TW201034325A - Iii nitride semiconductor laser and method for manufacturing iii nitride semiconductor laser - Google Patents
Iii nitride semiconductor laser and method for manufacturing iii nitride semiconductor laser Download PDFInfo
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- TW201034325A TW201034325A TW098146573A TW98146573A TW201034325A TW 201034325 A TW201034325 A TW 201034325A TW 098146573 A TW098146573 A TW 098146573A TW 98146573 A TW98146573 A TW 98146573A TW 201034325 A TW201034325 A TW 201034325A
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- Prior art keywords
- layer
- nitride semiconductor
- semiconductor laser
- axis
- ingan
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 228
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000010287 polarization Effects 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000005684 electric field Effects 0.000 claims abstract description 13
- 230000010355 oscillation Effects 0.000 claims abstract description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 69
- 238000005253 cladding Methods 0.000 claims description 56
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 47
- 230000004888 barrier function Effects 0.000 claims description 39
- 239000000203 mixture Substances 0.000 claims description 33
- -1 nitride nitride Chemical class 0.000 claims description 15
- 238000003776 cleavage reaction Methods 0.000 claims description 14
- 230000007017 scission Effects 0.000 claims description 13
- 229910052797 bismuth Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 6
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 4
- 101000623895 Bos taurus Mucin-15 Proteins 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000003637 steroidlike Effects 0.000 claims 2
- 241000283690 Bos taurus Species 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 277
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 22
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 17
- 239000013078 crystal Substances 0.000 description 16
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 15
- 230000000903 blocking effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 230000009471 action Effects 0.000 description 7
- MGYGFNQQGAQEON-UHFFFAOYSA-N 4-tolyl isocyanate Chemical compound CC1=CC=C(N=C=O)C=C1 MGYGFNQQGAQEON-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 241000219112 Cucumis Species 0.000 description 4
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001748 luminescence spectrum Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- KSOCVFUBQIXVDC-FMQUCBEESA-N p-azophenyltrimethylammonium Chemical compound C1=CC([N+](C)(C)C)=CC=C1\N=N\C1=CC=C([N+](C)(C)C)C=C1 KSOCVFUBQIXVDC-FMQUCBEESA-N 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- IZSHZLKNFQAAKX-UHFFFAOYSA-N 5-cyclopenta-2,4-dien-1-ylcyclopenta-1,3-diene Chemical group C1=CC=CC1C1C=CC=C1 IZSHZLKNFQAAKX-UHFFFAOYSA-N 0.000 description 1
- 101100328518 Caenorhabditis elegans cnt-1 gene Proteins 0.000 description 1
- 241001529936 Murinae Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- SWQJXJOGLNCZEY-BJUDXGSMSA-N helium-3 atom Chemical compound [3He] SWQJXJOGLNCZEY-BJUDXGSMSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009034004A JP4775455B2 (ja) | 2009-02-17 | 2009-02-17 | Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201034325A true TW201034325A (en) | 2010-09-16 |
Family
ID=42633632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098146573A TW201034325A (en) | 2009-02-17 | 2009-12-31 | Iii nitride semiconductor laser and method for manufacturing iii nitride semiconductor laser |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8548021B2 (enExample) |
| EP (1) | EP2400604A1 (enExample) |
| JP (1) | JP4775455B2 (enExample) |
| KR (1) | KR101269315B1 (enExample) |
| CN (1) | CN102318152B (enExample) |
| TW (1) | TW201034325A (enExample) |
| WO (1) | WO2010095340A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7933303B2 (en) | 2009-06-17 | 2011-04-26 | Sumitomo Electric Industries, Ltd. | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device |
| JP5206699B2 (ja) | 2010-01-18 | 2013-06-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
| JP2011018784A (ja) * | 2009-07-09 | 2011-01-27 | Sony Corp | 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置 |
| JP2011023537A (ja) * | 2009-07-15 | 2011-02-03 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法 |
| TWI560963B (en) * | 2010-03-04 | 2016-12-01 | Univ California | Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/- 15 degrees in the c-direction |
| US8189639B2 (en) * | 2010-05-28 | 2012-05-29 | Corning Incorporated | GaN-based laser diodes with misfit dislocations displaced from the active region |
| JP5139555B2 (ja) * | 2011-04-22 | 2013-02-06 | 住友電気工業株式会社 | 窒化物半導体レーザ、及びエピタキシャル基板 |
| CN102227046A (zh) * | 2011-05-25 | 2011-10-26 | 北京化工大学 | 一种氮化镓基半导体激光器及其制作方法 |
| US20130100978A1 (en) * | 2011-10-24 | 2013-04-25 | The Regents Of The University Of California | Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region |
| WO2015190171A1 (ja) * | 2014-06-10 | 2015-12-17 | ソニー株式会社 | 半導体光デバイス及びその製造方法並びに半導体光デバイス組立体 |
| KR102390624B1 (ko) | 2015-06-05 | 2022-04-26 | 오스텐도 테크놀로지스 인코포레이티드 | 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체 |
| US10396240B2 (en) * | 2015-10-08 | 2019-08-27 | Ostendo Technologies, Inc. | III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same |
| DE112019003671T5 (de) | 2018-07-20 | 2021-04-08 | Sony Semiconductor Solutions Corporation | Halbleiterlichtemissionselement |
| JP7422496B2 (ja) * | 2019-06-21 | 2024-01-26 | 古河機械金属株式会社 | 構造体、光デバイス、光デバイスの製造方法、構造体の製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3206316B2 (ja) * | 1994-08-12 | 2001-09-10 | 松下電器産業株式会社 | 半導体レーザ |
| JP2005072368A (ja) | 2003-08-26 | 2005-03-17 | Sony Corp | 半導体発光素子、半導体レーザ素子、及び画像表示装置 |
| US7408199B2 (en) * | 2004-04-02 | 2008-08-05 | Nichia Corporation | Nitride semiconductor laser device and nitride semiconductor device |
| US7751455B2 (en) * | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
| JP5113446B2 (ja) * | 2006-08-11 | 2013-01-09 | 三洋電機株式会社 | 半導体素子およびその製造方法 |
| WO2008100504A1 (en) | 2007-02-12 | 2008-08-21 | The Regents Of The University Of California | Cleaved facet (ga,al,in)n edge-emitting laser diodes grown on semipolar {11-2n} bulk gallium nitride substrates |
| JP2009016684A (ja) * | 2007-07-06 | 2009-01-22 | Nichia Corp | 半導体レーザ素子 |
| JP2009021346A (ja) | 2007-07-11 | 2009-01-29 | Rohm Co Ltd | 半導体発光素子 |
| JP5286723B2 (ja) * | 2007-09-14 | 2013-09-11 | 国立大学法人京都大学 | 窒化物半導体レーザ素子 |
-
2009
- 2009-02-17 JP JP2009034004A patent/JP4775455B2/ja not_active Expired - Fee Related
- 2009-12-25 CN CN2009801569816A patent/CN102318152B/zh not_active Expired - Fee Related
- 2009-12-25 WO PCT/JP2009/071661 patent/WO2010095340A1/ja not_active Ceased
- 2009-12-25 KR KR1020117020627A patent/KR101269315B1/ko not_active Expired - Fee Related
- 2009-12-25 EP EP09840443A patent/EP2400604A1/en not_active Withdrawn
- 2009-12-31 TW TW098146573A patent/TW201034325A/zh unknown
-
2011
- 2011-08-17 US US13/211,858 patent/US8548021B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010095340A1 (ja) | 2010-08-26 |
| KR101269315B1 (ko) | 2013-05-29 |
| US8548021B2 (en) | 2013-10-01 |
| JP4775455B2 (ja) | 2011-09-21 |
| KR20110112472A (ko) | 2011-10-12 |
| JP2010192594A (ja) | 2010-09-02 |
| EP2400604A1 (en) | 2011-12-28 |
| CN102318152A (zh) | 2012-01-11 |
| US20120008660A1 (en) | 2012-01-12 |
| CN102318152B (zh) | 2013-06-05 |
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