JP4768710B2 - バーンイン中の温度のばらつきを低減するためのシステムおよび方法 - Google Patents

バーンイン中の温度のばらつきを低減するためのシステムおよび方法 Download PDF

Info

Publication number
JP4768710B2
JP4768710B2 JP2007501961A JP2007501961A JP4768710B2 JP 4768710 B2 JP4768710 B2 JP 4768710B2 JP 2007501961 A JP2007501961 A JP 2007501961A JP 2007501961 A JP2007501961 A JP 2007501961A JP 4768710 B2 JP4768710 B2 JP 4768710B2
Authority
JP
Japan
Prior art keywords
integrated circuit
under test
body bias
ambient temperature
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007501961A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007526486A5 (enExample
JP2007526486A (ja
Inventor
シェン、エリック、チエン−リ
ホフマン、デイビット、エイチ．
ニーヴン、ジョン、ローレンス
Original Assignee
インテレクチュアル ベンチャー ファンディング エルエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by インテレクチュアル ベンチャー ファンディング エルエルシー filed Critical インテレクチュアル ベンチャー ファンディング エルエルシー
Publication of JP2007526486A publication Critical patent/JP2007526486A/ja
Publication of JP2007526486A5 publication Critical patent/JP2007526486A5/ja
Application granted granted Critical
Publication of JP4768710B2 publication Critical patent/JP4768710B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/42—Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2007501961A 2004-03-01 2005-03-01 バーンイン中の温度のばらつきを低減するためのシステムおよび方法 Expired - Fee Related JP4768710B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/791,099 2004-03-01
US10/791,099 US7248988B2 (en) 2004-03-01 2004-03-01 System and method for reducing temperature variation during burn in
PCT/US2005/006830 WO2005085884A2 (en) 2004-03-01 2005-03-01 System and method for reducing temperature variation during burn in

Publications (3)

Publication Number Publication Date
JP2007526486A JP2007526486A (ja) 2007-09-13
JP2007526486A5 JP2007526486A5 (enExample) 2008-04-17
JP4768710B2 true JP4768710B2 (ja) 2011-09-07

Family

ID=34887569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007501961A Expired - Fee Related JP4768710B2 (ja) 2004-03-01 2005-03-01 バーンイン中の温度のばらつきを低減するためのシステムおよび方法

Country Status (4)

Country Link
US (4) US7248988B2 (enExample)
JP (1) JP4768710B2 (enExample)
CN (1) CN1926439B (enExample)
WO (1) WO2005085884A2 (enExample)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974252B2 (en) * 2003-03-11 2005-12-13 Intel Corporation Failsafe mechanism for preventing an integrated circuit from overheating
US7248988B2 (en) * 2004-03-01 2007-07-24 Transmeta Corporation System and method for reducing temperature variation during burn in
US6897671B1 (en) * 2004-03-01 2005-05-24 Transmeta Corporation System and method for reducing heat dissipation during burn-in
US6900650B1 (en) * 2004-03-01 2005-05-31 Transmeta Corporation System and method for controlling temperature during burn-in
US7376849B2 (en) * 2004-06-30 2008-05-20 Intel Corporation Method, apparatus and system of adjusting one or more performance-related parameters of a processor
US7763074B2 (en) 2004-10-20 2010-07-27 The Board Of Trustees Of The Leland Stanford Junior University Systems and methods for posterior dynamic stabilization of the spine
US8317864B2 (en) 2004-10-20 2012-11-27 The Board Of Trustees Of The Leland Stanford Junior University Systems and methods for posterior dynamic stabilization of the spine
US9119680B2 (en) 2004-10-20 2015-09-01 Vertiflex, Inc. Interspinous spacer
US8277488B2 (en) 2004-10-20 2012-10-02 Vertiflex, Inc. Interspinous spacer
US8409282B2 (en) 2004-10-20 2013-04-02 Vertiflex, Inc. Systems and methods for posterior dynamic stabilization of the spine
US8128662B2 (en) 2004-10-20 2012-03-06 Vertiflex, Inc. Minimally invasive tooling for delivery of interspinous spacer
US9023084B2 (en) 2004-10-20 2015-05-05 The Board Of Trustees Of The Leland Stanford Junior University Systems and methods for stabilizing the motion or adjusting the position of the spine
US8167944B2 (en) 2004-10-20 2012-05-01 The Board Of Trustees Of The Leland Stanford Junior University Systems and methods for posterior dynamic stabilization of the spine
US8012207B2 (en) 2004-10-20 2011-09-06 Vertiflex, Inc. Systems and methods for posterior dynamic stabilization of the spine
US8425559B2 (en) 2004-10-20 2013-04-23 Vertiflex, Inc. Systems and methods for posterior dynamic stabilization of the spine
US8273108B2 (en) 2004-10-20 2012-09-25 Vertiflex, Inc. Interspinous spacer
US8613747B2 (en) 2004-10-20 2013-12-24 Vertiflex, Inc. Spacer insertion instrument
US8123807B2 (en) 2004-10-20 2012-02-28 Vertiflex, Inc. Systems and methods for posterior dynamic stabilization of the spine
US9161783B2 (en) 2004-10-20 2015-10-20 Vertiflex, Inc. Interspinous spacer
US8152837B2 (en) 2004-10-20 2012-04-10 The Board Of Trustees Of The Leland Stanford Junior University Systems and methods for posterior dynamic stabilization of the spine
US8123782B2 (en) 2004-10-20 2012-02-28 Vertiflex, Inc. Interspinous spacer
EP2219538B1 (en) 2004-12-06 2022-07-06 Vertiflex, Inc. Spacer insertion instrument
US7141998B1 (en) * 2005-05-19 2006-11-28 International Business Machines Corporation Method and apparatus for burn-in optimization
US7333904B2 (en) * 2005-08-26 2008-02-19 Delphi Technologies, Inc. Method of determining FET junction temperature
EP1934871A4 (en) * 2005-10-11 2012-11-07 Exar Corp PREDICTIVE THERMAL MANAGEMENT BY MODEL
US8845726B2 (en) 2006-10-18 2014-09-30 Vertiflex, Inc. Dilator
US7468919B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Biasing non-volatile storage based on selected word line
US7525843B2 (en) * 2006-12-30 2009-04-28 Sandisk Corporation Non-volatile storage with adaptive body bias
US7554853B2 (en) * 2006-12-30 2009-06-30 Sandisk Corporation Non-volatile storage with bias based on selective word line
US7468920B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7583535B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Biasing non-volatile storage to compensate for temperature variations
US7583539B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Non-volatile storage with bias for temperature compensation
WO2008130564A1 (en) 2007-04-16 2008-10-30 Vertiflex Inc. Interspinous spacer
US7606072B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop
US7606071B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Compensating source voltage drop in non-volatile storage
EP2244670B1 (en) 2008-01-15 2017-09-13 Vertiflex, Inc. Interspinous spacer
EP2318817A4 (en) * 2008-07-25 2015-09-23 Delphi Tech Inc CURRENT AND TEMPERATURE DETECTION OF STANDARD FIELD EFFECT TRANSISTORS
US8087823B2 (en) * 2008-08-18 2012-01-03 International Business Machines Corporation Method for monitoring thermal control
WO2011084477A2 (en) 2009-12-15 2011-07-14 Vertifex, Inc. Spinal spacer for cervical and other vertebra, and associated systems and methods
US9709625B2 (en) * 2010-11-19 2017-07-18 International Business Machines Corporation Measuring power consumption in an integrated circuit
JP2012138020A (ja) * 2010-12-27 2012-07-19 Panasonic Corp マルチチップシステム、通信機器、映像音声装置および自動車
US10049957B2 (en) 2011-03-03 2018-08-14 International Business Machines Corporation On-chip control of thermal cycling
US8814425B1 (en) * 2011-09-30 2014-08-26 Emc Corporation Power measurement transducer
US8814424B1 (en) * 2011-09-30 2014-08-26 Emc Corporation Power measurement transducer
TWI483104B (zh) * 2011-12-20 2015-05-01 Hon Hai Prec Ind Co Ltd 電子裝置測試系統及方法
US8909383B2 (en) 2011-12-22 2014-12-09 International Business Machines Corporation Proactive cooling of chips using workload information and controls
KR101975409B1 (ko) 2012-07-26 2019-05-08 삼성전자주식회사 시스템 온 칩 및 그것의 온도 제어 방법
US9675303B2 (en) 2013-03-15 2017-06-13 Vertiflex, Inc. Visualization systems, instruments and methods of using the same in spinal decompression procedures
EP3139848A4 (en) 2014-05-07 2018-06-13 Vertiflex, Inc. Spinal nerve decompression systems, dilation systems, and methods of using the same
US10346239B1 (en) * 2016-06-27 2019-07-09 Amazon Technologies, Inc. Predictive failure of hardware components
CN106501699B (zh) * 2016-10-20 2019-02-19 北京工业大学 一种饱和状态下双极晶体管结温的实时测量方法
JP2018080920A (ja) * 2016-11-14 2018-05-24 セイコーエプソン株式会社 温度測定装置、検査装置、および制御方法
US10101382B2 (en) 2016-12-30 2018-10-16 Texas Instruments Incorporated Systems and methods for dynamic Rdson measurement
CN109738779B (zh) * 2019-01-30 2021-05-18 上海联影医疗科技股份有限公司 半导体结温计算方法、装置、计算机设备和存储介质
CN111398780A (zh) * 2020-03-20 2020-07-10 北京航空航天大学 一种基于少量测点数据的电路板温度分布快速测试方法
WO2021226408A1 (en) * 2020-05-08 2021-11-11 Flir Commercial Systems, Inc. Burn-in mitigation and associated imaging systems and methods
CN111722086B (zh) * 2020-06-29 2023-01-24 中国人民解放军国防科技大学 一种高功率处理器芯片老化测试的方法
CN112857595B (zh) * 2021-01-15 2022-12-27 苏州浪潮智能科技有限公司 一种老化室温度检测方法、系统及介质
DE102021120345A1 (de) 2021-07-02 2023-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur prüfung einer integrierten schaltung und eines testsystems
CN115308563B (zh) * 2021-07-02 2025-08-12 台积电(南京)有限公司 测试集成电路的方法和测试系统
CN113742153B (zh) * 2021-09-15 2023-12-26 北京字节跳动网络技术有限公司 设备测试方法、装置、可读介质及电子设备
CN114137385A (zh) * 2021-10-19 2022-03-04 深圳市紫光同创电子有限公司 芯片老化测试设备及方法
CN113777474B (zh) * 2021-11-10 2022-03-15 北京京瀚禹电子工程技术有限公司 用于集成电路耐温老化测试的测试方法及系统
WO2023158581A1 (en) 2022-02-15 2023-08-24 Boston Scientific Neuromodulation Corporation Interspinous spacer and systems utilizing the interspinous spacer
US11838014B1 (en) * 2022-07-28 2023-12-05 Micron Technology, Inc. Semiconductor device having voltage generator generating well potential
US12433646B2 (en) 2023-02-21 2025-10-07 Boston Scientific Neuromodulation Corporation Interspinous spacer with actuator locking arrangements and methods and systems
US12390340B2 (en) 2023-03-15 2025-08-19 Boston Scientific Neuromodulation Corporation Interspinous spacer with a range of deployment positions and methods and systems
CN117148124B (zh) * 2023-11-01 2024-02-20 杭州高坤电子科技有限公司 一种集成电路热阻测试方法、系统及存储介质

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000088915A (ja) * 1998-09-14 2000-03-31 Sony Corp 半導体の試験方法及び装置
JP2000206174A (ja) * 1999-01-14 2000-07-28 Matsushita Electric Ind Co Ltd 半導体装置の検査方法

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244267A (en) 1963-08-01 1966-04-05 Merck & Co Inc Convergence apparatus
US3366220A (en) 1965-11-23 1968-01-30 Gen Foods Corp Method and apparatus for single filing
JPS55107255A (en) 1979-02-12 1980-08-16 Mitsubishi Electric Corp Substrate potential generating circuit device
US4265356A (en) 1979-08-20 1981-05-05 The Lodge & Shipley Company Apparatus for combining articles from plural lanes into a single lane
CH631108A5 (fr) 1979-10-09 1982-07-30 Motosacoche Sa Installation de production de recipients par etirage-soufflage de preformes en matiere plastique.
US4313720A (en) 1980-03-03 1982-02-02 Emhart Industries, Inc. Parison transfer means
US4434583A (en) 1981-07-06 1984-03-06 Burgess Jr Warren C Automatically adjustable workpiece guide and feed mechanism
JPS6020394A (ja) 1983-07-14 1985-02-01 Ricoh Co Ltd 電源切換回路
JPS6159688A (ja) 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
US4838664A (en) 1986-07-10 1989-06-13 Brent Graham Diagnostic overlay
CA1340569C (en) 1987-05-05 1999-06-01 Sungho Jin Superconductive body having improved properties, and apparatus and systems comprising such a body
US4855672A (en) 1987-05-18 1989-08-08 Shreeve Robert W Method and process for testing the reliability of integrated circuit (IC) chips and novel IC circuitry for accomplishing same
US4938636A (en) 1988-11-14 1990-07-03 Aidlin Automation Corp. Method and apparatus for feeding container bodies
JPH07105160B2 (ja) 1989-05-20 1995-11-13 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
US5467300A (en) 1990-06-14 1995-11-14 Creative Integrated Systems, Inc. Grounded memory core for Roms, Eproms, and EEpproms having an address decoder, and sense amplifier
US5309090A (en) * 1990-09-06 1994-05-03 Lipp Robert J Apparatus for heating and controlling temperature in an integrated circuit chip
US5161665A (en) 1990-11-13 1992-11-10 Riverwood International Corporation Lane merger apparatus
FR2675481B1 (fr) 1991-04-16 1993-08-20 Sidel Sa Dispositif de convoyage de preformes agence pour eliminer des preformes emboitees les unes dans les autres.
CA2073916A1 (en) 1991-07-19 1993-01-20 Tatsuya Hashinaga Burn-in apparatus and method
EP0836194B1 (en) 1992-03-30 2000-05-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5461338A (en) 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
US5491432A (en) 1992-08-07 1996-02-13 Lsi Logic Corporation CMOS Differential driver circuit for high offset ground
US5430404A (en) 1992-10-28 1995-07-04 Integrated Device Technology, Inc. Output driver circuits with enhanced supply-line bounce control and improved VOH characteristic
JP3307453B2 (ja) 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路
KR0169157B1 (ko) 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
JP3311133B2 (ja) 1994-02-16 2002-08-05 株式会社東芝 出力回路
US5501552A (en) 1994-04-29 1996-03-26 Goldco Industries, Inc. Conveying system for unstable articles having a neck ring
US5559368A (en) 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US6577148B1 (en) 1994-08-31 2003-06-10 Motorola, Inc. Apparatus, method, and wafer used for testing integrated circuits formed on a product wafer
JP2718375B2 (ja) 1994-09-30 1998-02-25 日本電気株式会社 チャージポンプ回路
BE1008808A3 (nl) * 1994-10-19 1996-08-06 Imec Inter Uni Micro Electr Inrichting en werkwijze voor het evalueren van de thermische weerstand van een halfgeleider-component.
US5834038A (en) 1994-12-14 1998-11-10 Nissei Asb Machine Co., Ltd. Blow molding apparatus
US5689209A (en) 1994-12-30 1997-11-18 Siliconix Incorporated Low-side bidirectional battery disconnect switch
JP3175521B2 (ja) 1995-01-27 2001-06-11 日本電気株式会社 シリコン・オン・インシュレータ半導体装置及びバイアス電圧発生回路
US5607706A (en) 1995-04-05 1997-03-04 Husky Injection Molding Systems Ltd. Preconditioning preforms on a reheat blow molding system
US5798653A (en) 1995-04-20 1998-08-25 Sun Microsystems, Inc. Burn-in system for reliable integrated circuit manufacturing
US5944165A (en) 1995-05-02 1999-08-31 Lever Brothers Company Lane distribution apparatus
JP3641511B2 (ja) 1995-06-16 2005-04-20 株式会社ルネサステクノロジ 半導体装置
US6035407A (en) 1995-08-14 2000-03-07 Compaq Computer Corporation Accomodating components
US5713666A (en) * 1995-08-30 1998-02-03 Seelink Technology Thermal testing apparatus and method
KR0179820B1 (ko) 1996-02-01 1999-04-15 문정환 반도체 메모리의 번인 감지 회로
US5772000A (en) 1996-03-28 1998-06-30 Serres; Paul J. Hop vine transfer system
US5689144A (en) 1996-05-15 1997-11-18 Siliconix Incorporated Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance
KR100189752B1 (ko) 1996-06-01 1999-06-01 구본준 독립적인 웰 바이어스 전압을 가진 전압 펌프회로
US6476627B1 (en) 1996-10-21 2002-11-05 Delta Design, Inc. Method and apparatus for temperature control of a device during testing
US6489793B2 (en) 1996-10-21 2002-12-03 Delta Design, Inc. Temperature control of electronic devices using power following feedback
US6037792A (en) 1996-12-21 2000-03-14 Stmicroelectronics, Inc. Burn-in stress test mode
US5841299A (en) 1997-02-06 1998-11-24 Intel Corporation Method and apparatus for implementing an adiabatic logic family
JP4046383B2 (ja) 1997-04-01 2008-02-13 株式会社ルネサステクノロジ 半導体集積回路装置
US5929695A (en) 1997-06-02 1999-07-27 Stmicroelectronics, Inc. Integrated circuit having selective bias of transistors for low voltage and low standby current and related methods
US6218892B1 (en) 1997-06-20 2001-04-17 Intel Corporation Differential circuits employing forward body bias
US6100751A (en) 1997-06-20 2000-08-08 Intel Corporation Forward body biased field effect transistor providing decoupling capacitance
US6593799B2 (en) 1997-06-20 2003-07-15 Intel Corporation Circuit including forward body bias from supply voltage and ground nodes
US5909618A (en) 1997-07-08 1999-06-01 Micron Technology, Inc. Method of making memory cell with vertical transistor and buried word and body lines
US5986476A (en) 1997-08-08 1999-11-16 Intel Corporation Method and apparatus for implementing a dynamic adiabatic logic family
JPH1183938A (ja) 1997-09-08 1999-03-26 Mitsubishi Electric Corp 半導体装置用テストボードおよびそれを用いた半導体装置の評価試験方法
TW345685B (en) 1997-11-22 1998-11-21 United Microelectronics Corp Semiconductor device with wafer burn-in and method therefor
US6149299A (en) * 1997-12-11 2000-11-21 National Semiconductor Corporation Direct temperature sensing of a semiconductor device semiconductor device
JP3501644B2 (ja) * 1998-02-02 2004-03-02 日本電気株式会社 半導体パッケージの熱抵抗計算方法および記録媒体および熱抵抗計算装置
US6137301A (en) 1998-05-11 2000-10-24 Vanguard International Semiconductor Company EPROM used as a voltage monitor for semiconductor burn-in
US6252614B1 (en) * 1998-07-20 2001-06-26 Toshiba American Information Systems, Inc. Software architecture which maintains system performance while pipelining data to an MFP and uses shared DLL
US6203191B1 (en) * 1998-10-28 2001-03-20 Speculative Incorporated Method of junction temperature determination and control utilizing heat flow
US6141193A (en) * 1999-03-15 2000-10-31 National Semiconductor Corporation Shunt regulator with shutdown protection to prevent excessive power dissipation
US20020140496A1 (en) 2000-02-16 2002-10-03 Ali Keshavarzi Forward body biased transistors with reduced temperature
US6620352B1 (en) 2000-07-27 2003-09-16 Ball Corporation Automated material distribution control for stretch blow molded articles
US20020110612A1 (en) 2001-02-09 2002-08-15 Schad Robert D. System and apparatus for injection molding articles with reduced crystallization
US6667548B2 (en) * 2001-04-06 2003-12-23 Intel Corporation Diamond heat spreading and cooling technique for integrated circuits
US6967522B2 (en) * 2001-04-17 2005-11-22 Massachusetts Institute Of Technology Adaptive power supply and substrate control for ultra low power digital processors using triple well control
US6980016B2 (en) * 2001-07-02 2005-12-27 Intel Corporation Integrated circuit burn-in systems
US6455336B1 (en) 2001-08-27 2002-09-24 International Business Machines Corporation Power reduction method and design technique for burn-in
US6794620B1 (en) 2001-11-07 2004-09-21 Advanced Micro Devices, Inc. Feedforward temperature control of device under test
JP3874173B2 (ja) 2002-01-28 2007-01-31 株式会社吉野工業所 プリフォーム搬送装置
US6957163B2 (en) * 2002-04-24 2005-10-18 Yoshiyuki Ando Integrated circuits having post-silicon adjustment control
JP4401621B2 (ja) 2002-05-07 2010-01-20 株式会社日立製作所 半導体集積回路装置
US6786639B2 (en) * 2002-08-30 2004-09-07 International Business Machines Corporation Device for sensing temperature of an electronic chip
US6853944B2 (en) * 2002-10-29 2005-02-08 Koninklijke Philips Electronics N.V. Junction temperatures measurements in semiconductor chip package technology
DE10255665B4 (de) * 2002-11-28 2008-05-08 Qimonda Ag Schaltung und Verfahren zur Bestimmung wenigstens eines Spannungs-, Strom- und/oder Leistungswerts einer integrierten Schaltung
US6989684B2 (en) * 2002-12-04 2006-01-24 Hewlett-Packard Development Company, L.P. System for and method of assessing chip acceptability and increasing yield
US7275012B2 (en) * 2002-12-30 2007-09-25 Intel Corporation Automated method and apparatus for processor thermal validation
US7205758B1 (en) * 2004-02-02 2007-04-17 Transmeta Corporation Systems and methods for adjusting threshold voltage
US20040150417A1 (en) * 2003-01-30 2004-08-05 Paulos John James Integrated circuit with junction temperature sensing diode
US7141953B2 (en) * 2003-09-04 2006-11-28 Intel Corporation Methods and apparatus for optimal voltage and frequency control of thermally limited systems
US6956437B2 (en) * 2003-12-23 2005-10-18 Agere Systems Inc. Metal-oxide-semiconductor device having integrated bias circuit
US7248988B2 (en) * 2004-03-01 2007-07-24 Transmeta Corporation System and method for reducing temperature variation during burn in
US6897671B1 (en) 2004-03-01 2005-05-24 Transmeta Corporation System and method for reducing heat dissipation during burn-in
US6900650B1 (en) 2004-03-01 2005-05-31 Transmeta Corporation System and method for controlling temperature during burn-in
EP1751511B1 (en) * 2004-06-04 2016-03-09 Infineon Technologies AG Pn-junction temperature sensing apparatus
US7376849B2 (en) 2004-06-30 2008-05-20 Intel Corporation Method, apparatus and system of adjusting one or more performance-related parameters of a processor
TWI355484B (en) * 2007-12-14 2012-01-01 Ind Tech Res Inst Apparatus and method for measuring character and c

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000088915A (ja) * 1998-09-14 2000-03-31 Sony Corp 半導体の試験方法及び装置
JP2000206174A (ja) * 1999-01-14 2000-07-28 Matsushita Electric Ind Co Ltd 半導体装置の検査方法

Also Published As

Publication number Publication date
US7565259B2 (en) 2009-07-21
US20090316750A1 (en) 2009-12-24
US7248988B2 (en) 2007-07-24
WO2005085884A3 (en) 2006-08-03
WO2005085884A2 (en) 2005-09-15
CN1926439B (zh) 2010-06-09
WO2005085884A9 (en) 2006-02-09
US20090289654A1 (en) 2009-11-26
US20070271061A1 (en) 2007-11-22
US20050192773A1 (en) 2005-09-01
JP2007526486A (ja) 2007-09-13
CN1926439A (zh) 2007-03-07
US8843344B2 (en) 2014-09-23

Similar Documents

Publication Publication Date Title
JP4768710B2 (ja) バーンイン中の温度のばらつきを低減するためのシステムおよび方法
CN1997904B (zh) 用于调节老化期间的温度的系统和方法
CN100585421C (zh) 定制老化多内核集成电路芯片的内核的系统和方法
US6757857B2 (en) Alternating current built in self test (AC BIST) with variable data receiver voltage reference for performing high-speed AC memory subsystem self-test
US6489912B2 (en) Analog-to-digital converter for monitoring VDDQ and dynamically updating programmable Vref when using high-frequency receiver and driver circuits for commercial memory
US20120224602A1 (en) Calibration of an on-die thermal sensor
US7595652B2 (en) System and method for reducing heat dissipation during burn-in
CN100337385C (zh) 集成电路芯片及其测试方法
US7170310B2 (en) System and method using locally heated island for integrated circuit testing
JP5528670B2 (ja) バーンイン試験に関するシステムおよび方法
HK1096458A (en) System and method for reducing temperature variation during burn in
US6989684B2 (en) System for and method of assessing chip acceptability and increasing yield
EP4222461A1 (en) Multi-sensing ptat for multiple-location temperature sensing
HK1096729A (en) System and method pertaining to burn-in testing
Hamilton Thermal aspects of burn-in of high power semiconductor devices
HK1101205A (en) System and method for regulating temperature during burn-in
KR102881474B1 (ko) 고속 인터페이스의 테스트가 가능한 반도체 테스트 장치
CN215340245U (zh) 用于测试头的短路检测的装置
Zandrahimi et al. An industrial case study of low cost adaptive voltage scaling using delay test patterns
JP2006023081A (ja) バーンイン装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080228

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080228

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20100805

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110428

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110524

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110616

R150 Certificate of patent or registration of utility model

Ref document number: 4768710

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140624

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees