JP4745635B2 - GaN層によるSiC表面の保護 - Google Patents
GaN層によるSiC表面の保護 Download PDFInfo
- Publication number
- JP4745635B2 JP4745635B2 JP2004274053A JP2004274053A JP4745635B2 JP 4745635 B2 JP4745635 B2 JP 4745635B2 JP 2004274053 A JP2004274053 A JP 2004274053A JP 2004274053 A JP2004274053 A JP 2004274053A JP 4745635 B2 JP4745635 B2 JP 4745635B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- protective layer
- epitaxy
- layer
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (5)
- 保護される基板の表面上に少なくとも二つの単一層に等しい厚みを有する、窒化ガリウムから成る一時的な保護層の沈着を含むことを特徴とする、SiC基板の表面の保護方法。
- 保護層の沈着が、ストランスキー-クラスタノフエピタクシーによって実施され、エピタクシーは島の出現の前に停止されることを特徴とする、請求項1に記載の保護方法。
- 窒化ガリウムの保護層が、基板の表面上にガリウム層を沈着し、その後形成されたガリウム層を窒化することによって得られることを特徴とする、請求項1に記載の方法。
- 窒化ガリウムから形成された一時的な保護層を酸化した後に、前記保護層を真空蒸発によって除去することを特徴とする、請求項2または3に記載の方法。
- 少なくとも一方の表面が、二つの単一層の厚みのGaNからなる一時的な保護層によって被覆されたSiC基板を含むことを特徴とする、「エピレディ」基板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0350585A FR2860101B1 (fr) | 2003-09-22 | 2003-09-22 | Protection de la surface du sic par une couche de gan |
FR0350585 | 2003-09-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005097104A JP2005097104A (ja) | 2005-04-14 |
JP4745635B2 true JP4745635B2 (ja) | 2011-08-10 |
Family
ID=34179009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004274053A Expired - Fee Related JP4745635B2 (ja) | 2003-09-22 | 2004-09-21 | GaN層によるSiC表面の保護 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7354619B2 (ja) |
EP (1) | EP1517368B1 (ja) |
JP (1) | JP4745635B2 (ja) |
AT (1) | ATE532213T1 (ja) |
FR (1) | FR2860101B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5193019B2 (ja) * | 2008-12-25 | 2013-05-08 | 新日本無線株式会社 | 半導体装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3322740B2 (ja) * | 1993-12-21 | 2002-09-09 | 三菱マテリアル株式会社 | 半導体基板およびその製造方法 |
JP3508356B2 (ja) * | 1995-12-25 | 2004-03-22 | 松下電器産業株式会社 | 半導体結晶成長方法及び半導体薄膜 |
GB2313606A (en) * | 1996-06-01 | 1997-12-03 | Sharp Kk | Forming a compound semiconductor film |
GB9916549D0 (en) * | 1999-07-14 | 1999-09-15 | Arima Optoelectronics Corp | Epitaxial growth method of semiconductors on highly lattice mismatched substrates using the buffer layer with solid-liquid phase transition |
SE9903242D0 (sv) * | 1999-09-13 | 1999-09-13 | Acreo Ab | A semiconductor device |
-
2003
- 2003-09-22 FR FR0350585A patent/FR2860101B1/fr not_active Expired - Fee Related
-
2004
- 2004-09-20 US US10/944,053 patent/US7354619B2/en not_active Expired - Fee Related
- 2004-09-20 AT AT04104539T patent/ATE532213T1/de active
- 2004-09-20 EP EP04104539A patent/EP1517368B1/fr not_active Not-in-force
- 2004-09-21 JP JP2004274053A patent/JP4745635B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ATE532213T1 (de) | 2011-11-15 |
EP1517368A3 (fr) | 2006-01-25 |
FR2860101B1 (fr) | 2005-10-21 |
FR2860101A1 (fr) | 2005-03-25 |
JP2005097104A (ja) | 2005-04-14 |
US7354619B2 (en) | 2008-04-08 |
EP1517368B1 (fr) | 2011-11-02 |
EP1517368A2 (fr) | 2005-03-23 |
US20050202284A1 (en) | 2005-09-15 |
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