JP4761681B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- JP4761681B2 JP4761681B2 JP2001294269A JP2001294269A JP4761681B2 JP 4761681 B2 JP4761681 B2 JP 4761681B2 JP 2001294269 A JP2001294269 A JP 2001294269A JP 2001294269 A JP2001294269 A JP 2001294269A JP 4761681 B2 JP4761681 B2 JP 4761681B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- liquid crystal
- display device
- crystal display
- signal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 100
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 238000003860 storage Methods 0.000 claims description 27
- 238000005070 sampling Methods 0.000 claims description 10
- 239000010408 film Substances 0.000 description 122
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- 239000000758 substrate Substances 0.000 description 44
- 239000012535 impurity Substances 0.000 description 39
- 230000008569 process Effects 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 239000011159 matrix material Substances 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 238000001994 activation Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
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- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
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- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102100034238 Linker for activation of T-cells family member 2 Human genes 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 108091006238 SLC7A8 Proteins 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- -1 and for example Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical group [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0857—Static memory circuit, e.g. flip-flop
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001294269A JP4761681B2 (ja) | 2000-10-05 | 2001-09-26 | 液晶表示装置 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000305642 | 2000-10-05 | ||
| JP2000305642 | 2000-10-05 | ||
| JP2000-305642 | 2000-10-05 | ||
| JP2001294269A JP4761681B2 (ja) | 2000-10-05 | 2001-09-26 | 液晶表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002196306A JP2002196306A (ja) | 2002-07-12 |
| JP2002196306A5 JP2002196306A5 (enExample) | 2008-10-30 |
| JP4761681B2 true JP4761681B2 (ja) | 2011-08-31 |
Family
ID=26601577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001294269A Expired - Fee Related JP4761681B2 (ja) | 2000-10-05 | 2001-09-26 | 液晶表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4761681B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI277057B (en) | 2000-10-23 | 2007-03-21 | Semiconductor Energy Lab | Display device |
| US6927753B2 (en) | 2000-11-07 | 2005-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP3618687B2 (ja) | 2001-01-10 | 2005-02-09 | シャープ株式会社 | 表示装置 |
| JP3895966B2 (ja) * | 2001-10-19 | 2007-03-22 | 三洋電機株式会社 | 表示装置 |
| JP2004077567A (ja) | 2002-08-09 | 2004-03-11 | Semiconductor Energy Lab Co Ltd | 表示装置及びその駆動方法 |
| JP5320753B2 (ja) * | 2008-01-29 | 2013-10-23 | セイコーエプソン株式会社 | 電気泳動表示装置 |
| JP5525224B2 (ja) * | 2008-09-30 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6305725B2 (ja) * | 2013-10-29 | 2018-04-04 | 京セラディスプレイ株式会社 | ドットマトリクス型表示装置の駆動方法及びドットマトリクス型表示装置 |
| JP2018037477A (ja) * | 2016-08-30 | 2018-03-08 | 京セラディスプレイ株式会社 | ドットマトリクス型表示装置 |
| WO2019123088A1 (ja) * | 2017-12-21 | 2019-06-27 | 株式会社半導体エネルギー研究所 | 液晶表示装置、液晶表示装置の駆動方法、および電子機器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06102530A (ja) * | 1992-09-18 | 1994-04-15 | Sharp Corp | 液晶表示装置 |
| JPH08194205A (ja) * | 1995-01-18 | 1996-07-30 | Toshiba Corp | アクティブマトリックス型表示装置 |
| JP3305946B2 (ja) * | 1996-03-07 | 2002-07-24 | 株式会社東芝 | 液晶表示装置 |
| US6677936B2 (en) * | 1996-10-31 | 2004-01-13 | Kopin Corporation | Color display system for a camera |
| JPH10253941A (ja) * | 1997-03-13 | 1998-09-25 | Hitachi Ltd | マトリクス型画像表示装置 |
| US6380917B2 (en) * | 1997-04-18 | 2002-04-30 | Seiko Epson Corporation | Driving circuit of electro-optical device, driving method for electro-optical device, and electro-optical device and electronic equipment employing the electro-optical device |
| JPH11101967A (ja) * | 1997-07-31 | 1999-04-13 | Toshiba Corp | 液晶表示装置 |
| JP3564347B2 (ja) * | 1999-02-19 | 2004-09-08 | 株式会社東芝 | 表示装置の駆動回路及び液晶表示装置 |
| JP4521903B2 (ja) * | 1999-09-30 | 2010-08-11 | ティーピーオー ホンコン ホールディング リミテッド | 液晶表示装置 |
-
2001
- 2001-09-26 JP JP2001294269A patent/JP4761681B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002196306A (ja) | 2002-07-12 |
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