JP4770058B2 - 発光素子及び装置 - Google Patents

発光素子及び装置 Download PDF

Info

Publication number
JP4770058B2
JP4770058B2 JP2001148382A JP2001148382A JP4770058B2 JP 4770058 B2 JP4770058 B2 JP 4770058B2 JP 2001148382 A JP2001148382 A JP 2001148382A JP 2001148382 A JP2001148382 A JP 2001148382A JP 4770058 B2 JP4770058 B2 JP 4770058B2
Authority
JP
Japan
Prior art keywords
layer
light
nitride semiconductor
photoluminescence
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001148382A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002261334A (ja
JP2002261334A5 (https=
Inventor
宏典 高木
公二 谷沢
宏充 丸居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2001148382A priority Critical patent/JP4770058B2/ja
Publication of JP2002261334A publication Critical patent/JP2002261334A/ja
Publication of JP2002261334A5 publication Critical patent/JP2002261334A5/ja
Application granted granted Critical
Publication of JP4770058B2 publication Critical patent/JP4770058B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Led Devices (AREA)
JP2001148382A 2000-05-17 2001-05-17 発光素子及び装置 Expired - Lifetime JP4770058B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001148382A JP4770058B2 (ja) 2000-05-17 2001-05-17 発光素子及び装置

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000145084 2000-05-17
JP2000145084 2000-05-17
JP2000393194 2000-12-25
JP2000-145084 2000-12-25
JP2000393194 2000-12-25
JP2000-393194 2000-12-25
JP2001148382A JP4770058B2 (ja) 2000-05-17 2001-05-17 発光素子及び装置

Publications (3)

Publication Number Publication Date
JP2002261334A JP2002261334A (ja) 2002-09-13
JP2002261334A5 JP2002261334A5 (https=) 2008-07-03
JP4770058B2 true JP4770058B2 (ja) 2011-09-07

Family

ID=27343400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001148382A Expired - Lifetime JP4770058B2 (ja) 2000-05-17 2001-05-17 発光素子及び装置

Country Status (1)

Country Link
JP (1) JP4770058B2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI241728B (en) 2004-09-01 2005-10-11 Epistar Corp Semiconductor light-emitting device and production method thereof
JP2004229273A (ja) * 2003-09-16 2004-08-12 Global Com:Kk 照明光通信方式
EP1863203A1 (en) 2002-10-24 2007-12-05 Nakagawa Laboratories, Inc. Illumination light communication device
JP4507636B2 (ja) * 2003-03-27 2010-07-21 日亜化学工業株式会社 半導体発光素子
JP4057468B2 (ja) 2003-06-03 2008-03-05 シャープ株式会社 光伝送機構を備えた照明装置
JP4279698B2 (ja) 2004-01-30 2009-06-17 シャープ株式会社 Ｌｅｄ素子の駆動方法及び駆動装置、照明装置並びに表示装置
JP2005317823A (ja) * 2004-04-30 2005-11-10 Nitride Semiconductor Co Ltd 窒化ガリウム系発光装置
JP2006108297A (ja) * 2004-10-04 2006-04-20 ▲さん▼圓光電股▲ふん▼有限公司 窒化ガリウム系発光ダイオードの低電気抵抗ｎ型コンタクト層の構造
KR100847847B1 (ko) * 2007-01-22 2008-07-23 삼성전기주식회사 백색 발광소자 및 그 제조방법
DE102007058952A1 (de) * 2007-09-24 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2009099893A (ja) 2007-10-19 2009-05-07 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP4684278B2 (ja) * 2007-11-01 2011-05-18 シャープ株式会社 光伝送機構を備えた照明装置
TWI449221B (zh) 2009-01-16 2014-08-11 億光電子工業股份有限公司 發光二極體封裝結構及其製造方法
CN115172544A (zh) * 2022-06-22 2022-10-11 广东中民工业技术创新研究院有限公司 一种基于全氮化物的外延芯片结构和发光器件
CN120076507A (zh) * 2024-08-20 2025-05-30 纳微朗科技(深圳)有限公司 照明结构及照明装置
CN119923041A (zh) * 2024-08-20 2025-05-02 纳微朗科技(深圳)有限公司 发光二极管芯片组、显示背光模组及照明模组

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163535A (ja) * 1996-11-27 1998-06-19 Kasei Optonix Co Ltd 白色発光素子
JP3559446B2 (ja) * 1998-03-23 2004-09-02 株式会社東芝 半導体発光素子および半導体発光装置

Also Published As

Publication number Publication date
JP2002261334A (ja) 2002-09-13

Similar Documents

Publication Publication Date Title
KR100574738B1 (ko) 질화물 반도체 소자
EP1385215B1 (en) Nitride semiconductor device comprising bonded substrate and fabrication method of the same
JP4770058B2 (ja) 発光素子及び装置
JP3772801B2 (ja) 発光ダイオード
JP2001352101A (ja) 発光装置
KR20090069146A (ko) 발광 다이오드 패키지
JP3511993B2 (ja) 発光装置
JP2001028458A (ja) 発光素子
JP2000133883A (ja) 窒化物半導体素子
US20230093367A1 (en) Light emitting device and light emitting module having the same
JP3470622B2 (ja) 窒化物半導体発光素子
Yamada et al. A methodological study of the best solution for generating white light using nitride-based light-emitting diodes
TWI395343B (zh) 半導體及半導體之製作方法
US20040090779A1 (en) Light mixing led and manufacturing method thereof
JP4501194B2 (ja) 窒化物半導体発光素子
JP2001298215A (ja) 発光素子
KR100925064B1 (ko) 백색 발광소자
KR20110117415A (ko) 반도체 발광소자, 반도체 발광소자 패키지 및 반도체 발광소자의 제조방법
JP4622466B2 (ja) 窒化物半導体素子
JP2003037291A (ja) 発光素子
JP2001237456A (ja) 発光素子
JP5060823B2 (ja) 半導体発光素子
KR101034211B1 (ko) 수직형 발광소자
JP4458870B2 (ja) 蛍光発光装置、蛍光発光素子、および蛍光体
KR102399381B1 (ko) 발광소자

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080516

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080516

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101207

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101214

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110524

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110606

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140701

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4770058

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140701

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term