JP4783868B1 - 固体撮像素子及びその製造方法並びに撮像装置 - Google Patents
固体撮像素子及びその製造方法並びに撮像装置 Download PDFInfo
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- JP4783868B1 JP4783868B1 JP2011003499A JP2011003499A JP4783868B1 JP 4783868 B1 JP4783868 B1 JP 4783868B1 JP 2011003499 A JP2011003499 A JP 2011003499A JP 2011003499 A JP2011003499 A JP 2011003499A JP 4783868 B1 JP4783868 B1 JP 4783868B1
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Abstract
【解決手段】画素電極膜125と、画素電極膜125に対向する対向電極膜131と、画素電極膜125と対向電極膜131とで挟まれる受光層130とを含む光電変換部を、半導体基板121上方に二次元アレイ状に配置した固体撮像素子は、半導体基板121に各光電変換部に対応して設けられ、受光層130で発生して画素電極膜125に移動した電荷量に応じた信号を読み出す信号読出回路と、画素電極膜125が配置される領域の外側に配置され、画素電極膜125と同一面上にかつ同一材料で形成された前記光電変換部を検査するためのテスト用端子114a,bとを備える。この固体撮像素子の製造途中の段階でテスト用端子114a,bで受光層130の検査を行い、不良品と判定したときは以後の製造工程の継続を中止する。
【選択図】図4
Description
21 撮影レンズ
26 デジタル信号処理部
29 システム制御部
100 光電変換膜積層型固体撮像素子
101 撮像素子チップ
102 透明ガラス基板
103 回路基板
104 ワイヤ
110 半導体ウェハ
112 撮像領域
113 接続パッド
114a,114b テスト用端子
121 半導体基板
125 画素電極膜
125a (テスト用の光電変換部の)画素電極膜
125b テスト用電極膜
126 ビアプラグ
126a テスト用画素電極膜のビアプラグ
126b テスト用端子のビアプラグ
130 受光層
130a 光電変換層(有機膜)
130b 電荷ブロッキング層
131 対向電極膜
132 保護膜
Claims (10)
- 画素電極膜と、前記画素電極膜に対向する対向電極膜と、前記画素電極膜と前記対向電極膜とで挟まれる受光層とを含む光電変換部を、半導体基板上方に二次元アレイ状に配置した固体撮像素子であって、
前記受光層で発生して前記画素電極膜に移動した電荷量に応じた信号を読み出す信号読出回路と、
前記光電変換部が配置される領域の外側に配置され、前記画素電極膜と同一面上にかつ同一材料により形成された前記光電変換部を検査するためのテスト用端子とを備える固体撮像素子。 - 請求項1記載の固体撮像素子であって、
前記光電変換部が配置される領域の外側に配置されたテスト用の光電変換部を備え、
前記テスト用端子が、前記テスト用の光電変換部の画素電極膜と電気的に接続される第一のテスト用端子と、前記テスト用の光電変換部の対向電極膜と電気的に接続される第二のテスト用端子とにより構成される固体撮像素子。 - 請求項2記載の固体撮像素子であって、
前記受光層と前記対向電極膜は、前記テスト用の光電変換部を含む全ての光電変換部で共通の一枚構成であり、
前記半導体基板側から順に前記画素電極膜、前記受光層、前記対向電極膜が形成され、
前記全ての光電変換部が形成される領域の外側に配置され、前記画素電極膜と同一面上にかつ同一材料により形成されたテスト用電極膜を備え、
前記対向電極膜は、前記テスト用電極膜を覆って形成され、
前記テスト用の光電変換部の前記画素電極膜と前記第一のテスト用端子が配線によって接続され、
前記テスト用電極膜と前記第二のテスト用端子が配線によって接続される固体撮像素子。 - 請求項1〜3のいずれか1項記載の半導体集積回路であって、
前記受光層は有機材料を含んで構成される固体撮像素子。 - 画素電極膜と、前記画素電極膜に対向する対向電極膜と、前記画素電極膜と前記対向電極膜とで挟まれる受光層とを含む光電変換部を、半導体基板上方に二次元アレイ状に配置した固体撮像素子の製造方法であって、
前記受光層で発生して前記画素電極膜に移動した電荷量に応じた信号を読み出す信号読出回路を形成した半導体基板上方の平坦面上に導電性材料を成膜し、これをパターニングして、前記画素電極膜と前記光電変換部を検査するためのテスト用端子とを同時に形成する画素電極膜及びテスト用端子形成工程を備える固体撮像素子の製造方法。 - 請求項5記載の固体撮像素子の製造方法であって、
前記画素電極膜及びテスト用端子形成工程では、前記テスト用端子として、テスト用の光電変換部の画素電極膜と電気的に接続される第一のテスト用端子と、前記テスト用の光電変換部の対向電極膜と電気的に接続される第二のテスト用端子とを形成する固体撮像素子の製造方法。 - 請求項6記載の固体撮像素子の製造方法であって、
前記画素電極膜及びテスト用端子形成工程では、前記テスト用の光電変換部を含む全ての前記光電変換部が形成される領域の外側に配置されるテスト用電極膜と、前記全ての光電変換部の前記画素電極膜と、前記テスト用端子とを同時に形成し、
前記画素電極膜及びテスト用端子形成工程の後、前記画素電極膜上に受光層を形成する工程と、
前記受光層及び前記テスト用電極膜上に前記対向電極膜を形成する工程と、
前記テスト用の光電変換部の前記画素電極膜と前記第一のテスト用端子とを接続する配線層を形成する工程と、
前記テスト用電極膜と前記第二のテスト用端子とを接続する配線層を形成する工程とを備える固体撮像素子の製造方法。 - 請求項5〜7のいずれか1項記載の固体撮像素子の製造方法であって、
前記受光層が有機材料を含んで構成される固体撮像素子の製造方法。 - 請求項5〜8のいずれか1項記載の固体撮像素子の製造方法であって、
製造途中の段階で前記テスト用端子を用いて前記受光層の機能検査を行い、前記受光層が不良品と判定したときは以後の製造工程の継続を中止する固体撮像素子の製造方法。 - 請求項1〜4のいずれか1項記載の固体撮像素子を備える撮像装置。
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JPS633454A (ja) * | 1986-06-24 | 1988-01-08 | Seiko Epson Corp | 固体撮像装置及びその製造方法 |
JP2762195B2 (ja) | 1992-07-17 | 1998-06-04 | 三信建設工業株式会社 | アンカー用ケーシングパイプ引抜き方法及び装置 |
US5483155A (en) * | 1992-11-20 | 1996-01-09 | Eastman Kodak Company | Test system and method for dynamic testing of a plurality of packaged same-type charge coupled device image sensors |
US6330354B1 (en) * | 1997-05-01 | 2001-12-11 | International Business Machines Corporation | Method of analyzing visual inspection image data to find defects on a device |
EP1176637A4 (en) * | 1999-01-22 | 2006-09-13 | Hitachi Ltd | INTEGRATED SEMICONDUCTOR CIRCUIT AND MANUFACTURE THEREOF |
JP4192335B2 (ja) * | 1999-05-24 | 2008-12-10 | 株式会社デンソー | 光センサic及びその検査方法 |
JP2002090422A (ja) * | 2000-09-13 | 2002-03-27 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004296464A (ja) * | 2003-03-25 | 2004-10-21 | Denso Corp | 半導体装置 |
JP2008047667A (ja) * | 2006-08-14 | 2008-02-28 | Fujifilm Corp | 固体撮像素子及びその製造方法並びに固体撮像素子用半導体ウェハ |
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2011
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- 2011-03-15 WO PCT/JP2011/056088 patent/WO2011115126A1/ja active Application Filing
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WO2011115126A1 (ja) | 2011-09-22 |
KR20130004610A (ko) | 2013-01-11 |
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