JP4776766B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4776766B2
JP4776766B2 JP2000326049A JP2000326049A JP4776766B2 JP 4776766 B2 JP4776766 B2 JP 4776766B2 JP 2000326049 A JP2000326049 A JP 2000326049A JP 2000326049 A JP2000326049 A JP 2000326049A JP 4776766 B2 JP4776766 B2 JP 4776766B2
Authority
JP
Japan
Prior art keywords
film
organic resin
region
substrate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000326049A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001196597A (ja
JP2001196597A5 (enExample
Inventor
美佐子 仲沢
健司 笠原
久 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000326049A priority Critical patent/JP4776766B2/ja
Publication of JP2001196597A publication Critical patent/JP2001196597A/ja
Publication of JP2001196597A5 publication Critical patent/JP2001196597A5/ja
Application granted granted Critical
Publication of JP4776766B2 publication Critical patent/JP4776766B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000326049A 1999-10-26 2000-10-25 半導体装置の作製方法 Expired - Fee Related JP4776766B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000326049A JP4776766B2 (ja) 1999-10-26 2000-10-25 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP30472299 1999-10-26
JP11-304722 1999-10-26
JP1999304722 1999-10-26
JP2000326049A JP4776766B2 (ja) 1999-10-26 2000-10-25 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011051223A Division JP5412454B2 (ja) 1999-10-26 2011-03-09 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001196597A JP2001196597A (ja) 2001-07-19
JP2001196597A5 JP2001196597A5 (enExample) 2007-12-20
JP4776766B2 true JP4776766B2 (ja) 2011-09-21

Family

ID=26564026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000326049A Expired - Fee Related JP4776766B2 (ja) 1999-10-26 2000-10-25 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4776766B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4683691B2 (ja) * 2000-05-16 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002368224A (ja) 2001-06-04 2002-12-20 Sony Corp 機能性デバイスおよびその製造方法
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
JP4008716B2 (ja) * 2002-02-06 2007-11-14 シャープ株式会社 フラットパネル表示装置およびその製造方法
EP1593159B1 (en) 2003-02-14 2013-05-29 Canon Kabushiki Kaisha Radiation image pickup device
JP2004265933A (ja) * 2003-02-14 2004-09-24 Canon Inc 放射線検出装置
JP2006203121A (ja) * 2005-01-24 2006-08-03 Seiko Epson Corp 半導体装置、アクティブマトリクス型電気光学装置、電子機器、および半導体装置の製造方法
KR101506124B1 (ko) 2009-09-04 2015-03-25 가부시끼가이샤 도시바 박막 트랜지스터 및 그 제조 방법
CN106797684B (zh) * 2014-10-17 2020-06-05 株式会社半导体能源研究所 发光装置、模块、电子设备以及发光装置的制造方法
CN108886855B (zh) * 2017-03-08 2020-04-14 堺显示器制品株式会社 有机el设备的制造方法及成膜装置
WO2019142261A1 (ja) * 2018-01-17 2019-07-25 シャープ株式会社 表示装置及びその製造方法
JP2020161580A (ja) * 2019-03-26 2020-10-01 株式会社ブイ・テクノロジー デバイス基板およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150200A (ja) * 1996-11-19 1998-06-02 Sharp Corp 薄膜トランジスタおよびその製造方法

Also Published As

Publication number Publication date
JP2001196597A (ja) 2001-07-19

Similar Documents

Publication Publication Date Title
JP5412454B2 (ja) 半導体装置の作製方法
JP5483763B2 (ja) 液晶表示装置
US6872607B2 (en) Method of manufacturing a semiconductor device
US7132687B2 (en) Semiconductor device and method of manufacturing the same
US6535535B1 (en) Laser irradiation method, laser irradiation apparatus, and semiconductor device
JP5331778B2 (ja) 半導体装置の作製方法
US9035314B2 (en) Method for manufacturing an electrooptical device
JP5078205B2 (ja) レーザ照射装置
JP2001196597A (ja) 半導体装置およびその作製方法
JP4637376B2 (ja) レーザ照射装置及び半導体装置の作製方法
JP4519278B2 (ja) 半導体装置の作製方法
JP4986332B2 (ja) 半導体装置の作製方法
JP4357672B2 (ja) 露光装置および露光方法および半導体装置の作製方法
JP4776773B2 (ja) 半導体装置の作製方法
JP4841740B2 (ja) 半導体装置の作製方法
JP5244274B2 (ja) 半導体装置の作製方法
JP4776767B2 (ja) 半導体装置の作製方法
JP4850326B2 (ja) 半導体装置の作製方法
JP4463374B2 (ja) 半導体装置の作製方法
JP4597295B2 (ja) 半導体装置およびその作製方法
JP2001326178A (ja) 半導体装置及びその作製方法
JP4397582B2 (ja) 半導体装置の作製方法
JP2004200559A6 (ja) レーザ照射方法および半導体装置の作製方法
JP2007043191A (ja) レーザ照射装置及びレーザ照射方法
JP2001345454A (ja) 半導体装置およびその作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071016

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071016

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101201

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110310

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110621

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110629

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140708

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140708

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees