JP4897660B2 - イメージセンサ及びその製造方法 - Google Patents
イメージセンサ及びその製造方法 Download PDFInfo
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- JP4897660B2 JP4897660B2 JP2007326805A JP2007326805A JP4897660B2 JP 4897660 B2 JP4897660 B2 JP 4897660B2 JP 2007326805 A JP2007326805 A JP 2007326805A JP 2007326805 A JP2007326805 A JP 2007326805A JP 4897660 B2 JP4897660 B2 JP 4897660B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010410 layer Substances 0.000 claims description 218
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- 238000002955 isolation Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 239000011229 interlayer Substances 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
20:金属配線層
21:層間絶縁膜
22:金属配線
30:下部電極
41:第1ピクセル分離膜
45:第1導電型伝導層
47:第2ピクセル分離膜
50:真性層
65:第2導電型伝導層
Claims (5)
- 回路領域を含む半導体基板と、
前記半導体基板上に形成された複数の金属配線及び層間絶縁膜を含む金属配線層と、
前記金属配線上に相互離隔するように形成された第1導電型伝導層と、
前記第1導電型伝導層の間に形成された第1ピクセル分離膜と、
前記第1導電型伝導層及び第1ピクセル分離膜を含む前記金属配線層の上部に形成された真性層と、
前記真性層上に形成された第2導電型伝導層と、
前記第2導電型伝導層の間に形成された第2ピクセル分離膜と、を含み、
前記第1ピクセル分離膜は、前記真性層と構成元素が同一な物質で形成され、かつ
前記第2ピクセル分離膜は、第1導電型伝導層と構成元素が同一な物質で形成されたことを特徴とするイメージセンサ。 - 回路領域を含む半導体基板上に、金属配線及び層間絶縁膜を含む金属配線層を形成するステップと、
前記金属配線の上部に、相互離隔するように、第1導電型伝導層を形成するステップと、
前記第1導電型伝導層が単位ピクセル別に絶縁されるよう、前記第1導電型伝導層の間に第1ピクセル分離膜を形成するステップと、
前記第1導電型伝導層及び第1ピクセル分離膜を含む半導体基板上に、真性層を形成するステップと、
前記真性層上に第2導電型伝導層を形成するステップと、
前記第2導電型伝導層が相互分離されるように、前記第2導電型伝導層の間に、第2ピクセル分離膜を第1導電型伝導層と構成元素が同一な物質で形成するステップと、
を含み、
前記第1ピクセル分離膜は、前記真性層と構成元素が同一な物質で形成されることを特徴とするイメージセンサの製造方法。 - 前記第1導電型伝導層を形成するステップは、
前記金属配線層上に真性層物質を蒸着するステップと、
前記真性層物質上に、前記金属配線に対応する領域の前記真性層物質を露出する第1マスクを形成するステップと、
前記第1マスクをイオン注入マスクとして使用して、第1導電型不純物を注入して、第1導電型伝導層及び第1ピクセル分離膜を形成するステップと、を含むことを特徴とする請求項2に記載のイメージセンサの製造方法。 - 前記第2導電型伝導層を形成するステップは、
前記真性層上に第2導電型伝導層物質を蒸着するステップと、
前記第2導電型伝導層物質上に、前記第1導電型伝導層と対応する領域に第2マスクを形成するステップと、
前記第2マスクをイオン注入マスクとして使用して、第1導電型不純物を注入して、第2ピクセル分離膜を形成するステップと、を含むことを特徴とする請求項2に記載のイメージセンサの製造方法。 - 前記第1導電型伝導層及び第2ピクセル分離膜は、イオン注入工程により形成されることを特徴とする請求項4に記載のイメージセンサの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0039099 | 2007-04-23 | ||
KR1020070039099A KR100871973B1 (ko) | 2007-04-23 | 2007-04-23 | 이미지 센서 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008270715A JP2008270715A (ja) | 2008-11-06 |
JP4897660B2 true JP4897660B2 (ja) | 2012-03-14 |
Family
ID=39777623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007326805A Expired - Fee Related JP4897660B2 (ja) | 2007-04-23 | 2007-12-19 | イメージセンサ及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7649219B2 (ja) |
JP (1) | JP4897660B2 (ja) |
KR (1) | KR100871973B1 (ja) |
CN (1) | CN101295726B (ja) |
DE (1) | DE102007041132A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100025687A1 (en) * | 2008-07-29 | 2010-02-04 | Chang Hun Han | Image sensor and method for manufacturing the same |
FR2944140B1 (fr) * | 2009-04-02 | 2011-09-16 | Commissariat Energie Atomique | Dispositif de detection d'image electronique |
US8753917B2 (en) * | 2010-12-14 | 2014-06-17 | International Business Machines Corporation | Method of fabricating photoconductor-on-active pixel device |
CN118016749A (zh) * | 2024-04-09 | 2024-05-10 | 长三角物理研究中心有限公司 | 一种cmos图像传感器的光电二极管及光电二极管单元 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57187976A (en) * | 1981-05-13 | 1982-11-18 | Matsushita Electric Ind Co Ltd | Semiconductor photoelectric converter |
JPH03101267A (ja) * | 1989-09-14 | 1991-04-26 | Matsushita Electric Ind Co Ltd | 薄膜イメージセンサ及びその製造方法 |
KR0136933B1 (ko) * | 1994-05-21 | 1998-04-24 | 문정환 | 씨씨디(ccd) 영상소자 및 제조방법 |
GB9710301D0 (en) * | 1997-05-21 | 1997-07-16 | Philips Electronics Nv | Image sensor and its manufacture |
US6586812B1 (en) * | 1999-04-13 | 2003-07-01 | Agilent Technologies, Inc. | Isolation of alpha silicon diode sensors through ion implantation |
US6501065B1 (en) * | 1999-12-29 | 2002-12-31 | Intel Corporation | Image sensor using a thin film photodiode above active CMOS circuitry |
US6759262B2 (en) * | 2001-12-18 | 2004-07-06 | Agilent Technologies, Inc. | Image sensor with pixel isolation system and manufacturing method therefor |
US6720594B2 (en) * | 2002-01-07 | 2004-04-13 | Xerox Corporation | Image sensor array with reduced pixel crosstalk |
KR100889365B1 (ko) * | 2004-06-11 | 2009-03-19 | 이상윤 | 3차원 구조의 영상센서와 그 제작방법 |
KR100672664B1 (ko) * | 2004-12-29 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 버티컬 씨모스 이미지 센서의 제조방법 |
-
2007
- 2007-04-23 KR KR1020070039099A patent/KR100871973B1/ko not_active IP Right Cessation
- 2007-08-21 US US11/842,580 patent/US7649219B2/en not_active Expired - Fee Related
- 2007-08-30 DE DE102007041132A patent/DE102007041132A1/de not_active Withdrawn
- 2007-09-25 CN CN2007101612310A patent/CN101295726B/zh not_active Expired - Fee Related
- 2007-12-19 JP JP2007326805A patent/JP4897660B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101295726B (zh) | 2010-06-23 |
DE102007041132A1 (de) | 2008-10-30 |
KR100871973B1 (ko) | 2008-12-08 |
JP2008270715A (ja) | 2008-11-06 |
KR20080094971A (ko) | 2008-10-28 |
US20080258189A1 (en) | 2008-10-23 |
CN101295726A (zh) | 2008-10-29 |
US7649219B2 (en) | 2010-01-19 |
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