JP4779656B2 - ガスセンサ - Google Patents

ガスセンサ Download PDF

Info

Publication number
JP4779656B2
JP4779656B2 JP2006003905A JP2006003905A JP4779656B2 JP 4779656 B2 JP4779656 B2 JP 4779656B2 JP 2006003905 A JP2006003905 A JP 2006003905A JP 2006003905 A JP2006003905 A JP 2006003905A JP 4779656 B2 JP4779656 B2 JP 4779656B2
Authority
JP
Japan
Prior art keywords
gas
layer
gas sensor
sensitive layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006003905A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007187476A5 (enExample
JP2007187476A (ja
Inventor
大輔 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006003905A priority Critical patent/JP4779656B2/ja
Priority to US11/621,876 priority patent/US8578758B2/en
Publication of JP2007187476A publication Critical patent/JP2007187476A/ja
Publication of JP2007187476A5 publication Critical patent/JP2007187476A5/ja
Application granted granted Critical
Publication of JP4779656B2 publication Critical patent/JP4779656B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
JP2006003905A 2006-01-11 2006-01-11 ガスセンサ Expired - Fee Related JP4779656B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006003905A JP4779656B2 (ja) 2006-01-11 2006-01-11 ガスセンサ
US11/621,876 US8578758B2 (en) 2006-01-11 2007-01-10 Gas sensor and method for production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006003905A JP4779656B2 (ja) 2006-01-11 2006-01-11 ガスセンサ

Publications (3)

Publication Number Publication Date
JP2007187476A JP2007187476A (ja) 2007-07-26
JP2007187476A5 JP2007187476A5 (enExample) 2009-02-12
JP4779656B2 true JP4779656B2 (ja) 2011-09-28

Family

ID=38342753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006003905A Expired - Fee Related JP4779656B2 (ja) 2006-01-11 2006-01-11 ガスセンサ

Country Status (2)

Country Link
US (1) US8578758B2 (enExample)
JP (1) JP4779656B2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100949546B1 (ko) * 2007-12-06 2010-03-25 한국전자통신연구원 단층 정열형 다공성 금속 산화물 가스 센서 및 그 제조 방법
US8739604B2 (en) * 2007-12-20 2014-06-03 Amphenol Thermometrics, Inc. Gas sensor and method of making
JP5029542B2 (ja) * 2008-09-02 2012-09-19 ソニー株式会社 一次元ナノ構造体の製造方法及びその装置
JP5638765B2 (ja) * 2009-03-25 2014-12-10 ウチヤ・サーモスタット株式会社 ナノ粒子を含む堆積膜の製造方法
KR101044306B1 (ko) * 2009-05-08 2011-07-01 군산대학교산학협력단 가스 센서
KR101283685B1 (ko) 2009-11-23 2013-07-08 한국전자통신연구원 환경가스 센서 및 그의 제조방법
CN102411018B (zh) * 2010-09-24 2014-02-12 比亚迪股份有限公司 一种片式氧传感器
CN102768689B (zh) * 2011-04-30 2014-11-26 深圳光启高等理工研究院 一种超材料单元结构的绘制方法
US9119748B2 (en) * 2011-10-28 2015-09-01 Kimberly-Clark Worldwide, Inc. Electronic discriminating device for body exudate detection
JP5897306B2 (ja) * 2011-11-14 2016-03-30 フィガロ技研株式会社 金属酸化物半導体ガスセンサ及びその製造方法
CN102768227B (zh) * 2012-06-11 2015-04-22 江苏大学 一种基于色素敏化TiO2薄膜的气体传感器制作方法
CN102788819A (zh) * 2012-07-19 2012-11-21 华中科技大学 一种氧化锡室温气敏元件及其制备方法
US20140182358A1 (en) * 2012-12-27 2014-07-03 Rosemount Analytical Inc. Gas detection system with moisture removal
RU2526225C1 (ru) * 2013-02-07 2014-08-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Омский государственный технический университет" Газовый датчик
CN103217460A (zh) * 2013-03-21 2013-07-24 浙江大学 一种基于四氧化三钴纳米线阵列的酒精气体传感器及其制备方法
CN104981688B (zh) 2013-05-29 2018-07-13 罗斯蒙特分析公司 具有湿度和温度补偿的硫化氢气体探测器
JP6128598B2 (ja) * 2013-08-21 2017-05-17 国立研究開発法人産業技術総合研究所 金属酸化物半導体式ガスセンサ
CN104034763A (zh) * 2014-05-28 2014-09-10 南京工业大学 一种混杂贵金属掺粒子和金属氧化物薄膜的集成气体传感器及其制备方法
CN104297436B (zh) * 2014-11-03 2016-04-20 北京联合大学 一种检测甲醛和甲醇的交叉敏感材料
JP6512578B2 (ja) * 2015-08-18 2019-05-15 国立大学法人神戸大学 気体分子成分検出装置、検出方法および検出装置の作製方法
CN105259211A (zh) * 2015-10-13 2016-01-20 武汉工程大学 一种气体传感器纳米敏感材料、其浆料及其制备方法和应用
CN105259214A (zh) * 2015-10-31 2016-01-20 武汉工程大学 甲苯、二甲苯气敏材料及其制备以及甲苯、二甲苯气敏器件的制备方法
RU2649654C2 (ru) * 2015-11-13 2018-04-04 Федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный технический университет" Датчик угарного газа
CN105823800B (zh) * 2016-03-23 2018-10-12 云南大学 一种检测甲醇气体的敏感材料
US10497486B2 (en) * 2016-12-13 2019-12-03 Honeywell International Inc. Robust sensing film for fire gases
KR101858712B1 (ko) * 2017-03-09 2018-05-21 주식회사 지에버 반도체형 가스 센서
CN108088875A (zh) * 2017-12-22 2018-05-29 辽宁师范大学 基于单根ZnO微米线的非平衡电桥式乙醇气体传感器
CN109085191A (zh) * 2018-07-06 2018-12-25 四川大学 一种碳基SnO2微纳米球的制备方法及其在扫描电镜校准方面的应用
CN110857928A (zh) * 2018-08-23 2020-03-03 吉福有限公司 半导体型气体传感器、多重传感装置及其识别方法
KR20210038552A (ko) * 2018-09-05 2021-04-07 오사까 가스 가부시키가이샤 가스 검지 장치
JP7287776B2 (ja) * 2018-12-18 2023-06-06 Ｎｉｓｓｈａ株式会社 ガス検知方法、ガスセンサ及びガス検知装置
CN111707715B (zh) * 2020-07-21 2023-09-05 艾感科技(广东)有限公司 一种三维纳米管气体传感器阵列及其封装方法
CN113447531B (zh) * 2021-05-21 2024-04-16 西安电子科技大学芜湖研究院 一种氧化铟基气体传感器制作方法、检测甲醇的方法
CN113720879B (zh) * 2021-08-17 2023-10-03 华南师范大学 丙酮气敏材料和丙酮气体传感器的制备方法及其应用
CN115096953B (zh) * 2022-06-08 2024-10-22 上海海事大学 一种基于二维Ti3C2Tx/MOS复合材料的气体传感器及其制备方法
CN115452914B (zh) * 2022-08-12 2025-03-18 华中科技大学 燃料电池型h2气体传感器结构、膜电极及其制备方法
CN117990687B (zh) * 2024-01-19 2025-08-29 北京理工大学 维也里安定性试验系统及其安定性判别方法
CN118794996B (zh) * 2024-06-17 2025-08-26 长春大学 一种高性能乙炔气体传感器及其制备方法
CN118518603B (zh) * 2024-07-19 2025-01-24 宁波大学 一种微纳传感结构及其应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07198651A (ja) * 1993-12-28 1995-08-01 Riken Corp 薄膜ガスセンサー及びその製造方法
JPH0894560A (ja) * 1994-09-12 1996-04-12 Texas Instr Inc <Ti> 薄膜型ガスセンサー
JP4461634B2 (ja) 2001-04-25 2010-05-12 株式会社デンソー 薄膜型ガスセンサ及びその製造方法
JP2003279517A (ja) * 2002-03-25 2003-10-02 Osaka Gas Co Ltd ガス検出装置及びガス検出方法
JP4160806B2 (ja) * 2002-08-30 2008-10-08 日本特殊陶業株式会社 ガスセンサ素子
JP4219330B2 (ja) * 2002-11-27 2009-02-04 日本特殊陶業株式会社 酸化性ガスセンサ
JP4110961B2 (ja) * 2002-12-24 2008-07-02 株式会社デンソー ガスセンサ用ガス感応膜の製造方法
JP2005098947A (ja) * 2003-09-26 2005-04-14 Fuji Electric Fa Components & Systems Co Ltd 薄膜ガスセンサ
JP4585756B2 (ja) * 2003-10-31 2010-11-24 富士電機システムズ株式会社 半導体式ガスセンサ、および半導体式ガスセンサを用いたガスの監視方法
JP2005144569A (ja) 2003-11-12 2005-06-09 Hitachi Ltd 二次元配列構造体基板および該基板から剥離した微粒子
JP4691687B2 (ja) * 2004-05-11 2011-06-01 独立行政法人産業技術総合研究所 有機無機ハイブリッドガスセンサ材料及びその製造方法
JP4602000B2 (ja) * 2004-06-16 2010-12-22 株式会社鷺宮製作所 水素ガス検知素子、水素ガスセンサおよび水素ガス検知方法

Also Published As

Publication number Publication date
US20070199819A1 (en) 2007-08-30
JP2007187476A (ja) 2007-07-26
US8578758B2 (en) 2013-11-12

Similar Documents

Publication Publication Date Title
JP4779656B2 (ja) ガスセンサ
Reddy et al. Recent material advances and their mechanistic approaches for room temperature chemiresistive gas sensors
Das et al. Fabrication and characterization of ZnO single nanowire-based hydrogen sensor
Isaac et al. Characterization of tungsten oxide thin films produced by spark ablation for NO2 gas sensing
Zhang et al. Bilayer Au nanoparticle-decorated WO3 porous thin films: On-chip fabrication and enhanced NO2 gas sensing performances with high selectivity
Van Dang et al. Chlorine gas sensing performance of on-chip grown ZnO, WO3, and SnO2 nanowire sensors
Park et al. Synthesis, structure, and ethanol gas sensing properties of In2O3 nanorods decorated with Bi2O3 nanoparticles
Sharma et al. Enhanced response characteristics of SnO2 thin film based NO2 gas sensor integrated with nanoscaled metal oxide clusters
Gupta et al. A low temperature hydrogen sensor based on palladium nanoparticles
CN104569061B (zh) 金属氧化物半导体气体传感器及其制备方法
KR101495422B1 (ko) 산화아연 기반 수소 센서 및 그의 제조방법
Haidry et al. Remarkable improvement in hydrogen sensing characteristics with Pt/TiO2 interface control
US20190041352A1 (en) In-situ localized growth of porous metal oxide films on microheater platform for low temperature gas detection
JP2007187476A5 (enExample)
Dharmalingam et al. Quantification of Ethanol by Metal-Oxide-Based Resistive Sensors: A Review: Dharmalingam, Sivasubramaniam, and Parthiban
JP2005315700A (ja) 水素センサ及び水素の検知方法
KR101280498B1 (ko) 나노 구조를 갖는 금속산화물반도체 가스센서 및 그 제조방법
Liu et al. Fabrication of C-doped WO 3 nanoparticle cluster arrays from PS-b-P4VP for room temperature H 2 sensing
Chou et al. Oxygen sensor utilizing ultraviolet irradiation assisted ZnO nanorods under low operation temperature
Patil et al. Bismuth ferrite–silver nanowire flexible nanocomposites for room-temperature nitrogen dioxide sensing
Lai et al. Thermal oxidation CuO nanowire gas sensor for ozone detection applications
CN101135659A (zh) β－Ga2O3纳米线及其气体传感器的制备和实现快速响应的气体传感方法
Wang et al. Room-Temperature Chemiresistive Effect of ${\rm TiO} _ {2}\!-\!{\rm B} $ Nanowires to Nitroaromatic and Nitroamine Explosives
Kiefer et al. Large arrays of chemo-mechanical nanoswitches for ultralow-power hydrogen sensing
Zhan et al. Flame aerosol reactor synthesis of nanostructured SnO2 thin films: High gas-sensing properties by control of morphology

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081222

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081222

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20090528

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110216

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110301

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110418

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110607

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110620

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140715

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140715

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees