JP4748581B2 - 真空処理装置及び真空処理方法 - Google Patents
真空処理装置及び真空処理方法 Download PDFInfo
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- JP4748581B2 JP4748581B2 JP2005365749A JP2005365749A JP4748581B2 JP 4748581 B2 JP4748581 B2 JP 4748581B2 JP 2005365749 A JP2005365749 A JP 2005365749A JP 2005365749 A JP2005365749 A JP 2005365749A JP 4748581 B2 JP4748581 B2 JP 4748581B2
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- JP
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- Prior art keywords
- vacuum processing
- gas
- processing tank
- vacuum
- wafer
- Prior art date
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- 238000012545 processing Methods 0.000 title claims description 162
- 238000003672 processing method Methods 0.000 title claims description 10
- 239000007789 gas Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 31
- 229910001593 boehmite Inorganic materials 0.000 claims description 18
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000009489 vacuum treatment Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 57
- 150000003254 radicals Chemical class 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 230000009849 deactivation Effects 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 230000002265 prevention Effects 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- -1 hydrogen radicals Chemical class 0.000 description 8
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 229910017701 NHxFy Inorganic materials 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 4
- WMWXXXSCZVGQAR-UHFFFAOYSA-N dialuminum;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3] WMWXXXSCZVGQAR-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
H*+NF3→NHxFy(NH4FH、NH4FHF等)
NHxFy+SiO2→(NH4)2SiF6+H2O↑
(NH4)2SiF6→NH3↑+HF↑+SiF4↑
2 反応室
3 ウェーハ支持台
4 プラズマ源
5 導入配管
6 第1の処理ガス導入部
7 第2の処理ガス導入部
10 真空処理装置
11 被膜(ベーマイト膜)
12 下地膜(アルミナ膜)
W ウェーハ
Wa 自然酸化膜
Wb アンモニア錯体
Claims (4)
- ベーマイト膜で被覆された内壁面を有する真空処理槽と、
第1の処理ガスとしてラジカル状態の水素ガス及びラジカル状態の窒素ガスを前記真空処理槽の内部に導入する第1の処理ガス導入部と、
前記第1の処理ガスと反応する第2の処理ガスを前記真空処理槽の内部に導入する第2の処理ガス導入部と、
前記真空処理槽の内部に設置され複数枚の被処理基板を支持する基板支持台とを備えたことを特徴とする真空処理装置。 - 真空処理槽の内部にラジカル状態の水素ガス及びラジカル状態の窒素ガスを導入して被処理基板を処理する真空処理方法であって、
前記真空処理槽の内壁面にベーマイト膜を形成した後、前記真空処理槽の内部に前記ラジカル状態の水素ガス及び前記ラジカル状態の窒素ガスを含む第1の処理ガスと、前記第1の処理ガスと反応する第2の処理ガスとを導入して被処理基板をエッチング処理することを特徴とする真空処理方法。 - 前記真空処理槽の内壁面にベーマイト膜を形成する工程が、当該真空処理槽の洗浄処理の後に行われることを特徴とする請求項2に記載の真空処理方法。
- 前記被処理基板のエッチング処理後、前記被処理基板を加熱処理する工程を有することを特徴とする請求項2に記載の真空処理方法。
Priority Applications (1)
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JP2005365749A JP4748581B2 (ja) | 2005-12-20 | 2005-12-20 | 真空処理装置及び真空処理方法 |
Applications Claiming Priority (1)
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JP2005365749A JP4748581B2 (ja) | 2005-12-20 | 2005-12-20 | 真空処理装置及び真空処理方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007173337A JP2007173337A (ja) | 2007-07-05 |
JP4748581B2 true JP4748581B2 (ja) | 2011-08-17 |
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JP2005365749A Active JP4748581B2 (ja) | 2005-12-20 | 2005-12-20 | 真空処理装置及び真空処理方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7695567B2 (en) * | 2006-02-10 | 2010-04-13 | Applied Materials, Inc. | Water vapor passivation of a wall facing a plasma |
JP5703000B2 (ja) * | 2010-12-01 | 2015-04-15 | 株式会社アルバック | ラジカルクリーニング方法 |
JP6997016B2 (ja) * | 2018-03-09 | 2022-01-17 | 株式会社アルバック | 真空処理装置、真空処理装置の製造方法、および、真空処理装置用の内部冶具 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05114582A (ja) * | 1991-10-22 | 1993-05-07 | Tokyo Electron Yamanashi Kk | 真空処理装置 |
JPH10326771A (ja) * | 1997-05-23 | 1998-12-08 | Fujitsu Ltd | 水素プラズマダウンストリーム処理装置及び水素プラズマダウンストリーム処理方法 |
JPH11219937A (ja) * | 1998-01-30 | 1999-08-10 | Toshiba Corp | プロセス装置 |
JP4495472B2 (ja) * | 2004-01-13 | 2010-07-07 | 三星電子株式会社 | エッチング方法 |
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- 2005-12-20 JP JP2005365749A patent/JP4748581B2/ja active Active
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