JP4761505B2 - 撮像装置、ならびに撮像システム - Google Patents

撮像装置、ならびに撮像システム Download PDF

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Publication number
JP4761505B2
JP4761505B2 JP2005055774A JP2005055774A JP4761505B2 JP 4761505 B2 JP4761505 B2 JP 4761505B2 JP 2005055774 A JP2005055774 A JP 2005055774A JP 2005055774 A JP2005055774 A JP 2005055774A JP 4761505 B2 JP4761505 B2 JP 4761505B2
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JP
Japan
Prior art keywords
color filter
photoelectric conversion
pixels
color
pixel
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Expired - Fee Related
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JP2005055774A
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English (en)
Japanese (ja)
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JP2006245101A5 (https=
JP2006245101A (ja
Inventor
森　　茂樹
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Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005055774A priority Critical patent/JP4761505B2/ja
Priority to US11/359,598 priority patent/US7683388B2/en
Publication of JP2006245101A publication Critical patent/JP2006245101A/ja
Publication of JP2006245101A5 publication Critical patent/JP2006245101A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2005055774A 2005-03-01 2005-03-01 撮像装置、ならびに撮像システム Expired - Fee Related JP4761505B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005055774A JP4761505B2 (ja) 2005-03-01 2005-03-01 撮像装置、ならびに撮像システム
US11/359,598 US7683388B2 (en) 2005-03-01 2006-02-23 Image pickup device with color filter arranged for each color on interlayer lenses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005055774A JP4761505B2 (ja) 2005-03-01 2005-03-01 撮像装置、ならびに撮像システム

Publications (3)

Publication Number Publication Date
JP2006245101A JP2006245101A (ja) 2006-09-14
JP2006245101A5 JP2006245101A5 (https=) 2008-04-17
JP4761505B2 true JP4761505B2 (ja) 2011-08-31

Family

ID=36943284

Family Applications (1)

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JP2005055774A Expired - Fee Related JP4761505B2 (ja) 2005-03-01 2005-03-01 撮像装置、ならびに撮像システム

Country Status (2)

Country Link
US (1) US7683388B2 (https=)
JP (1) JP4761505B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100937654B1 (ko) * 2006-12-12 2010-01-19 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
JP2009043772A (ja) * 2007-08-06 2009-02-26 Panasonic Corp 固体撮像装置及びその製造方法
JP4696104B2 (ja) * 2007-09-28 2011-06-08 富士フイルム株式会社 裏面照射型固体撮像素子及びその製造方法
JP5288823B2 (ja) 2008-02-18 2013-09-11 キヤノン株式会社 光電変換装置、及び光電変換装置の製造方法
JP5486838B2 (ja) * 2009-05-12 2014-05-07 シャープ株式会社 レンズの形成方法、半導体装置の製造方法および電子情報機器
JP4880794B1 (ja) 2011-04-22 2012-02-22 パナソニック株式会社 固体撮像装置とその製造方法
JP5845856B2 (ja) * 2011-11-30 2016-01-20 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
DE102014111945A1 (de) 2014-05-19 2015-11-19 Zentrum Mikroelektronik Dresden Ag Funktionseinheit mit strahlungsundurchlässigen Mitteln
KR102396031B1 (ko) * 2014-09-04 2022-05-12 에스케이하이닉스 주식회사 이미지 센서 및 이를 구비하는 전자장치
CN106920805A (zh) * 2015-12-28 2017-07-04 联华电子股份有限公司 影像感测器以及其制作方法
WO2020145218A1 (ja) * 2019-01-10 2020-07-16 富士フイルム株式会社 構造体、固体撮像素子および画像表示装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203663A (ja) * 1985-02-13 1986-09-09 Nec Corp 固体撮像装置の製造方法
JP2956132B2 (ja) 1990-06-01 1999-10-04 日本電気株式会社 固体撮像素子
JPH05183140A (ja) * 1991-10-31 1993-07-23 Matsushita Electron Corp 固体撮像装置およびその製造方法
JPH0685224A (ja) 1992-09-03 1994-03-25 Matsushita Electron Corp カラー固体撮像装置の製造方法
JPH07203317A (ja) * 1993-12-28 1995-08-04 Matsushita Electron Corp カラー固体撮像装置
US5739548A (en) * 1995-05-02 1998-04-14 Matsushita Electronics Corporation Solid state imaging device having a flattening layer and optical lenses
JP3405620B2 (ja) * 1995-05-22 2003-05-12 松下電器産業株式会社 固体撮像装置
JPH09116914A (ja) 1995-10-16 1997-05-02 Sony Corp 固体撮像素子用カラーフィルタおよびその製造方法
JPH09148549A (ja) 1995-11-25 1997-06-06 Sony Corp オンチップレンズ付カラー固体撮像素子
JP3809708B2 (ja) 1997-07-15 2006-08-16 ソニー株式会社 固体撮像素子並びにその製造方法
JP3620237B2 (ja) * 1997-09-29 2005-02-16 ソニー株式会社 固体撮像素子
JP4329142B2 (ja) 1998-11-24 2009-09-09 ソニー株式会社 層内レンズの形成方法
JP3747682B2 (ja) 1999-03-17 2006-02-22 凸版印刷株式会社 固体撮像素子及びその製造方法
JP2001033619A (ja) * 1999-07-23 2001-02-09 Sony Corp カラーフィルタの形成方法および固体撮像素子の製造方法
US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
US6566151B2 (en) * 2001-06-21 2003-05-20 United Microelectronics Corp. Method of forming a color filter
JP3789365B2 (ja) 2002-01-31 2006-06-21 シャープ株式会社 層内レンズ付き半導体装置およびその製造方法
JP2003229553A (ja) 2002-02-05 2003-08-15 Sharp Corp 半導体装置及びその製造方法
JP2003332548A (ja) 2002-05-16 2003-11-21 Fuji Film Microdevices Co Ltd 固体撮像素子及びその製造方法
JP2004133420A (ja) * 2002-09-20 2004-04-30 Seiko Epson Corp 光学デバイス及びその製造方法、表示装置、電子機器、並びに検査機器
JP2004111867A (ja) 2002-09-20 2004-04-08 Canon Inc 固体撮像素子
JP4310093B2 (ja) * 2002-10-09 2009-08-05 キヤノン株式会社 固体撮像素子の製造方法
JP4383959B2 (ja) * 2003-05-28 2009-12-16 キヤノン株式会社 光電変換装置およびその製造方法
JP2005033074A (ja) 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2005079344A (ja) * 2003-08-29 2005-03-24 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP4208072B2 (ja) * 2003-12-05 2009-01-14 シャープ株式会社 半導体素子およびその製造方法
EP1557886A3 (en) * 2004-01-26 2006-06-07 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device and camera
KR100585137B1 (ko) * 2004-03-10 2006-06-01 삼성전자주식회사 높은 집광 효율을 갖는 ｃｍｏｓ 이미지 소자 및 그제조방법
US7427798B2 (en) * 2004-07-08 2008-09-23 Micron Technology, Inc. Photonic crystal-based lens elements for use in an image sensor

Also Published As

Publication number Publication date
US20060197097A1 (en) 2006-09-07
JP2006245101A (ja) 2006-09-14
US7683388B2 (en) 2010-03-23

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