CN102318152B - Ⅲ族氮化物半导体激光器及ⅲ族氮化物半导体激光器的制作方法 - Google Patents

Ⅲ族氮化物半导体激光器及ⅲ族氮化物半导体激光器的制作方法 Download PDF

Info

Publication number
CN102318152B
CN102318152B CN2009801569816A CN200980156981A CN102318152B CN 102318152 B CN102318152 B CN 102318152B CN 2009801569816 A CN2009801569816 A CN 2009801569816A CN 200980156981 A CN200980156981 A CN 200980156981A CN 102318152 B CN102318152 B CN 102318152B
Authority
CN
China
Prior art keywords
layer
nitride semiconductor
semiconductor laser
iii
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009801569816A
Other languages
English (en)
Chinese (zh)
Other versions
CN102318152A (zh
Inventor
藤井慧
上野昌纪
秋田胜史
京野孝史
善积祐介
住友隆道
盐谷阳平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN102318152A publication Critical patent/CN102318152A/zh
Application granted granted Critical
Publication of CN102318152B publication Critical patent/CN102318152B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
CN2009801569816A 2009-02-17 2009-12-25 Ⅲ族氮化物半导体激光器及ⅲ族氮化物半导体激光器的制作方法 Expired - Fee Related CN102318152B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009034004A JP4775455B2 (ja) 2009-02-17 2009-02-17 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法
JP2009-034004 2009-02-17
PCT/JP2009/071661 WO2010095340A1 (ja) 2009-02-17 2009-12-25 Iii族窒化物半導体レーザ、及びiii族窒化物半導体レーザを作製する方法

Publications (2)

Publication Number Publication Date
CN102318152A CN102318152A (zh) 2012-01-11
CN102318152B true CN102318152B (zh) 2013-06-05

Family

ID=42633632

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801569816A Expired - Fee Related CN102318152B (zh) 2009-02-17 2009-12-25 Ⅲ族氮化物半导体激光器及ⅲ族氮化物半导体激光器的制作方法

Country Status (7)

Country Link
US (1) US8548021B2 (enExample)
EP (1) EP2400604A1 (enExample)
JP (1) JP4775455B2 (enExample)
KR (1) KR101269315B1 (enExample)
CN (1) CN102318152B (enExample)
TW (1) TW201034325A (enExample)
WO (1) WO2010095340A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7933303B2 (en) 2009-06-17 2011-04-26 Sumitomo Electric Industries, Ltd. Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
JP5206699B2 (ja) 2010-01-18 2013-06-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP2011018784A (ja) * 2009-07-09 2011-01-27 Sony Corp 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置
JP2011023537A (ja) * 2009-07-15 2011-02-03 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
TWI560963B (en) * 2010-03-04 2016-12-01 Univ California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/- 15 degrees in the c-direction
US8189639B2 (en) * 2010-05-28 2012-05-29 Corning Incorporated GaN-based laser diodes with misfit dislocations displaced from the active region
JP5139555B2 (ja) * 2011-04-22 2013-02-06 住友電気工業株式会社 窒化物半導体レーザ、及びエピタキシャル基板
CN102227046A (zh) * 2011-05-25 2011-10-26 北京化工大学 一种氮化镓基半导体激光器及其制作方法
US20130100978A1 (en) * 2011-10-24 2013-04-25 The Regents Of The University Of California Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region
WO2015190171A1 (ja) * 2014-06-10 2015-12-17 ソニー株式会社 半導体光デバイス及びその製造方法並びに半導体光デバイス組立体
KR102390624B1 (ko) 2015-06-05 2022-04-26 오스텐도 테크놀로지스 인코포레이티드 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체
US10396240B2 (en) * 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
DE112019003671T5 (de) 2018-07-20 2021-04-08 Sony Semiconductor Solutions Corporation Halbleiterlichtemissionselement
JP7422496B2 (ja) * 2019-06-21 2024-01-26 古河機械金属株式会社 構造体、光デバイス、光デバイスの製造方法、構造体の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060126688A1 (en) * 2004-12-14 2006-06-15 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
US20080191223A1 (en) * 2007-02-12 2008-08-14 The Regents Of The University Of California CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR BULK GALLIUM NITRIDE SUBSTRATES

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3206316B2 (ja) * 1994-08-12 2001-09-10 松下電器産業株式会社 半導体レーザ
JP2005072368A (ja) 2003-08-26 2005-03-17 Sony Corp 半導体発光素子、半導体レーザ素子、及び画像表示装置
US7408199B2 (en) * 2004-04-02 2008-08-05 Nichia Corporation Nitride semiconductor laser device and nitride semiconductor device
JP5113446B2 (ja) * 2006-08-11 2013-01-09 三洋電機株式会社 半導体素子およびその製造方法
JP2009016684A (ja) * 2007-07-06 2009-01-22 Nichia Corp 半導体レーザ素子
JP2009021346A (ja) 2007-07-11 2009-01-29 Rohm Co Ltd 半導体発光素子
JP5286723B2 (ja) * 2007-09-14 2013-09-11 国立大学法人京都大学 窒化物半導体レーザ素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060126688A1 (en) * 2004-12-14 2006-06-15 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
US20080191223A1 (en) * 2007-02-12 2008-08-14 The Regents Of The University Of California CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR BULK GALLIUM NITRIDE SUBSTRATES

Also Published As

Publication number Publication date
WO2010095340A1 (ja) 2010-08-26
KR101269315B1 (ko) 2013-05-29
US8548021B2 (en) 2013-10-01
JP4775455B2 (ja) 2011-09-21
KR20110112472A (ko) 2011-10-12
JP2010192594A (ja) 2010-09-02
EP2400604A1 (en) 2011-12-28
TW201034325A (en) 2010-09-16
CN102318152A (zh) 2012-01-11
US20120008660A1 (en) 2012-01-12

Similar Documents

Publication Publication Date Title
CN102318152B (zh) Ⅲ族氮化物半导体激光器及ⅲ族氮化物半导体激光器的制作方法
JP5003527B2 (ja) Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法
US8067257B2 (en) Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
JP5139555B2 (ja) 窒化物半導体レーザ、及びエピタキシャル基板
US8228963B2 (en) Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer
US20110212560A1 (en) Method for fabricating nitride semiconductor light emitting device and method for fabricating epitaxial wafer
JP5699983B2 (ja) 窒化ガリウム系半導体を作製する方法、ｉｉｉ族窒化物半導体デバイスを作製する方法、及びｉｉｉ族窒化物半導体デバイス
CN101944480A (zh) 氮化物半导体芯片及其制造方法以及半导体器件
TW201310705A (zh) 第ｉｉｉ族氮化物半導體元件及第ｉｉｉ族氮化物半導體元件之製造方法
US8748868B2 (en) Nitride semiconductor light emitting device and epitaxial substrate
WO2010131511A1 (ja) Iii族窒化物半導体レーザダイオード、及びiii族窒化物半導体レーザダイオードを作製する方法
CN103748749A (zh) Iii族氮化物半导体发光元件及iii族氮化物半导体发光元件的制作方法
JP2009224602A (ja) 窒化物半導体レーザ、窒化物半導体レーザを作製する方法、及び窒化物半導体レーザのためのエピタキシャルウエハ
JP5351290B2 (ja) 窒化物半導体レーザ、及びエピタキシャル基板
JP5379216B2 (ja) Ｉｉｉ族窒化物半導体レーザ
JP2011188000A (ja) Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法
JP2012109624A (ja) Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130605

Termination date: 20151225

EXPY Termination of patent right or utility model