様に行った。その後、電子ビーム蒸着器を用いて、ルテニウム(Ru)、ニッケル−マグネシウム(Ni−Mg)固溶体をそれぞれ40Åおよび60Åの厚さで順に蒸着させ、アセトンを用いたリフト−オフ工程に供した。得られた試料を急速加熱炉中に入れ、空気雰囲気下において350〜650℃で1分間アニールし、オーミック接触を形成するための薄膜電極を製造した。本実施例により得られた薄膜電極の特性を図11に示す。
ニッケル−亜鉛(Ni−Zn)固溶体を50Åの厚さで蒸着させる工程までは前記実施例1と同様に行った。その後、電子ビーム蒸着器を用いて、金(Au)を50Åの厚さで蒸着させてキャッピング層を形成し、さらにアセトンを用いたリフト−オフ工程に供した。得られた試料を急速加熱炉中に入れ、空気雰囲気下において350〜650℃で1分間アニールし、オーミック接触を形成するための薄膜電極を製造した。本実施例により得られた薄膜電極の特性を図12に示す。
窒化ガリウム層上に電極層を蒸着させる前の工程までは前記実施例1と同様に行った。その後、電子ビーム蒸着器を用いて、ニッケル(Ni)、ニッケル−亜鉛(Ni−Zn)固溶体、及び金(Au)をそれぞれ20Å、30Å、及び50Åの厚さで順に蒸着させ、アセトンを用いたリフト−オフ工程に供した。得られた試料を急速加熱炉中に入れ、空気雰囲気下において350〜650℃で1分間アニールし、オーミック接触を形成するための薄膜電極を製造した。本実施例により得られた薄膜電極の特性を図13に示す。
ニッケル−亜鉛(Ni−Zn)固溶体を30Åの厚さで蒸着させる工程までは前記実施例1と同様に行った。その後、電子ビーム蒸着器を用いて、ニッケル(Ni)及び金を(Au)をそれぞれ20Å及び50Åの厚さで蒸着させ、さらにアセトンを用いたリフト−オフ工程に供した。得られた試料を急速加熱炉中に入れ、空気雰囲気下において350〜650℃で1分間アニールし、オーミック接触を形成するための薄膜電極を製造した。本実施例により得られた薄膜電極の特性を図14に示す。
2:p型窒化ガリウム層、
3:第1電極層、
4:第2電極層、
5:第3電極層、
6:第4電極層。
Claims (7)
- 発光ダイオード又はレーザーダイオードにおいてオーミック接触を形成するための薄膜電極において、
p型窒化ガリウム層上に積層され、Ni−X固溶体を含有する第1電極層と、
前記第1電極層上に積層され、Au、Pt、Pd、Ni、Ru、RhおよびReからなる群から選択される少なくとも1種以上の元素を含有する第2電極層と、
を含み、
前記Ni−X固溶体が、ニッケル(Ni)をマトリックス金属とし、前記X元素はSc、Y及びSbからなる群から選択される少なくとも1種以上であることを特徴とする、薄膜電極。 - 前記第2電極層上に積層され、Al、Ag、及びRhからなる群から選択される少なくとも1種以上の元素を含有する第3電極層をさらに含む、請求項1に記載の薄膜電極。
- 前記第2電極層上に積層され、透明導電性酸化物及び透明導電性窒化物からなる群から選択される少なくとも1種以上の化合物を含有する第3電極層をさらに含む、請求項1に記載の薄膜電極。
- 前記第3電極層上に積層され、Al、Ag、及びRhからなる群から選択される少なくとも1種以上の元素を含有する第4電極層をさらに含む、請求項3に記載の薄膜電極。
- 発光ダイオード又はレーザーダイオードにおいてオーミック接触を形成するための薄膜電極において、
p型窒化ガリウム層上に積層され、Ni−X固溶体を含有する第1電極層と、
前記第1電極層上に積層され、透明導電性酸化物及び透明導電性窒化物からなる群から選択される少なくとも1種以上の化合物を含有する第2電極層と、
を含み、
前記Ni−X固溶体が、ニッケル(Ni)をマトリックス金属とし、前記X元素はSc、Y及びSbからなる群から選択される少なくとも1種以上であることを特徴とする、薄膜電極。 - 前記第2電極層上に積層され、Al、Ag、及びRhからなる群から選択される少なくとも1種以上の元素を含有する第3電極層をさらに含む、請求項5に記載の薄膜電極。
- 発光ダイオード又はレーザーダイオードにおいてオーミック接触を形成するための薄膜電極において、
p型窒化ガリウム層上に積層され、Ni−X固溶体を含有する第1電極層と、
前記第1電極層上に積層され、Al、Ag、及びRhからなる群から選択される少なくとも1種以上の元素を含有する第2電極層と、
を含み、
前記Ni−X固溶体が、ニッケル(Ni)をマトリックス金属とし、前記X元素はSc、Y及びSbからなる群から選択される少なくとも1種以上であることを特徴とする、薄膜電極。
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