JP4739510B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4739510B2
JP4739510B2 JP2000382760A JP2000382760A JP4739510B2 JP 4739510 B2 JP4739510 B2 JP 4739510B2 JP 2000382760 A JP2000382760 A JP 2000382760A JP 2000382760 A JP2000382760 A JP 2000382760A JP 4739510 B2 JP4739510 B2 JP 4739510B2
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Prior art keywords
insulating film
film
forming
light shielding
gate
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JP2000382760A
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English (en)
Japanese (ja)
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JP2002182244A (ja
JP2002182244A5 (enrdf_load_stackoverflow
Inventor
達也 荒尾
宗広 浅見
千穂 小久保
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000382760A priority Critical patent/JP4739510B2/ja
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Publication of JP2002182244A5 publication Critical patent/JP2002182244A5/ja
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Publication of JP4739510B2 publication Critical patent/JP4739510B2/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2000382760A 2000-12-15 2000-12-15 半導体装置およびその作製方法 Expired - Lifetime JP4739510B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000382760A JP4739510B2 (ja) 2000-12-15 2000-12-15 半導体装置およびその作製方法

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Application Number Priority Date Filing Date Title
JP2000382760A JP4739510B2 (ja) 2000-12-15 2000-12-15 半導体装置およびその作製方法

Publications (3)

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JP2002182244A JP2002182244A (ja) 2002-06-26
JP2002182244A5 JP2002182244A5 (enrdf_load_stackoverflow) 2007-12-20
JP4739510B2 true JP4739510B2 (ja) 2011-08-03

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JP2000382760A Expired - Lifetime JP4739510B2 (ja) 2000-12-15 2000-12-15 半導体装置およびその作製方法

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JP (1) JP4739510B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
US7888702B2 (en) 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
JP4817946B2 (ja) * 2005-04-15 2011-11-16 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101230307B1 (ko) 2006-02-17 2013-02-06 삼성디스플레이 주식회사 액정 표시 장치
JP4967631B2 (ja) 2006-12-07 2012-07-04 三菱電機株式会社 表示装置
TWI634642B (zh) * 2009-08-07 2018-09-01 半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2011024911A1 (ja) * 2009-08-28 2011-03-03 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
US8637864B2 (en) * 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP6417125B2 (ja) * 2014-06-25 2018-10-31 株式会社ジャパンディスプレイ 半導体装置
EP4053519B1 (en) * 2019-10-30 2024-07-17 Sony Semiconductor Solutions Corporation Light receiving element, ranging module, and electronic device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428622A (en) * 1987-07-24 1989-01-31 Hitachi Ltd Liquid crystal display device
JP2727562B2 (ja) * 1988-04-27 1998-03-11 ソニー株式会社 表示装置
JPH0244317A (ja) * 1988-08-05 1990-02-14 Hitachi Ltd 補助容量を有する液晶表示装置
JP2924506B2 (ja) * 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP3307144B2 (ja) * 1995-02-28 2002-07-24 ソニー株式会社 表示装置
JP3904646B2 (ja) * 1996-02-29 2007-04-11 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JPH1010581A (ja) * 1996-06-25 1998-01-16 Semiconductor Energy Lab Co Ltd 表示装置
JP4583540B2 (ja) * 1999-03-04 2010-11-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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Publication number Publication date
JP2002182244A (ja) 2002-06-26

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