JP4739510B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
- Publication number
- JP4739510B2 JP4739510B2 JP2000382760A JP2000382760A JP4739510B2 JP 4739510 B2 JP4739510 B2 JP 4739510B2 JP 2000382760 A JP2000382760 A JP 2000382760A JP 2000382760 A JP2000382760 A JP 2000382760A JP 4739510 B2 JP4739510 B2 JP 4739510B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- forming
- light shielding
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
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- -1 tungsten nitride Chemical class 0.000 description 2
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
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- 229910001080 W alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2000382760A JP4739510B2 (ja) | 2000-12-15 | 2000-12-15 | 半導体装置およびその作製方法 |
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JP2000382760A JP4739510B2 (ja) | 2000-12-15 | 2000-12-15 | 半導体装置およびその作製方法 |
Publications (3)
Publication Number | Publication Date |
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JP2002182244A JP2002182244A (ja) | 2002-06-26 |
JP2002182244A5 JP2002182244A5 (enrdf_load_stackoverflow) | 2007-12-20 |
JP4739510B2 true JP4739510B2 (ja) | 2011-08-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2000382760A Expired - Lifetime JP4739510B2 (ja) | 2000-12-15 | 2000-12-15 | 半導体装置およびその作製方法 |
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JP (1) | JP4739510B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6897477B2 (en) | 2001-06-01 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
US7888702B2 (en) | 2005-04-15 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the display device |
JP4817946B2 (ja) * | 2005-04-15 | 2011-11-16 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR101230307B1 (ko) | 2006-02-17 | 2013-02-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP4967631B2 (ja) | 2006-12-07 | 2012-07-04 | 三菱電機株式会社 | 表示装置 |
TWI634642B (zh) * | 2009-08-07 | 2018-09-01 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
WO2011024911A1 (ja) * | 2009-08-28 | 2011-03-03 | シャープ株式会社 | 半導体装置、アクティブマトリクス基板、及び表示装置 |
US8637864B2 (en) * | 2011-10-13 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP6417125B2 (ja) * | 2014-06-25 | 2018-10-31 | 株式会社ジャパンディスプレイ | 半導体装置 |
EP4053519B1 (en) * | 2019-10-30 | 2024-07-17 | Sony Semiconductor Solutions Corporation | Light receiving element, ranging module, and electronic device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6428622A (en) * | 1987-07-24 | 1989-01-31 | Hitachi Ltd | Liquid crystal display device |
JP2727562B2 (ja) * | 1988-04-27 | 1998-03-11 | ソニー株式会社 | 表示装置 |
JPH0244317A (ja) * | 1988-08-05 | 1990-02-14 | Hitachi Ltd | 補助容量を有する液晶表示装置 |
JP2924506B2 (ja) * | 1992-10-27 | 1999-07-26 | 日本電気株式会社 | アクティブマトリックス型液晶表示装置の画素構造 |
JP3307144B2 (ja) * | 1995-02-28 | 2002-07-24 | ソニー株式会社 | 表示装置 |
JP3904646B2 (ja) * | 1996-02-29 | 2007-04-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JPH1010581A (ja) * | 1996-06-25 | 1998-01-16 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP4583540B2 (ja) * | 1999-03-04 | 2010-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
-
2000
- 2000-12-15 JP JP2000382760A patent/JP4739510B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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JP2002182244A (ja) | 2002-06-26 |
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