JP4782596B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP4782596B2
JP4782596B2 JP2006080846A JP2006080846A JP4782596B2 JP 4782596 B2 JP4782596 B2 JP 4782596B2 JP 2006080846 A JP2006080846 A JP 2006080846A JP 2006080846 A JP2006080846 A JP 2006080846A JP 4782596 B2 JP4782596 B2 JP 4782596B2
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etching
gas
plasma
processing method
semiconductor film
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JP2007258440A5 (enExample
JP2007258440A (ja
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剛 島田
幸太郎 藤本
淳 須山
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2006080846A 2006-03-23 2006-03-23 プラズマ処理方法 Active JP4782596B2 (ja)

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JP2006080846A JP4782596B2 (ja) 2006-03-23 2006-03-23 プラズマ処理方法

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JP2006080846A JP4782596B2 (ja) 2006-03-23 2006-03-23 プラズマ処理方法

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JP2010287570A Division JP5259691B2 (ja) 2010-12-24 2010-12-24 プラズマ処理方法

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JP2007258440A JP2007258440A (ja) 2007-10-04
JP2007258440A5 JP2007258440A5 (enExample) 2009-02-26
JP4782596B2 true JP4782596B2 (ja) 2011-09-28

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060541A (ja) * 2006-08-29 2008-03-13 Korea Electronics Telecommun Ｇｓｔカルコゲニドパターンを備える相変化メモリ素子の製造方法
JP2010287615A (ja) 2009-06-09 2010-12-24 Tokyo Electron Ltd Ｇｅ−Ｓｂ−Ｔｅ膜の成膜方法および記憶媒体
JP2015183260A (ja) * 2014-03-25 2015-10-22 株式会社日立国際電気 クリーニング方法、基板処理装置およびプログラム
JP5913463B2 (ja) * 2014-07-16 2016-04-27 東京エレクトロン株式会社 Ｇｅ−Ｓｂ−Ｔｅ膜の成膜方法
US11355703B2 (en) * 2020-06-16 2022-06-07 International Business Machines Corporation Phase change device with interfacing first and second semiconductor layers
CN115498105A (zh) * 2022-10-17 2022-12-20 北京北方华创微电子装备有限公司 阻变存储器的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3052321B2 (ja) * 1989-02-23 2000-06-12 セイコーエプソン株式会社 化合物半導体のエッチング方法
JPH02299227A (ja) * 1989-05-15 1990-12-11 Seiko Epson Corp 化合物半導体のエッチング方法
JPH0336725A (ja) * 1989-07-04 1991-02-18 Seiko Epson Corp 化合物半導体のエッチング方法
JP2004146500A (ja) * 2002-10-23 2004-05-20 Matsushita Electric Ind Co Ltd 薄膜の加工方法
US20050040136A1 (en) * 2003-07-21 2005-02-24 Yao-Sheng Lee Method for making memory elements

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