JP4775455B2 - Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法 - Google Patents

Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法 Download PDF

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JP4775455B2
JP4775455B2 JP2009034004A JP2009034004A JP4775455B2 JP 4775455 B2 JP4775455 B2 JP 4775455B2 JP 2009034004 A JP2009034004 A JP 2009034004A JP 2009034004 A JP2009034004 A JP 2009034004A JP 4775455 B2 JP4775455 B2 JP 4775455B2
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layer
group iii
iii nitride
nitride semiconductor
semiconductor laser
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JP2009034004A
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Japanese (ja)
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JP2010192594A5 (enExample
JP2010192594A (ja
Inventor
慧 藤井
昌紀 上野
勝史 秋田
孝史 京野
祐介 善積
隆道 住友
陽平 塩谷
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2009034004A priority Critical patent/JP4775455B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to CN2009801569816A priority patent/CN102318152B/zh
Priority to PCT/JP2009/071661 priority patent/WO2010095340A1/ja
Priority to KR1020117020627A priority patent/KR101269315B1/ko
Priority to EP09840443A priority patent/EP2400604A1/en
Priority to TW098146573A priority patent/TW201034325A/zh
Publication of JP2010192594A publication Critical patent/JP2010192594A/ja
Publication of JP2010192594A5 publication Critical patent/JP2010192594A5/ja
Priority to US13/211,858 priority patent/US8548021B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2009034004A 2009-02-17 2009-02-17 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法 Expired - Fee Related JP4775455B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009034004A JP4775455B2 (ja) 2009-02-17 2009-02-17 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法
PCT/JP2009/071661 WO2010095340A1 (ja) 2009-02-17 2009-12-25 Iii族窒化物半導体レーザ、及びiii族窒化物半導体レーザを作製する方法
KR1020117020627A KR101269315B1 (ko) 2009-02-17 2009-12-25 Ⅲ족 질화물 반도체 레이저 및 ⅲ족 질화물 반도체 레이저를 제작하는 방법
EP09840443A EP2400604A1 (en) 2009-02-17 2009-12-25 Iii nitride semiconductor laser and method for manufacturing iii nitride semiconductor laser
CN2009801569816A CN102318152B (zh) 2009-02-17 2009-12-25 Ⅲ族氮化物半导体激光器及ⅲ族氮化物半导体激光器的制作方法
TW098146573A TW201034325A (en) 2009-02-17 2009-12-31 Iii nitride semiconductor laser and method for manufacturing iii nitride semiconductor laser
US13/211,858 US8548021B2 (en) 2009-02-17 2011-08-17 III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009034004A JP4775455B2 (ja) 2009-02-17 2009-02-17 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法

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JP2011146085A Division JP2011188000A (ja) 2011-06-30 2011-06-30 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法

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JP2010192594A JP2010192594A (ja) 2010-09-02
JP2010192594A5 JP2010192594A5 (enExample) 2011-06-23
JP4775455B2 true JP4775455B2 (ja) 2011-09-21

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US (1) US8548021B2 (enExample)
EP (1) EP2400604A1 (enExample)
JP (1) JP4775455B2 (enExample)
KR (1) KR101269315B1 (enExample)
CN (1) CN102318152B (enExample)
TW (1) TW201034325A (enExample)
WO (1) WO2010095340A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7933303B2 (en) 2009-06-17 2011-04-26 Sumitomo Electric Industries, Ltd. Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
JP5206699B2 (ja) 2010-01-18 2013-06-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP2011018784A (ja) * 2009-07-09 2011-01-27 Sony Corp 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置
JP2011023537A (ja) * 2009-07-15 2011-02-03 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
TWI560963B (en) * 2010-03-04 2016-12-01 Univ California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/- 15 degrees in the c-direction
US8189639B2 (en) * 2010-05-28 2012-05-29 Corning Incorporated GaN-based laser diodes with misfit dislocations displaced from the active region
JP5139555B2 (ja) * 2011-04-22 2013-02-06 住友電気工業株式会社 窒化物半導体レーザ、及びエピタキシャル基板
CN102227046A (zh) * 2011-05-25 2011-10-26 北京化工大学 一种氮化镓基半导体激光器及其制作方法
US20130100978A1 (en) * 2011-10-24 2013-04-25 The Regents Of The University Of California Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region
WO2015190171A1 (ja) * 2014-06-10 2015-12-17 ソニー株式会社 半導体光デバイス及びその製造方法並びに半導体光デバイス組立体
KR102390624B1 (ko) 2015-06-05 2022-04-26 오스텐도 테크놀로지스 인코포레이티드 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체
US10396240B2 (en) * 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
DE112019003671T5 (de) 2018-07-20 2021-04-08 Sony Semiconductor Solutions Corporation Halbleiterlichtemissionselement
JP7422496B2 (ja) * 2019-06-21 2024-01-26 古河機械金属株式会社 構造体、光デバイス、光デバイスの製造方法、構造体の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3206316B2 (ja) * 1994-08-12 2001-09-10 松下電器産業株式会社 半導体レーザ
JP2005072368A (ja) 2003-08-26 2005-03-17 Sony Corp 半導体発光素子、半導体レーザ素子、及び画像表示装置
US7408199B2 (en) * 2004-04-02 2008-08-05 Nichia Corporation Nitride semiconductor laser device and nitride semiconductor device
US7751455B2 (en) * 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
JP5113446B2 (ja) * 2006-08-11 2013-01-09 三洋電機株式会社 半導体素子およびその製造方法
WO2008100504A1 (en) 2007-02-12 2008-08-21 The Regents Of The University Of California Cleaved facet (ga,al,in)n edge-emitting laser diodes grown on semipolar {11-2n} bulk gallium nitride substrates
JP2009016684A (ja) * 2007-07-06 2009-01-22 Nichia Corp 半導体レーザ素子
JP2009021346A (ja) 2007-07-11 2009-01-29 Rohm Co Ltd 半導体発光素子
JP5286723B2 (ja) * 2007-09-14 2013-09-11 国立大学法人京都大学 窒化物半導体レーザ素子

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WO2010095340A1 (ja) 2010-08-26
KR101269315B1 (ko) 2013-05-29
US8548021B2 (en) 2013-10-01
KR20110112472A (ko) 2011-10-12
JP2010192594A (ja) 2010-09-02
EP2400604A1 (en) 2011-12-28
TW201034325A (en) 2010-09-16
CN102318152A (zh) 2012-01-11
US20120008660A1 (en) 2012-01-12
CN102318152B (zh) 2013-06-05

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