JP4756146B2 - 厚膜形成用のフォトレジスト組成物 - Google Patents
厚膜形成用のフォトレジスト組成物 Download PDFInfo
- Publication number
- JP4756146B2 JP4756146B2 JP2006504597A JP2006504597A JP4756146B2 JP 4756146 B2 JP4756146 B2 JP 4756146B2 JP 2006504597 A JP2006504597 A JP 2006504597A JP 2006504597 A JP2006504597 A JP 2006504597A JP 4756146 B2 JP4756146 B2 JP 4756146B2
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- JP
- Japan
- Prior art keywords
- photoresist
- surfactant
- substrate
- photoresist film
- alpha
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 229920002120 photoresistant polymer Polymers 0.000 title claims description 111
- 239000000203 mixture Substances 0.000 title claims description 50
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000004094 surface-active agent Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 36
- 150000001875 compounds Chemical class 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 229920003986 novolac Polymers 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 13
- 239000002736 nonionic surfactant Substances 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 229920002313 fluoropolymer Polymers 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 239000012670 alkaline solution Substances 0.000 claims 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- 239000010408 film Substances 0.000 description 38
- 238000000576 coating method Methods 0.000 description 29
- 239000011248 coating agent Substances 0.000 description 28
- 239000000243 solution Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- -1 phenol compound Chemical class 0.000 description 15
- 239000000306 component Substances 0.000 description 13
- 238000011161 development Methods 0.000 description 10
- 239000007983 Tris buffer Substances 0.000 description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 9
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 150000002989 phenols Chemical class 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical class [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 150000001299 aldehydes Chemical class 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Natural products OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 description 2
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 2
- CPEXFJVZFNYXGU-UHFFFAOYSA-N 2,4,6-trihydroxybenzophenone Chemical compound OC1=CC(O)=CC(O)=C1C(=O)C1=CC=CC=C1 CPEXFJVZFNYXGU-UHFFFAOYSA-N 0.000 description 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XNWPXDGRBWJIES-UHFFFAOYSA-N Maclurin Natural products OC1=CC(O)=CC(O)=C1C(=O)C1=CC=C(O)C(O)=C1 XNWPXDGRBWJIES-UHFFFAOYSA-N 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007859 condensation product Substances 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical class C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- HOKNTYWEKQQKGV-UHFFFAOYSA-N disulfonylmethane Chemical class O=S(=O)=C=S(=O)=O HOKNTYWEKQQKGV-UHFFFAOYSA-N 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 150000002191 fatty alcohols Chemical class 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 229920002866 paraformaldehyde Polymers 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 150000003440 styrenes Chemical class 0.000 description 2
- 150000003462 sulfoxides Chemical class 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- XEDWWPGWIXPVRQ-UHFFFAOYSA-N (2,3,4-trihydroxyphenyl)-(3,4,5-trihydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC(O)=C(O)C(O)=C1 XEDWWPGWIXPVRQ-UHFFFAOYSA-N 0.000 description 1
- QWRVAXMLZCMVSL-UHFFFAOYSA-N (2,4,6-trihydroxyphenyl)-(3,4,5-trihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC(O)=C1C(=O)C1=CC(O)=C(O)C(O)=C1 QWRVAXMLZCMVSL-UHFFFAOYSA-N 0.000 description 1
- GBQZZLQKUYLGFT-UHFFFAOYSA-N (2,4-dihydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O GBQZZLQKUYLGFT-UHFFFAOYSA-N 0.000 description 1
- OKJFKPFBSPZTAH-UHFFFAOYSA-N (2,4-dihydroxyphenyl)-(4-hydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O OKJFKPFBSPZTAH-UHFFFAOYSA-N 0.000 description 1
- AXIIFBJDJHDNGW-UHFFFAOYSA-N (2,5-dihydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound OC1=CC=C(O)C(C(=O)C=2C(=C(O)C(O)=CC=2)O)=C1 AXIIFBJDJHDNGW-UHFFFAOYSA-N 0.000 description 1
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical class OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- XLBGWOVCPLFKCQ-UHFFFAOYSA-N (2-methylphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound CC1=CC=CC=C1C(=O)C1=CC=C(O)C(O)=C1O XLBGWOVCPLFKCQ-UHFFFAOYSA-N 0.000 description 1
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- POFMQEVZKZVAPQ-UHFFFAOYSA-N 1,1,1',1'-tetramethyl-3,3'-spirobi[2h-indene]-5,5',6,6'-tetrol Chemical compound C12=CC(O)=C(O)C=C2C(C)(C)CC11C2=CC(O)=C(O)C=C2C(C)(C)C1 POFMQEVZKZVAPQ-UHFFFAOYSA-N 0.000 description 1
- VLLPVDKADBYKLM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 VLLPVDKADBYKLM-UHFFFAOYSA-M 0.000 description 1
- AUFHDXQTTXTQSC-UHFFFAOYSA-N 1,11-bis(2,3,4-trihydroxyphenyl)undecan-6-one Chemical compound OC1=C(O)C(O)=CC=C1CCCCCC(=O)CCCCCC1=CC=C(O)C(O)=C1O AUFHDXQTTXTQSC-UHFFFAOYSA-N 0.000 description 1
- BJTXPZYDJTYEBV-UHFFFAOYSA-N 1,13-bis(2,3,4-trihydroxyphenyl)tridecan-7-one Chemical compound OC1=C(O)C(O)=CC=C1CCCCCCC(=O)CCCCCCC1=CC=C(O)C(O)=C1O BJTXPZYDJTYEBV-UHFFFAOYSA-N 0.000 description 1
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 1
- XPJSWQIGULIVBS-UHFFFAOYSA-N 1,3-bis(2,3,4-trihydroxyphenyl)propane-1,3-dione Chemical compound OC1=C(O)C(O)=CC=C1C(=O)CC(=O)C1=CC=C(O)C(O)=C1O XPJSWQIGULIVBS-UHFFFAOYSA-N 0.000 description 1
- DSAUCRKFFBMTMD-UHFFFAOYSA-N 1-[5-[(5-acetyl-2,3,4-trihydroxyphenyl)methyl]-2,3,4-trihydroxyphenyl]ethanone Chemical compound OC1=C(O)C(C(=O)C)=CC(CC=2C(=C(O)C(O)=C(C(C)=O)C=2)O)=C1O DSAUCRKFFBMTMD-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- XIROXSOOOAZHLL-UHFFFAOYSA-N 2',3',4'-Trihydroxyacetophenone Chemical compound CC(=O)C1=CC=C(O)C(O)=C1O XIROXSOOOAZHLL-UHFFFAOYSA-N 0.000 description 1
- XRUGBBIQLIVCSI-UHFFFAOYSA-N 2,3,4-trimethylphenol Chemical compound CC1=CC=C(O)C(C)=C1C XRUGBBIQLIVCSI-UHFFFAOYSA-N 0.000 description 1
- KUFFULVDNCHOFZ-UHFFFAOYSA-N 2,4-xylenol Chemical compound CC1=CC=C(O)C(C)=C1 KUFFULVDNCHOFZ-UHFFFAOYSA-N 0.000 description 1
- CYZGUHGZRDMUGY-UHFFFAOYSA-N 2,6-di(propan-2-yl)-4-[2,4,6-tri(propan-2-yl)phenyl]phenol Chemical compound CC(C)C1=CC(C(C)C)=CC(C(C)C)=C1C1=CC(C(C)C)=C(O)C(C(C)C)=C1 CYZGUHGZRDMUGY-UHFFFAOYSA-N 0.000 description 1
- CFMYEEDECUMBDV-UHFFFAOYSA-N 2,6-dibutyl-4-[2,4,6-tri(propan-2-yl)phenyl]phenol Chemical compound C(CCC)C=1C=C(C=C(C1O)CCCC)C1=C(C=C(C=C1C(C)C)C(C)C)C(C)C CFMYEEDECUMBDV-UHFFFAOYSA-N 0.000 description 1
- UTWLIGRUVAFYIP-UHFFFAOYSA-N 2,6-diethyl-4-[2,4,6-tri(propan-2-yl)phenyl]phenol Chemical compound CCC1=C(O)C(CC)=CC(C=2C(=CC(=CC=2C(C)C)C(C)C)C(C)C)=C1 UTWLIGRUVAFYIP-UHFFFAOYSA-N 0.000 description 1
- GHWWVMNSJDPRMM-UHFFFAOYSA-N 2,6-dimethyl-4-[2,4,6-tri(propan-2-yl)phenyl]phenol Chemical compound CC(C)C1=CC(C(C)C)=CC(C(C)C)=C1C1=CC(C)=C(O)C(C)=C1 GHWWVMNSJDPRMM-UHFFFAOYSA-N 0.000 description 1
- FOLBURZAZWAGCU-UHFFFAOYSA-N 2,6-dipropyl-4-[2,4,6-tri(propan-2-yl)phenyl]phenol Chemical compound CCCC1=C(O)C(CCC)=CC(C=2C(=CC(=CC=2C(C)C)C(C)C)C(C)C)=C1 FOLBURZAZWAGCU-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- CJWNFAKWHDOUKL-UHFFFAOYSA-N 2-(2-phenylpropan-2-yl)phenol Chemical compound C=1C=CC=C(O)C=1C(C)(C)C1=CC=CC=C1 CJWNFAKWHDOUKL-UHFFFAOYSA-N 0.000 description 1
- PFTHQRBULKATPZ-UHFFFAOYSA-N 2-(3,4,5-trihydroxybenzoyl)oxyethyl 3,4,5-trihydroxybenzoate Chemical compound OC1=C(O)C(O)=CC(C(=O)OCCOC(=O)C=2C=C(O)C(O)=C(O)C=2)=C1 PFTHQRBULKATPZ-UHFFFAOYSA-N 0.000 description 1
- AZKQVMZEZRNXKG-UHFFFAOYSA-N 2-(3,5-dihydroxybenzoyl)oxyethyl 3,5-dihydroxybenzoate Chemical compound OC1=CC(O)=CC(C(=O)OCCOC(=O)C=2C=C(O)C=C(O)C=2)=C1 AZKQVMZEZRNXKG-UHFFFAOYSA-N 0.000 description 1
- KICYRZIVKKYRFS-UHFFFAOYSA-N 2-(3,5-dihydroxyphenyl)benzene-1,3,5-triol Chemical compound OC1=CC(O)=CC(C=2C(=CC(O)=CC=2O)O)=C1 KICYRZIVKKYRFS-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 1
- QSKPIOLLBIHNAC-UHFFFAOYSA-N 2-chloro-acetaldehyde Chemical compound ClCC=O QSKPIOLLBIHNAC-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/0166—Diazonium salts or compounds characterised by the non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
(a)ポリヒドロキシベンゾフェノン類、例えば2,3,4−トリヒドロキシベンゾフェノン、2,4,4'−トリヒドロキシベンゾフェノン、2,4,6−トリヒドロキシベンゾフェノン、2,3,4−トリヒドロキシ−2'−メチルベンゾフェノン、2,3,4,4'−テトラヒドロキシベンゾフェノン、2,2'4,4'−テトラヒドロキシベンゾフェノン、2,4,6,3',4'−ペンタヒドロキシベンゾフェノン、2,3,4,2',4'−ペンタヒドロキシ−ベンゾフェノン、2,3,4,2',5'−ペンタヒドロキシベンゾフェノン、2,4,6,3',4',5'−ヘキサヒドロキシベンゾフェノン、及び2,3,4,3',4',5'−ヘキサヒドロキシベンゾフェノン;
(b)ポリヒドロキシフェニルアルキルケトン類、例えば2,3,4−トリヒドロキシアセトフェノン、2,3,4−トリヒドロキシフェニルペンチルケトン、及び2,3,4−トリヒドロキシフェニルヘキシルケトン;
(c)ビス(ポリヒドロキシフェニル)アルカン類、例えばビス(2,3,4−トリヒドロキシフェニル)メタン、ビス(2,4−ジヒドロキシフェニル)メタン、及びビス(2,3,4−トリヒドロキシフェニル)プロパン;
(d)ポリヒドロキシベンゾエート類、例えばプロピル3,4,5−トリヒドロキシ−ベンゾエート、フェニル2,3,4−トリヒドロキシベンゾエート、及びフェニル3,4,5−トリヒドロキシベンゾエート;
(e)ビス(ポリヒドロキシベンゾイル)アルカン類またはビス(ポリヒドロキシベンゾイル)アリール類、例えばビス(2,3,4−トリヒドロキシベンゾイル)メタン、ビス(3−アセチル−4,5,6−トリヒドロキシフェニル)メタン、ビス(2,3,4−トリヒドロキシベンゾイル)ベンゼン、及びビス(2,4,6−トリヒドロキシベンゾイル)ベンゼン;
(f)アルキレンジ(ポリヒドロキシベンゾエート)、例えばエチレングリコール−ジ(3,5−ジヒドロキシベンゾエート)及びエチレングリコールジ(3,4,5−トリヒドロキシベンゾエート);
(g)ポリヒドロキシビフェニル類、例えば2,3,4−ビフェニルトリオール、3,4,5−ビフェニルトリオール、3,5,3'5'−ビフェニルテトロール、2,4,2',4'−ビフェニルテトロール、2,4,6,3',5'−ビフェニルペントール、2,4,6,2',4',6'−ビフェニルヘキソール、及び2,3,4,2',3',4'−ビフェニルヘキソール;
(h)ビス(ポリヒドロキシ)スルフィド類、例えば4,4'−チオビス(1,3−ジヒドロキシ)ベンゼン;
(i)ビス(ポリヒドロキシフェニル)エーテル類、例えば2,2'4,4'−テトラヒドロキシジフェニルエーテル;
(j)ビス(ポリヒドロキシフェニル)スルホキシド類、例えば2,2'4,4'−テトラヒドロキシジフェニルスルホキシド;
(k)ビス(ポリヒドロキシフェニル)スルホン類、例えば2,2',4,4'−テトラヒドロキシジフェニルスルホン;
(l)ポリヒドロキシトリフェニルメタン類、例えばトリス(4−ヒドロキシフェニル)メタン)、4,4',4"−トリヒドロキシ−3,5,3',5'−テトラメチルトリフェニルメタン、4,4',3",4"−テトラヒドロキシ−3,5,3',5'−テトラメチルトリフェニルメタン、4,4',2",3",4"−ペンタヒドロキシ−3,5,3',5'−テトラメチルトリフェニルメタン、2,3,4,2',3',4'−ヘキサヒドロキシ−5,5'−ジアセチルトリフェニルメタン、2,3,4,2',3',4',3",4"−オクタヒドロキシ−5,5−ジアセチルトリフェニルメタン、及び2,4,6,2',4',6'−ヘキサヒドロキシ−5,5'−ジプロピオニルトリフェニルメタン;
(m)ポリヒドロキシ−スピロビ−インダン類、例えば3,3,3',3'−テトラメチル−1,1'−スピロビ−インダン−5,6,5',6'−テトロール、3,3,3'3'−テトラメチル−1,1'−スピロビ−インダン−5,6,7,6'6',7'−ヘキソール、及び3,3,3'3'−テトラメチル−1,1'−スピロビ−インダン−4,5,6,4',5',6'−ヘキソール;
(n)ポリヒドロキシフタリド類、例えば3,3−ビス(3,4−ジヒドロキシフェニル)フタリド、3,3−ビス(2,3,4−トリヒドロキシフェニル)フタリド、及び3',4',5',6'−テトラヒドロキシスピロ(フタリド−3,9'−キサンテン);
(o)特開平4-253058号公報に記載されているポリヒドロキシ化合物、例えばアルファ,アルファ',アルファ"−トリス(4−ヒドロキシフェニル)−1,3,5−トリイソプロピルベンゼン、アルファ,アルファ',アルファ"−トリス(3,5−ジメチル−4−ヒドロキシフェニル)−1,3,5−トリイソプロピルベンゼン、アルファ,アルファ',アルファ"−トリス(3,5−ジエチル−4−ヒドロキシフェニル)−1,3,5−トリイソプロピルベンゼン、アルファ,アルファ',アルファ"−トリス(3,5−ジ−n−プロピル−4−ヒドロキシフェニル)−1,3,5−トリ−イソプロピルベンゼン、アルファ,アルファ',アルファ"−トリス(3,5−ジイソプロピル−4−ヒドロキシフェニル)−1,3,5−トリイソプロピルベンゼン、アルファ,アルファ',アルファ"−トリス(3,5−ジ−n−ブチル−4−ヒドロキシフェニル)−1,3,5−トリイソプロピルベンゼン、アルファ,アルファ',アルファ"−トリス(3−メチル−4−ヒドロキシフェニル)−1,3,5−トリイソプロピル−ベンゼン、アルファ,アルファ',アルファ"−トリス(3−メトキシ−4−ヒドロキシフェニル)−1,3,5−トリイソプロピルベンゼン、アルファ,アルファ',アルファ"−トリス(2,4−ジヒドロキシフェニル)−1,3,5−トリイソプロピルベンゼン、2,4,6−トリス(3,5−ジメチル−4−ヒドロキシフェニルチオメチル)メシチレン、1−[アルファ−メチル−アルファ−(4"−ヒドロキシフェニル)エチル]−4−[アルファ,アルファ'−ビス(4"−ヒドロキシフェニル)エチル]ベンゼン、1−[アルファ−メチル−アルファ−(4'−ヒドロキシフェニル)エチル]−3−[アルファ,アルファ'−ビス(4"−ヒドロキシ−フェニル)エチル]ベンゼン、1−[アルファ−メチル−アルファ−(3',5'−ジメチル−4'−ヒドロキシフェニル)エチル]ベンゼン、1−[アルファ−メチル−アルファ−(3'−メトキシ−4'−ヒドロキシフェニル)エチル]−4−[アルファ',アルファ'−ビス(3'−メトキシ−4'−ヒドロキシフェニル)エチル]ベンゼン、及び1-[アルファ-メチル-アルファ-(2',4'-ジヒドロキシフェニル)エチル]-4-[アルファ,アルファ'-ビス(4'-ヒドロキシフェニル)エチル]ベンゼン。
Claims (10)
- 次の段階、すなわち、
a)フォトレジスト組成物を基材上に塗布し、次いでこうして塗布された組成物をベーク処理することよって、基材上にフォトレジスト膜を形成する段階、ここで、
・段階a)で形成されるフォトレジスト膜の厚さは20ミクロンを超え、
・前記フォトレジスト組成物は、
・・アルカリ可溶性樹脂としての、ノボラック樹脂、
・・光活性化合物としての、2,1,5−または2,1,4−ジアゾナフトキノン化合物とヒドロキシル含有化合物との反応生成物、
・・界面活性剤としての、非イオン性界面活性剤、及び
・・溶媒
を含み;
・ここで界面活性剤の量は、フォトレジストの全重量に対し2,000ppm〜14,000ppmの範囲であり、
b)上記フォトレジスト膜を像様露光する段階;
c)場合によっては、上記フォトレジスト膜を露光後ベーク処理する段階; 及び
d)上記フォトレジスト膜を水性アルカリ性溶液で現像する段階、
を含む、フォトレジスト組成物に像を形成する方法。 - 水性アルカリ性溶液が、テトラメチルアンモニウムヒドロキシド、水酸化ナトリウム及び水酸化カリウムから選択される塩基を含む、請求項1の方法。
- 水性アルカリ性溶液が更に界面活性剤を含む、請求項1の方法。
- フォトレジスト膜の厚さが150ミクロン未満である、請求項1の方法。
- 溶媒が、フォトレジスト組成物全体の30重量%〜70重量%の量でフォトレジスト組成物中に存在する、請求項1の方法。
- 界面活性剤が、フッ素化ポリマー及び/またはシリコーンポリマーである、請求項1の方法。
- 基材、及びその上にフォトレジスト膜とを含む被覆された基材であって、
・前記フォトレジスト膜の厚さが20ミクロンを超え、
・前記フォトレジスト膜は、
・・アルカリ可溶性樹脂としての、ノボラック樹脂、
・・光活性化合物としての、2,1,5−または2,1,4−ジアゾナフトキノン化合物とヒドロキシル含有化合物との反応生成物、
・・界面活性剤としての、非イオン性界面活性剤、及び
・・溶媒
を含むフォトレジスト組成物から形成され、ここで界面活性剤の量は、フォトレジストの全重量に対し2,000ppm〜14,000ppmの範囲である、前記基材。 - 前記フォトレジスト膜の厚さが150ミクロン未満である、請求項7の被覆された基材。
- 溶媒が、フォトレジスト組成物全体の30重量%〜70重量%の量でフォトレジスト組成物中に存在する、請求項7の被覆された基材。
- 界面活性剤が、フッ素化ポリマー及び/またはシリコーンポリマーである、請求項7の被覆された基材。
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US10/393,925 US6852465B2 (en) | 2003-03-21 | 2003-03-21 | Photoresist composition for imaging thick films |
PCT/EP2004/002391 WO2004083962A2 (en) | 2003-03-21 | 2004-03-09 | Photoresist composition for the formation of thick films |
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JP4586703B2 (ja) * | 2004-10-14 | 2010-11-24 | 住友化学株式会社 | 感放射線性樹脂組成物 |
JP4655864B2 (ja) * | 2004-10-14 | 2011-03-23 | 住友化学株式会社 | 感放射線性樹脂組成物 |
US7524606B2 (en) * | 2005-04-11 | 2009-04-28 | Az Electronic Materials Usa Corp. | Nanocomposite photoresist composition for imaging thick films |
US7247419B2 (en) * | 2005-04-11 | 2007-07-24 | Az Electronic Materials Usa Corp. | Nanocomposite photosensitive composition and use thereof |
US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
KR100896149B1 (ko) * | 2006-03-31 | 2009-05-11 | 주식회사 에이디피엔지니어링 | 배기 및 충진 장치 |
JP5631732B2 (ja) * | 2007-03-23 | 2014-11-26 | カウンスィル オブ サイエンティフィック アンド インダストリアル リサーチCouncil Of Scientific & Industrial Research | フォトリソグラフィクサブミクロンパターン化に有効な新規なジアゾナフトキノンスルホニク酸ビスフェノール誘導体、及びその作成方法 |
US20100151118A1 (en) * | 2008-12-17 | 2010-06-17 | Eastman Chemical Company | Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings |
JP5814103B2 (ja) * | 2011-12-16 | 2015-11-17 | 東京応化工業株式会社 | 厚膜ホトレジストパターンの製造方法 |
US11385543B2 (en) | 2016-08-09 | 2022-07-12 | Merck Patent Gmbh | Enviromentally stable, thick film, chemically amplified resist |
CN108777769B (zh) * | 2018-05-31 | 2020-02-18 | 歌尔股份有限公司 | 相机曝光时间调整方法、装置及设备 |
TWI751568B (zh) | 2020-05-29 | 2022-01-01 | 新應材股份有限公司 | 蝕刻劑組成物、增黏劑、鹼溶液、移除聚醯亞胺的方法以及蝕刻製程 |
CN113736466B (zh) * | 2020-05-29 | 2023-05-12 | 新应材股份有限公司 | 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺 |
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- 2004-03-09 EP EP04718629A patent/EP1609025A2/en not_active Withdrawn
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WO2004083962A2 (en) | 2004-09-30 |
JP2006520922A (ja) | 2006-09-14 |
TWI341439B (en) | 2011-05-01 |
TW200428139A (en) | 2004-12-16 |
MY127374A (en) | 2006-11-30 |
JP5320631B2 (ja) | 2013-10-23 |
WO2004083962A3 (en) | 2004-12-02 |
US6852465B2 (en) | 2005-02-08 |
KR101069784B1 (ko) | 2011-10-05 |
CN1761915A (zh) | 2006-04-19 |
KR20050114668A (ko) | 2005-12-06 |
EP1609025A2 (en) | 2005-12-28 |
CN100585492C (zh) | 2010-01-27 |
JP2010102348A (ja) | 2010-05-06 |
US20040185368A1 (en) | 2004-09-23 |
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