JP4743061B2 - 有機半導体の離散的領域を有する半導体膜、及びその製造方法 - Google Patents
有機半導体の離散的領域を有する半導体膜、及びその製造方法 Download PDFInfo
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- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
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- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electroluminescent Light Sources (AREA)
Description
4・・・絶縁層
10・・・薄膜トランジスタ
11・・・基板
13・・・ソース電極
14・・・ドレイン電極
Claims (13)
- (i)第1の有機半導体を含む溶液を、基板の表面にインクジェット印刷法を用いて付与し、第2の有機半導体の前駆体を含む溶液を、前記基板の表面に付与し、前記基板の表面において、前記第1の有機半導体を含む溶液と前記第2の有機半導体の前駆体を含む溶液とを混合させる工程と、
(ii)塗布された前記前駆体を加熱し、前記第2の有機半導体がマトリクスを形成する前に、又はマトリクスの形成と同時に前記第2の有機半導体に変換する工程と、
(iii)前記溶液を乾燥させ、前記離散的領域同士を電気的に接続する前記マトリクス中に前記第1の有機半導体の半導体膜を形成する工程と、を有し、
前記第1及び第2の有機半導体は、同一の導電型であり、
前記離散的領域における電荷担体移動度は前記マトリクスにおける電荷担体移動度より高く、
前記第1の有機半導体を含む溶液の溶媒は、前記第2の有機半導体の前駆体を溶解できない溶媒であり、かつ前記第2の有機半導体の前駆体を含む溶液の溶媒は、前記第1の有機半導体を溶解できない溶媒であることを特徴とする半導体膜の製造方法。 - 請求項1に記載の半導体膜の製造方法において、
前記第1の有機半導体の前記離散的領域の、前記第2の有機半導体の前記マトリクスに対する体積比は25:75〜95:5であることを特徴とする半導体膜の製造方法。 - 請求項1または2に記載の半導体膜の製造方法において、
前記第1の有機半導体の前記離散的領域は、結晶であることを特徴とする半導体膜の製造方法。 - 請求項3に記載の半導体膜の製造方法において、
前記第1の有機半導体の前記結晶の最大寸法の平均は1〜10μmであることを特徴とする半導体膜の製造方法。 - 請求項1乃至4の何れか1項に記載の半導体膜の製造方法において、
前記第1及び第2の有機半導体の前記導電型は共にp型であることを特徴とする半導体膜の製造方法。 - 請求項5に記載の半導体膜の製造方法において、
前記第1の有機半導体は、ポリチオフェン、ペンタセン、ヘキサベンゾコロネン、ジベンゾ・テトラチアフルバレン(DB−TTF)、又はジチオフェン・テトラチアフルバレン(DT−TTF)であることを特徴とする半導体膜の製造方法。 - 請求項6に記載の半導体膜の製造方法において、
前記第1の有機半導体は、ジヘキシル・クォーターチオフェン(QT)であることを特徴とする半導体膜の製造方法。 - 請求項5乃至7の何れか1項に記載の半導体膜の製造方法において、
前記第2の有機半導体は、ポリアリルアミン、ポリフルオレン、チオフェン・フルオレン共重合体、又はポリチオフェンであることを特徴とする半導体膜の製造方法。 - 請求項8に記載の半導体膜の製造方法において、
前記第2の有機半導体は、ポリ(3−ヘキシルチオフェン)(P3HT)であることを特徴とする半導体膜の製造方法。 - 請求項1乃至9の何れか1項に記載の方法によって製造された半導体膜を有する薄膜トランジスタ。
- 請求項10に記載の薄膜トランジスタにおいて、
前記半導体膜はソース電極及びドレイン電極と電気的に接続されるトランジスタチャネルであることを特徴とする薄膜トランジスタ。 - 請求項1乃至9の何れか1項に記載の方法によって製造された半導体膜を有する有機発光ダイオード。
- 請求項10又は11の何れか1項に記載の薄膜トランジスタ又は請求項12に記載の有機発光ダイオードを有する電気製品。
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GB0519184.6 | 2005-09-20 | ||
GB0519184A GB2430546A (en) | 2005-09-20 | 2005-09-20 | A semiconductor film comprising domains of an organic semiconductor and a method of its fabrication |
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JP2007110105A JP2007110105A (ja) | 2007-04-26 |
JP4743061B2 true JP4743061B2 (ja) | 2011-08-10 |
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Country Status (5)
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US (1) | US7846764B2 (ja) |
JP (1) | JP4743061B2 (ja) |
KR (1) | KR101242631B1 (ja) |
CN (1) | CN1937275B (ja) |
GB (1) | GB2430546A (ja) |
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GB0612929D0 (en) * | 2006-06-29 | 2006-08-09 | Univ Cambridge Tech | High-performance organic field-effect transistors based on dilute, crystalline-crystalline polymer blends and block copolymers |
JP5196215B2 (ja) * | 2006-09-29 | 2013-05-15 | ソニー株式会社 | 半導体装置 |
JP5192781B2 (ja) * | 2007-11-12 | 2013-05-08 | 山本化成株式会社 | 有機トランジスタ |
JP5480510B2 (ja) | 2008-03-31 | 2014-04-23 | 住友化学株式会社 | 有機半導体組成物、並びに有機薄膜及びこれを備える有機薄膜素子 |
JP5471000B2 (ja) * | 2008-04-24 | 2014-04-16 | 東レ株式会社 | 電界効果型トランジスタ |
WO2009158201A1 (en) * | 2008-06-27 | 2009-12-30 | 3M Innovative Properties Company | Methods op fabricating crystalline organic semiconductive layers |
KR101004996B1 (ko) * | 2008-09-24 | 2011-01-04 | 포항공과대학교 산학협력단 | 2전극 구조의 유기 박막 트랜지스터 및 이의 구동방법 |
JP5651961B2 (ja) * | 2010-02-03 | 2015-01-14 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、ならびに電子機器 |
WO2012156500A1 (en) * | 2011-05-18 | 2012-11-22 | Université Libre de Bruxelles | Semiconducting compound for gas sensing |
JP5494629B2 (ja) * | 2011-11-29 | 2014-05-21 | ソニー株式会社 | 半導体装置 |
US9293711B2 (en) * | 2012-08-09 | 2016-03-22 | Polyera Corporation | Organic semiconductor formulations |
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KR101242631B1 (ko) | 2013-03-20 |
JP2007110105A (ja) | 2007-04-26 |
GB2430546A (en) | 2007-03-28 |
CN1937275B (zh) | 2011-01-19 |
CN1937275A (zh) | 2007-03-28 |
GB0519184D0 (en) | 2005-10-26 |
US20080035915A1 (en) | 2008-02-14 |
US7846764B2 (en) | 2010-12-07 |
KR20070032908A (ko) | 2007-03-23 |
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