JP4754677B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4754677B2
JP4754677B2 JP2000232528A JP2000232528A JP4754677B2 JP 4754677 B2 JP4754677 B2 JP 4754677B2 JP 2000232528 A JP2000232528 A JP 2000232528A JP 2000232528 A JP2000232528 A JP 2000232528A JP 4754677 B2 JP4754677 B2 JP 4754677B2
Authority
JP
Japan
Prior art keywords
substrate
semiconductor device
manufacturing
film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000232528A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002049056A (ja
JP2002049056A5 (https=
Inventor
舜平 山崎
悦子 藤本
智史 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000232528A priority Critical patent/JP4754677B2/ja
Publication of JP2002049056A publication Critical patent/JP2002049056A/ja
Publication of JP2002049056A5 publication Critical patent/JP2002049056A5/ja
Application granted granted Critical
Publication of JP4754677B2 publication Critical patent/JP4754677B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Thin Film Transistor (AREA)
JP2000232528A 2000-07-31 2000-07-31 半導体装置の作製方法 Expired - Fee Related JP4754677B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000232528A JP4754677B2 (ja) 2000-07-31 2000-07-31 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000232528A JP4754677B2 (ja) 2000-07-31 2000-07-31 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002049056A JP2002049056A (ja) 2002-02-15
JP2002049056A5 JP2002049056A5 (https=) 2007-09-20
JP4754677B2 true JP4754677B2 (ja) 2011-08-24

Family

ID=18725202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000232528A Expired - Fee Related JP4754677B2 (ja) 2000-07-31 2000-07-31 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4754677B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583568B2 (ja) * 2000-09-19 2010-11-17 株式会社半導体エネルギー研究所 発光装置の作製方法
US6956324B2 (en) 2000-08-04 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
JP3643025B2 (ja) * 2000-10-20 2005-04-27 シャープ株式会社 アクティブマトリクス型表示装置およびその製造方法
JP4389447B2 (ja) * 2003-01-28 2009-12-24 セイコーエプソン株式会社 電気光学装置の製造方法
TW594210B (en) * 2003-08-28 2004-06-21 Ind Tech Res Inst A method for manufacturing a flexible panel for FPD
GB0323285D0 (en) * 2003-10-04 2003-11-05 Koninkl Philips Electronics Nv Device and method of making a device having a patterned layer on a flexible substrate
JP4529414B2 (ja) * 2003-10-29 2010-08-25 セイコーエプソン株式会社 電気光学装置用基板の製造方法
KR100698692B1 (ko) * 2005-07-20 2007-03-23 삼성에스디아이 주식회사 평판표시장치
US8581247B2 (en) * 2009-03-31 2013-11-12 Panasonic Corporation Flexible semiconductor device having gate electrode disposed within an opening of a resin film
CN106783682B (zh) * 2016-12-15 2019-11-22 武汉华星光电技术有限公司 柔性显示屏制作装置及制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3249698B2 (ja) * 1994-12-15 2002-01-21 シャープ株式会社 表示装置
JP3831028B2 (ja) * 1996-12-03 2006-10-11 シチズン時計株式会社 液晶表示装置

Also Published As

Publication number Publication date
JP2002049056A (ja) 2002-02-15

Similar Documents

Publication Publication Date Title
JP4845273B2 (ja) 半導体装置およびその作製方法
US6956324B2 (en) Semiconductor device and manufacturing method therefor
JP4666723B2 (ja) 半導体装置の作製方法
JP4727024B2 (ja) 半導体装置の作製方法
JP5427969B2 (ja) 半導体装置の作製方法
JP4118485B2 (ja) 半導体装置の作製方法
JP4485078B2 (ja) 半導体装置の作製方法
JP4566475B2 (ja) 発光装置の作製方法
JP5292217B2 (ja) 半導体装置の作製方法及び電子書籍の作製方法
JP4754677B2 (ja) 半導体装置の作製方法
JP4993826B2 (ja) 半導体装置の作製方法
JP3961310B2 (ja) 半導体装置の作製方法
JP4916620B2 (ja) 液晶表示装置及び電気光学装置
JP3983460B2 (ja) 半導体装置の作製方法
JP5143272B2 (ja) Ｅｌ表示装置の作製方法
JP2002064107A (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070725

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070725

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100831

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101102

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110421

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110517

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110526

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140603

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140603

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees