JP4799640B2 - 現像処理装置 - Google Patents
現像処理装置 Download PDFInfo
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- JP4799640B2 JP4799640B2 JP2009127160A JP2009127160A JP4799640B2 JP 4799640 B2 JP4799640 B2 JP 4799640B2 JP 2009127160 A JP2009127160 A JP 2009127160A JP 2009127160 A JP2009127160 A JP 2009127160A JP 4799640 B2 JP4799640 B2 JP 4799640B2
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- 239000000758 substrate Substances 0.000 claims description 270
- 239000007788 liquid Substances 0.000 claims description 134
- 238000004140 cleaning Methods 0.000 claims description 46
- 230000007246 mechanism Effects 0.000 claims description 36
- 238000003860 storage Methods 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 230000003028 elevating effect Effects 0.000 claims description 8
- 229920003051 synthetic elastomer Polymers 0.000 claims description 3
- 229920003002 synthetic resin Polymers 0.000 claims description 3
- 239000000057 synthetic resin Substances 0.000 claims description 3
- 239000005061 synthetic rubber Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- -1 polychlorotrifluoroethylene Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Environmental & Geological Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
2 回転基台
3 助走ステージ(外周板)
4 基板保持台
5 ノズルヘッド
7 液貯留空間
17 回転駆動機構
28a,28b,28c 支持ピン
28A 昇降駆動機構
29a 小径部
29b 大径部
29c 段部
70 バックリンスノズル(第2の洗浄液供給ノズル)
80 基板搬送アーム
90 コントローラ(制御手段)
100 超音波発振器
101 振動子
102 超音波駆動電源
Claims (4)
- 基板を水平状態に保持する回転可能な回転基台と、
上記回転基台を回転駆動する回転駆動機構と、
上記回転基台と共に回転可能で、かつ回転基台に保持された基板の外周部を囲み、基板表面の同一平面上に基板の表面上から連続する液膜を形成するための外周板と、
上記回転基台に対して相対的に昇降移動可能で、かつ、基板を吸着保持すると共に、上記回転基台と外周板に密着して液貯留空間を形成する基板保持台と、
上記回転基台及び基板保持台に保持された基板と液貯留空間に向かって洗浄液を供給して液張りを行う洗浄液供給ノズルと、
上記基板保持台に保持された基板に対する現像液の供給と吸引を同時に行うノズルヘッドと、
上記回転基台の上方に移動可能な基板搬送アームとの間で基板の受け渡しを行う昇降可能な複数の支持ピンと、
上記複数の支持ピンを昇降移動する昇降駆動機構と、
上記回転駆動機構と昇降駆動機構を制御する制御手段と、を具備し、
上記複数の支持ピンのうちの少なくとも一つの支持ピンの上端部に、水平状態の基板の下面を支持する第1の支持面と、傾斜状態の基板の下端部を支持する第2の支持面を形成し、
上記回転駆動機構により上記回転基台に保持された基板の水平面上の角度を調整可能に形成し、
上記制御手段からの制御信号に基づいて、上記基板搬送アームとの間で基板を受け渡しする際は、基板の角度を上記支持ピンの第1の支持面で基板を水平状態に支持可能な位置にし、上記基板及び液貯留空間内に洗浄液を供給又は供給後は、上記第2の支持面で傾斜状態の基板の下端部を支持可能な位置にし、かつ、上記第2の支持面で基板の下端部を支持した傾斜状態で基板を下降して、基板下面に付着する気泡を除去する、
ことを特徴とする現像処理装置。 - 請求項1記載の現像処理装置において、
上記支持ピンの上端部に小径部を設け、この小径部の上端面が第1の支持面を形成し、小径部と大径部との段部が第2の支持面を形成し、かつ上記第1の支持面及び第2の支持面を形成する支持ピンの上端部を合成樹脂製部材又は合成ゴム製部材にて形成してなる、ことを特徴とする現像処理装置。 - 請求項1又は2記載の現像処理装置において、
上記複数の支持ピンによって傾斜状に支持された基板の下面に向かって洗浄液を供給し、液貯留空間内の洗浄液に流動を与える第2の洗浄液供給ノズルを更に具備してなる、ことを特徴とする現像処理装置。 - 請求項1又は2記載の現像処理装置において、
上記基板保持台における液貯留空間を形成する底部に振動子を配設すると共に、この振動子に超音波発振器を接続してなる、ことを特徴とする現像処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009127160A JP4799640B2 (ja) | 2009-05-27 | 2009-05-27 | 現像処理装置 |
KR1020100049111A KR101191009B1 (ko) | 2009-05-27 | 2010-05-26 | 현상 처리 장치 |
TW099116837A TWI384333B (zh) | 2009-05-27 | 2010-05-26 | Development processing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009127160A JP4799640B2 (ja) | 2009-05-27 | 2009-05-27 | 現像処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010278094A JP2010278094A (ja) | 2010-12-09 |
JP4799640B2 true JP4799640B2 (ja) | 2011-10-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009127160A Active JP4799640B2 (ja) | 2009-05-27 | 2009-05-27 | 現像処理装置 |
Country Status (3)
Country | Link |
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JP (1) | JP4799640B2 (ja) |
KR (1) | KR101191009B1 (ja) |
TW (1) | TWI384333B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104076622A (zh) * | 2014-06-16 | 2014-10-01 | 京东方科技集团股份有限公司 | 一种显影装置 |
KR102292370B1 (ko) * | 2019-08-16 | 2021-08-20 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
WO2021192837A1 (ja) * | 2020-03-24 | 2021-09-30 | 東京エレクトロン株式会社 | 除去加工装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03120029U (ja) * | 1990-03-22 | 1991-12-10 | ||
JPH0697145A (ja) * | 1992-09-17 | 1994-04-08 | Fujitsu Ltd | 半導体製造装置 |
JPH1197508A (ja) * | 1997-09-18 | 1999-04-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP4737638B2 (ja) * | 2007-01-19 | 2011-08-03 | 東京エレクトロン株式会社 | 現像処理装置 |
-
2009
- 2009-05-27 JP JP2009127160A patent/JP4799640B2/ja active Active
-
2010
- 2010-05-26 KR KR1020100049111A patent/KR101191009B1/ko active IP Right Grant
- 2010-05-26 TW TW099116837A patent/TWI384333B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI384333B (zh) | 2013-02-01 |
TW201116945A (en) | 2011-05-16 |
KR20100128252A (ko) | 2010-12-07 |
JP2010278094A (ja) | 2010-12-09 |
KR101191009B1 (ko) | 2012-10-16 |
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