JP4776608B2 - イメージセンサ及びイメージセンサの製造方法 - Google Patents
イメージセンサ及びイメージセンサの製造方法 Download PDFInfo
- Publication number
- JP4776608B2 JP4776608B2 JP2007288719A JP2007288719A JP4776608B2 JP 4776608 B2 JP4776608 B2 JP 4776608B2 JP 2007288719 A JP2007288719 A JP 2007288719A JP 2007288719 A JP2007288719 A JP 2007288719A JP 4776608 B2 JP4776608 B2 JP 4776608B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive type
- image sensor
- type conductive
- intrinsic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000010410 layer Substances 0.000 claims description 178
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000002955 isolation Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 239000011229 interlayer Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001168730 Simo Species 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000123112 Cardium Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Description
Claims (6)
- 回路領域が形成された半導体基板と、
前記半導体基板上に形成された複数の金属配線及び層間絶縁膜を含む金属配線層と、
前記金属配線層上に形成された下部電極と、
前記下部電極を囲むように形成された第1導電型伝導層と、
前記第1導電型伝導層が形成された前記金属配線層上に形成され、前記層間絶縁膜の上部表面を露出させるビアホールによって単位ピクセル別に形成された真性層と、
前記ビアホールの側壁と底だけに形成された第2導電型伝導層と、
前記第2導電型伝導層が形成された前記ビアホール内部に設けられ、金属物質からなるピクセル分離膜と、
前記真性層の上部に形成されたカラーフィルタと、
前記カラーフィルタおよび前記ピクセル分離膜の上部に形成され、前記ピクセル分離膜と連結された上部電極と、
を含むイメージセンサ。 - 前記カラーフィルタは隣接するカラーフィルタと離隔されて前記ピクセル分離膜の上部表面の少なくとも一部を露出させるように形成されたことを特徴とする請求項1に記載のイメージセンサ。
- 回路領域が形成された半導体基板上に複数の金属配線及び層間絶縁膜を含む金属配線層を形成する段階と、
前記金属配線層上に下部電極を形成する段階と、
前記下部電極上に第1導電型伝導層を形成する段階と、
前記第1導電型伝導層が形成された金属配線層上に真性層となる物質を蒸着する段階と、
前記真性層を蝕刻して前記第1導電型伝導層の間の層間絶縁膜の上部表面を露出させるビアホールを形成し、前記真性層を単位ピクセル別に分離する段階と、
前記ビアホールの側壁と底だけに第2導電型伝導層を形成する段階と、
前記第2導電型伝導層が形成された前記ビアホールの内部に金属物質からなるピクセル分離膜を形成する段階と、
前記真性層の上部にカラーフィルタを形成する段階と、
前記カラーフィルタおよびピクセル分離膜の上部に形成され、前記ピクセル分離膜と連結された上部電極を形成する段階と、
を含むイメージセンサの製造方法。 - 前記第1導電型伝導層を形成する段階は、
前記下部電極が形成された金属配線層上に第1導電型伝導層物質を蒸着する段階と、
前記下部電極を囲むように前記第1導電型伝導層物質を蝕刻する段階を含むことを特徴とする請求項3に記載のイメージセンサの製造方法。 - 前記ピクセル分離膜を形成する段階において、
前記第2導電型伝導層および前記真性層を含む前記半導体基板上に、前記ビアホールが埋め立てられるまで金属物質を蒸着させる段階と、
前記金属物質に平坦化工程を行って前記真性層の表面を露出させ、前記ビアホール内部に前記第2導電型伝導層および前記ピクセル分離膜を形成する段階と、
を含むことを特徴とする請求項3に記載のイメージセンサーの製造方法。 - 前記カラーフィルタは、単位ピクセル別に形成されて隣接するカラーフィルタと相互離隔され、下部の前記ピクセル分離膜の上部表面の少なくとも一部を露出させるように形成されることを特徴とする請求項3に記載のイメージセンサーの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070037357A KR100872719B1 (ko) | 2007-04-17 | 2007-04-17 | 이미지 센서 및 그의 제조방법 |
KR10-2007-0037357 | 2007-04-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008270710A JP2008270710A (ja) | 2008-11-06 |
JP4776608B2 true JP4776608B2 (ja) | 2011-09-21 |
Family
ID=39777625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007288719A Expired - Fee Related JP4776608B2 (ja) | 2007-04-17 | 2007-11-06 | イメージセンサ及びイメージセンサの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7812350B2 (ja) |
JP (1) | JP4776608B2 (ja) |
KR (1) | KR100872719B1 (ja) |
CN (1) | CN101290941B (ja) |
DE (1) | DE102007041190A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101053743B1 (ko) * | 2008-11-11 | 2011-08-02 | 주식회사 동부하이텍 | 이미지 센서의 제조 방법 |
JP4741015B2 (ja) * | 2009-03-27 | 2011-08-03 | 富士フイルム株式会社 | 撮像素子 |
JP5509962B2 (ja) * | 2010-03-19 | 2014-06-04 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
JP2014022448A (ja) * | 2012-07-13 | 2014-02-03 | Toshiba Corp | 固体撮像装置 |
US9935139B2 (en) * | 2014-08-22 | 2018-04-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor and method for forming the same |
US9490282B2 (en) * | 2015-03-19 | 2016-11-08 | Omnivision Technologies, Inc. | Photosensitive capacitor pixel for image sensor |
CN109155325A (zh) * | 2017-03-22 | 2019-01-04 | 索尼半导体解决方案公司 | 摄像装置和信号处理装置 |
CN108847417A (zh) * | 2018-05-24 | 2018-11-20 | 上海集成电路研发中心有限公司 | 一种减少串扰和提高灵敏度的像素单元结构和形成方法 |
CN111246132A (zh) * | 2019-08-22 | 2020-06-05 | 神亚科技股份有限公司 | 影像传感器及其制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4694317A (en) * | 1984-10-22 | 1987-09-15 | Fuji Photo Film Co., Ltd. | Solid state imaging device and process for fabricating the same |
JP2640162B2 (ja) * | 1990-06-04 | 1997-08-13 | シャープ株式会社 | カラーセンサ |
US5936261A (en) | 1998-11-18 | 1999-08-10 | Hewlett-Packard Company | Elevated image sensor array which includes isolation between the image sensors and a unique interconnection |
US6586812B1 (en) * | 1999-04-13 | 2003-07-01 | Agilent Technologies, Inc. | Isolation of alpha silicon diode sensors through ion implantation |
US6455836B1 (en) * | 2000-04-25 | 2002-09-24 | Agilent Technologies, Inc. | Metallic optical barrier for photo-detector array is also interconnecting electrode |
US6759262B2 (en) * | 2001-12-18 | 2004-07-06 | Agilent Technologies, Inc. | Image sensor with pixel isolation system and manufacturing method therefor |
US20040135209A1 (en) * | 2002-02-05 | 2004-07-15 | Tzu-Chiang Hsieh | Camera with MOS or CMOS sensor array |
US6809358B2 (en) * | 2002-02-05 | 2004-10-26 | E-Phocus, Inc. | Photoconductor on active pixel image sensor |
CN100388503C (zh) * | 2002-05-10 | 2008-05-14 | 浜松光子学株式会社 | 背面照射型光电二极管阵列及其制造方法 |
EP1516368B1 (fr) * | 2002-06-25 | 2008-01-23 | Commissariat A L'energie Atomique | Imageur |
KR100889365B1 (ko) * | 2004-06-11 | 2009-03-19 | 이상윤 | 3차원 구조의 영상센서와 그 제작방법 |
CN1922732B (zh) | 2004-02-25 | 2010-06-09 | S.O.I.Tec绝缘体上硅技术公司 | 光电检测装置 |
JP2005250935A (ja) | 2004-03-05 | 2005-09-15 | Nippon Telegr & Teleph Corp <Ntt> | 情報陳列閲覧方法、装置、システム及びプログラム |
JP2006186118A (ja) * | 2004-12-28 | 2006-07-13 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法および撮像装置 |
-
2007
- 2007-04-17 KR KR1020070037357A patent/KR100872719B1/ko not_active IP Right Cessation
- 2007-08-21 US US11/842,590 patent/US7812350B2/en not_active Expired - Fee Related
- 2007-08-31 DE DE102007041190A patent/DE102007041190A1/de not_active Withdrawn
- 2007-09-20 CN CN2007101534913A patent/CN101290941B/zh not_active Expired - Fee Related
- 2007-11-06 JP JP2007288719A patent/JP4776608B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080258248A1 (en) | 2008-10-23 |
DE102007041190A1 (de) | 2008-10-30 |
CN101290941B (zh) | 2011-06-22 |
US7812350B2 (en) | 2010-10-12 |
KR20080093528A (ko) | 2008-10-22 |
KR100872719B1 (ko) | 2008-12-05 |
CN101290941A (zh) | 2008-10-22 |
JP2008270710A (ja) | 2008-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4776608B2 (ja) | イメージセンサ及びイメージセンサの製造方法 | |
KR100851756B1 (ko) | 이미지 센서 및 그 제조방법 | |
US7755158B2 (en) | Image sensor and method for manufacturing thereof | |
US7808066B2 (en) | Image sensor and method of manufacturing the same | |
KR100913019B1 (ko) | 이미지 센서 및 그 제조방법 | |
JP4909250B2 (ja) | イメージセンサー及びその製造方法 | |
KR100881276B1 (ko) | 이미지 센서 및 그 제조방법 | |
KR100872990B1 (ko) | 이미지 센서 및 그의 제조 방법 | |
US7968366B2 (en) | Image sensor and method for manufacturing the same | |
KR100837556B1 (ko) | 이미지 센서 및 그의 제조방법 | |
KR100997312B1 (ko) | 이미지 센서 및 그의 제조방법 | |
JP2008227448A (ja) | イメージセンサ及びその製造方法 | |
KR100866255B1 (ko) | 이미지 센서 및 그 제조방법 | |
JP4897660B2 (ja) | イメージセンサ及びその製造方法 | |
KR20080101301A (ko) | 이미지 센서 및 그의 제조방법 | |
KR20090046170A (ko) | 이미지센서 및 그 제조방법 | |
US7952124B2 (en) | Image sensor and a method for manufacturing the same | |
KR100904828B1 (ko) | 이미지센서 및 그 제조방법 | |
KR100905595B1 (ko) | 이미지센서의 제조방법 | |
KR20090044117A (ko) | 이미지 센서 및 그 제조방법 | |
KR20090071229A (ko) | 이미지 센서 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101018 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101026 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110118 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110315 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110603 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110621 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110628 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140708 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |