JP4749133B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4749133B2
JP4749133B2 JP2005338529A JP2005338529A JP4749133B2 JP 4749133 B2 JP4749133 B2 JP 4749133B2 JP 2005338529 A JP2005338529 A JP 2005338529A JP 2005338529 A JP2005338529 A JP 2005338529A JP 4749133 B2 JP4749133 B2 JP 4749133B2
Authority
JP
Japan
Prior art keywords
film
insulating film
conductive film
conductive
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005338529A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006186330A5 (enExample
JP2006186330A (ja
Inventor
裕子 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005338529A priority Critical patent/JP4749133B2/ja
Publication of JP2006186330A publication Critical patent/JP2006186330A/ja
Publication of JP2006186330A5 publication Critical patent/JP2006186330A5/ja
Application granted granted Critical
Publication of JP4749133B2 publication Critical patent/JP4749133B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005338529A 2004-11-30 2005-11-24 半導体装置の作製方法 Expired - Fee Related JP4749133B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005338529A JP4749133B2 (ja) 2004-11-30 2005-11-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004347738 2004-11-30
JP2004347738 2004-11-30
JP2005338529A JP4749133B2 (ja) 2004-11-30 2005-11-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006186330A JP2006186330A (ja) 2006-07-13
JP2006186330A5 JP2006186330A5 (enExample) 2009-01-08
JP4749133B2 true JP4749133B2 (ja) 2011-08-17

Family

ID=36739170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005338529A Expired - Fee Related JP4749133B2 (ja) 2004-11-30 2005-11-24 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4749133B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
US9730333B2 (en) 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
JP5136431B2 (ja) * 2009-01-15 2013-02-06 株式会社デンソー 半導体装置の製造方法
JP5173863B2 (ja) * 2009-01-20 2013-04-03 パナソニック株式会社 半導体装置およびその製造方法
JP5740389B2 (ja) * 2009-03-27 2015-06-24 アプライド・ナノテック・ホールディングス・インコーポレーテッド 光焼結及び／またはレーザー焼結を強化するためのバッファ層
JP5212506B2 (ja) * 2011-02-28 2013-06-19 株式会社デンソー 半導体装置の製造方法
TW201419315A (zh) 2012-07-09 2014-05-16 Applied Nanotech Holdings Inc 微米尺寸銅粒子的光燒結法
US11258078B2 (en) 2019-08-09 2022-02-22 Hamilton Sundstrand Corporation Conductor assembly

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441204A (en) * 1987-08-07 1989-02-13 Canon Kk Energy storage device
JPH07130734A (ja) * 1993-10-29 1995-05-19 Hoya Corp レーザ成膜配線法
JPH10233446A (ja) * 1997-02-19 1998-09-02 Sony Corp 配線形成方法
JP4653867B2 (ja) * 1999-06-30 2011-03-16 エーユー オプトロニクス コーポレイション 電子部品の欠陥修復方法
JP3840886B2 (ja) * 2000-09-07 2006-11-01 日立電線株式会社 層間絶縁膜の製造方法
JP2003100757A (ja) * 2001-09-27 2003-04-04 Toshiba Corp 半導体装置およびその製造方法
JP4042460B2 (ja) * 2002-04-22 2008-02-06 セイコーエプソン株式会社 製膜方法及びデバイス及び電子機器並びにデバイスの製造方法
JP4741192B2 (ja) * 2003-01-17 2011-08-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004281657A (ja) * 2003-03-14 2004-10-07 Seiko Epson Corp 導電層の形成方法

Also Published As

Publication number Publication date
JP2006186330A (ja) 2006-07-13

Similar Documents

Publication Publication Date Title
US7732349B2 (en) Manufacturing method of insulating film and semiconductor device
US7687326B2 (en) Semiconductor device and manufacturing method thereof
US7615488B2 (en) Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television device
US7985677B2 (en) Method of manufacturing semiconductor device
US7635889B2 (en) Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7642038B2 (en) Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
CN100533808C (zh) 显示器件及其制造方法以及电视设备
US8912546B2 (en) Thin film transistor and display device
US8158517B2 (en) Method for manufacturing wiring substrate, thin film transistor, display device and television device
US8102005B2 (en) Wiring substrate, semiconductor device and manufacturing method thereof
US20060113894A1 (en) Semiconductor device, display device and method for manufacturing thereof, and television device
JP4777078B2 (ja) 半導体装置の作製方法
CN1862848B (zh) 制造显示器的方法
US20050196710A1 (en) Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
KR101114897B1 (ko) 반도체 장치, 텔레비전 세트 및 상기 제조 방법
JP4700484B2 (ja) 半導体装置の作製方法
JP4969041B2 (ja) 表示装置の作製方法
JP5110785B2 (ja) 表示装置の作製方法
JP4854994B2 (ja) 配線基板の作製方法及び薄膜トランジスタの作製方法
JP5057652B2 (ja) 薄膜トランジスタの作製方法
JP4749133B2 (ja) 半導体装置の作製方法
JP2005244203A (ja) 半導体装置及びテレビジョン装置、並びにそれらの作製方法
JP5116212B2 (ja) 薄膜トランジスタの作製方法
JP2005286320A (ja) パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置
JP4879496B2 (ja) パターン形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081118

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110307

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110510

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110517

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140527

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140527

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees