JP4798480B2 - 半導体ウェーハの製造方法および両面研削方法並びに半導体ウェーハの両面研削装置 - Google Patents

半導体ウェーハの製造方法および両面研削方法並びに半導体ウェーハの両面研削装置 Download PDF

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Publication number
JP4798480B2
JP4798480B2 JP2005152882A JP2005152882A JP4798480B2 JP 4798480 B2 JP4798480 B2 JP 4798480B2 JP 2005152882 A JP2005152882 A JP 2005152882A JP 2005152882 A JP2005152882 A JP 2005152882A JP 4798480 B2 JP4798480 B2 JP 4798480B2
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semiconductor wafer
silicon wafer
double
grinding
chamfering
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JP2005152882A
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JP2006332281A (ja
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公康 二村
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Sumco Techxiv Corp
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Sumco Techxiv Corp
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Priority to TW095112643A priority patent/TW200731380A/zh
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2005152882A 2005-05-25 2005-05-25 半導体ウェーハの製造方法および両面研削方法並びに半導体ウェーハの両面研削装置 Expired - Lifetime JP4798480B2 (ja)

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JP2005152882A JP4798480B2 (ja) 2005-05-25 2005-05-25 半導体ウェーハの製造方法および両面研削方法並びに半導体ウェーハの両面研削装置
TW095112643A TW200731380A (en) 2005-05-25 2006-04-10 Semiconductor wafer manufacturing method, semiconductor wafer double-sided grinding method, and semiconductor wafer double-sided grinding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005152882A JP4798480B2 (ja) 2005-05-25 2005-05-25 半導体ウェーハの製造方法および両面研削方法並びに半導体ウェーハの両面研削装置

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JP2006332281A JP2006332281A (ja) 2006-12-07
JP4798480B2 true JP4798480B2 (ja) 2011-10-19

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JP (1) JP4798480B2 (enrdf_load_stackoverflow)
TW (1) TW200731380A (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4985451B2 (ja) * 2008-02-14 2012-07-25 信越半導体株式会社 ワークの両頭研削装置およびワークの両頭研削方法
JP4780142B2 (ja) 2008-05-22 2011-09-28 信越半導体株式会社 ウェーハの製造方法
DE102009025243B4 (de) 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
JP2011131284A (ja) * 2009-12-22 2011-07-07 Disco Abrasive Syst Ltd 研削装置
JP2013045909A (ja) * 2011-08-25 2013-03-04 Sumco Corp 半導体ウェーハの製造方法
JP5872947B2 (ja) * 2012-04-05 2016-03-01 光洋機械工業株式会社 両頭平面研削におけるワーク搬入出方法及び両頭平面研削盤
CN109360852A (zh) * 2018-08-14 2019-02-19 上海芯石微电子有限公司 一种降低芯片减薄碎片率的硅片倒角结构及方法
CN114227524A (zh) * 2021-12-30 2022-03-25 西安奕斯伟材料科技有限公司 双面研磨装置和双面研磨方法
CN114734319B (zh) * 2022-03-20 2023-08-22 深圳市陆和神州科技有限公司 一种半导体材料处理系统及方法
CN114770366B (zh) * 2022-05-17 2023-11-17 西安奕斯伟材料科技股份有限公司 一种硅片双面研磨装置的静压板及硅片双面研磨装置
CN115070604B (zh) * 2022-06-09 2023-09-29 西安奕斯伟材料科技股份有限公司 双面研磨装置和双面研磨方法
CN114986381B (zh) * 2022-06-16 2023-08-22 西安奕斯伟材料科技股份有限公司 双面研磨装置和双面研磨方法
CN115972078A (zh) * 2022-12-27 2023-04-18 西安奕斯伟材料科技股份有限公司 一种用于对硅片进行双面研磨的装置及方法
CN120038618B (zh) * 2025-04-18 2025-07-29 浙江求是半导体设备有限公司 一种晶圆双面减薄方法和系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154655A (ja) * 1997-11-21 1999-06-08 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JPH11267964A (ja) * 1998-03-20 1999-10-05 Speedfam Co Ltd 平面研磨装置及びそれに用いるキャリヤ
JP2000135670A (ja) * 1998-10-30 2000-05-16 Okamoto Machine Tool Works Ltd ウエハの化学機械研磨方法
JP3951496B2 (ja) * 1999-03-30 2007-08-01 光洋機械工業株式会社 薄板円板状ワークの両面研削装置
JP2002217147A (ja) * 2001-01-16 2002-08-02 Tokyo Seimitsu Co Ltd ウェーハ研磨装置のウェーハ回収方法及び装置

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TWI353633B (enrdf_load_stackoverflow) 2011-12-01
JP2006332281A (ja) 2006-12-07
TW200731380A (en) 2007-08-16

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