JP4753888B2 - 基板保持機構及びプラズマ処理装置 - Google Patents
基板保持機構及びプラズマ処理装置 Download PDFInfo
- Publication number
- JP4753888B2 JP4753888B2 JP2007006321A JP2007006321A JP4753888B2 JP 4753888 B2 JP4753888 B2 JP 4753888B2 JP 2007006321 A JP2007006321 A JP 2007006321A JP 2007006321 A JP2007006321 A JP 2007006321A JP 4753888 B2 JP4753888 B2 JP 4753888B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processed
- gas
- substrate holding
- mounting table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 239000004065 semiconductor Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 6
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
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- 238000001179 sorption measurement Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007006321A JP4753888B2 (ja) | 2007-01-15 | 2007-01-15 | 基板保持機構及びプラズマ処理装置 |
KR1020080004033A KR100929448B1 (ko) | 2007-01-15 | 2008-01-14 | 기판 유지 기구 및 플라즈마 처리 장치 |
TW097101385A TWI421970B (zh) | 2007-01-15 | 2008-01-14 | A substrate holding mechanism and a plasma processing device |
CN2008100034479A CN101226894B (zh) | 2007-01-15 | 2008-01-15 | 基板保持机构和等离子体处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007006321A JP4753888B2 (ja) | 2007-01-15 | 2007-01-15 | 基板保持機構及びプラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008172170A JP2008172170A (ja) | 2008-07-24 |
JP4753888B2 true JP4753888B2 (ja) | 2011-08-24 |
Family
ID=39699956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007006321A Expired - Fee Related JP4753888B2 (ja) | 2007-01-15 | 2007-01-15 | 基板保持機構及びプラズマ処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4753888B2 (zh) |
KR (1) | KR100929448B1 (zh) |
CN (1) | CN101226894B (zh) |
TW (1) | TWI421970B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010045071A (ja) * | 2008-08-08 | 2010-02-25 | Nikon Corp | 検知装置、基板保持部材、搬送装置および接合装置 |
JP5871453B2 (ja) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | プラズマ処理装置,基板保持機構,基板位置ずれ検出方法 |
JP5689283B2 (ja) * | 2010-11-02 | 2015-03-25 | 東京エレクトロン株式会社 | 基板処理方法及びその方法を実行するプログラムを記憶する記憶媒体 |
CN104538334B (zh) * | 2014-12-17 | 2017-08-08 | 中国地质大学(北京) | 一种多功能等离子体腔室处理系统 |
KR101632606B1 (ko) * | 2014-12-30 | 2016-06-23 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR101694754B1 (ko) * | 2016-09-08 | 2017-01-11 | (주)브이앤아이솔루션 | 정전척 및 그 제조방법 |
US9922857B1 (en) * | 2016-11-03 | 2018-03-20 | Lam Research Corporation | Electrostatically clamped edge ring |
KR102397545B1 (ko) | 2017-05-02 | 2022-05-12 | 삼성전자주식회사 | 척 스테이지 이물질 감지 장치 |
KR102056855B1 (ko) * | 2018-05-29 | 2019-12-17 | 세메스 주식회사 | 기판 처리 방법 및 장치 |
JP7203585B2 (ja) * | 2018-12-06 | 2023-01-13 | 東京エレクトロン株式会社 | 基板支持器、基板処理装置、基板処理システム、及び基板支持器における接着剤の浸食を検出する方法 |
JP7058239B2 (ja) * | 2019-03-14 | 2022-04-21 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10144771A (ja) * | 1996-11-06 | 1998-05-29 | Sony Corp | 半導体製造装置 |
JP4030030B2 (ja) * | 1998-04-24 | 2008-01-09 | キヤノンアネルバ株式会社 | 静電吸着ホルダの吸着力検出方法と装置 |
JP2001189374A (ja) * | 1999-12-28 | 2001-07-10 | Nikon Corp | 基板処理装置及び荷電粒子線露光装置 |
JP4126286B2 (ja) * | 2001-02-08 | 2008-07-30 | 東京エレクトロン株式会社 | 処理装置 |
TWI226303B (en) * | 2002-04-18 | 2005-01-11 | Olympus Corp | Substrate carrying device |
JP2005116645A (ja) * | 2003-10-03 | 2005-04-28 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及び半導体装置の製造方法 |
JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2006232477A (ja) * | 2005-02-24 | 2006-09-07 | Fuji Photo Film Co Ltd | シート体位置決め治具及びそれを用いた描画装置 |
-
2007
- 2007-01-15 JP JP2007006321A patent/JP4753888B2/ja not_active Expired - Fee Related
-
2008
- 2008-01-14 TW TW097101385A patent/TWI421970B/zh active
- 2008-01-14 KR KR1020080004033A patent/KR100929448B1/ko active IP Right Grant
- 2008-01-15 CN CN2008100034479A patent/CN101226894B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2008172170A (ja) | 2008-07-24 |
TW200839931A (en) | 2008-10-01 |
KR20080067305A (ko) | 2008-07-18 |
KR100929448B1 (ko) | 2009-12-02 |
CN101226894A (zh) | 2008-07-23 |
TWI421970B (zh) | 2014-01-01 |
CN101226894B (zh) | 2012-07-04 |
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