JP4754795B2 - 表示装置及び表示装置の作製方法 - Google Patents

表示装置及び表示装置の作製方法 Download PDF

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Publication number
JP4754795B2
JP4754795B2 JP2004270984A JP2004270984A JP4754795B2 JP 4754795 B2 JP4754795 B2 JP 4754795B2 JP 2004270984 A JP2004270984 A JP 2004270984A JP 2004270984 A JP2004270984 A JP 2004270984A JP 4754795 B2 JP4754795 B2 JP 4754795B2
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Japan
Prior art keywords
film
insulating film
electrode
forming
interlayer insulating
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Expired - Fee Related
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JP2004270984A
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English (en)
Japanese (ja)
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JP2005115362A5 (enExample
JP2005115362A (ja
Inventor
舜平 山崎
真之 坂倉
雅晴 永井
豊 松田
健吾 秋元
厳 藤井
哲司 山口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004270984A priority Critical patent/JP4754795B2/ja
Publication of JP2005115362A publication Critical patent/JP2005115362A/ja
Publication of JP2005115362A5 publication Critical patent/JP2005115362A5/ja
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Publication of JP4754795B2 publication Critical patent/JP4754795B2/ja
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2004270984A 2003-09-19 2004-09-17 表示装置及び表示装置の作製方法 Expired - Fee Related JP4754795B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004270984A JP4754795B2 (ja) 2003-09-19 2004-09-17 表示装置及び表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003328928 2003-09-19
JP2003328928 2003-09-19
JP2004270984A JP4754795B2 (ja) 2003-09-19 2004-09-17 表示装置及び表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005115362A JP2005115362A (ja) 2005-04-28
JP2005115362A5 JP2005115362A5 (enExample) 2007-10-18
JP4754795B2 true JP4754795B2 (ja) 2011-08-24

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JP2004270984A Expired - Fee Related JP4754795B2 (ja) 2003-09-19 2004-09-17 表示装置及び表示装置の作製方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101272488B1 (ko) * 2005-10-18 2013-06-07 삼성디스플레이 주식회사 박막트랜지스터 기판, 이의 제조방법 및 이를 가지는 액정표시 패널과 이 액정 표시 패널의 제조방법
JP2007242895A (ja) * 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
JP5104274B2 (ja) * 2007-02-08 2012-12-19 セイコーエプソン株式会社 発光装置
JP5109542B2 (ja) * 2007-09-18 2012-12-26 カシオ計算機株式会社 表示装置の製造方法
US9224759B2 (en) * 2010-12-20 2015-12-29 Japan Display Inc. Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus
US9246299B2 (en) * 2011-08-04 2016-01-26 Martin A. Stuart Slab laser and amplifier
KR101903671B1 (ko) * 2011-10-07 2018-10-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US10749123B2 (en) 2014-03-27 2020-08-18 Universal Display Corporation Impact resistant OLED devices
US10910590B2 (en) 2014-03-27 2021-02-02 Universal Display Corporation Hermetically sealed isolated OLED pixels
TWI776722B (zh) * 2014-05-15 2022-09-01 日商半導體能源研究所股份有限公司 發光元件、發光裝置、電子裝置以及照明設備
US10991778B2 (en) * 2018-03-28 2021-04-27 Sakai Display Products Corporation Organic EL display apparatus and manufacturing method therefor
WO2021199189A1 (ja) * 2020-03-30 2021-10-07 シャープ株式会社 表示装置およびその製造方法
WO2024180672A1 (ja) * 2023-02-28 2024-09-06 シャープディスプレイテクノロジー株式会社 画素回路基板、表示装置、及び画素回路基板の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08293493A (ja) * 1995-04-24 1996-11-05 Sony Corp 平坦化絶縁膜の形成方法
JPH11243209A (ja) * 1998-02-25 1999-09-07 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器
JP3776600B2 (ja) * 1998-08-13 2006-05-17 Ｔｄｋ株式会社 有機ｅｌ素子
JP2001313338A (ja) * 2000-02-22 2001-11-09 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4040850B2 (ja) * 2000-07-24 2008-01-30 Ｔｄｋ株式会社 発光素子
JP2002246608A (ja) * 2000-11-09 2002-08-30 Semiconductor Energy Lab Co Ltd 半導体装置
JP4969001B2 (ja) * 2001-09-20 2012-07-04 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP4101511B2 (ja) * 2001-12-27 2008-06-18 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP2003257657A (ja) * 2001-12-28 2003-09-12 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法、および製造装置

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JP2005115362A (ja) 2005-04-28

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