JP4738097B2 - 液晶表示装置およびその製造方法 - Google Patents
液晶表示装置およびその製造方法 Download PDFInfo
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- JP4738097B2 JP4738097B2 JP2005239043A JP2005239043A JP4738097B2 JP 4738097 B2 JP4738097 B2 JP 4738097B2 JP 2005239043 A JP2005239043 A JP 2005239043A JP 2005239043 A JP2005239043 A JP 2005239043A JP 4738097 B2 JP4738097 B2 JP 4738097B2
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 364
- 238000000034 method Methods 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 25
- 238000007789 sealing Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 117
- 239000010408 film Substances 0.000 description 58
- 239000010410 layer Substances 0.000 description 47
- 239000010409 thin film Substances 0.000 description 43
- 238000005498 polishing Methods 0.000 description 30
- 239000007788 liquid Substances 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 235000019353 potassium silicate Nutrition 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Surface Treatment Of Glass (AREA)
- Joining Of Glass To Other Materials (AREA)
Description
2 第1の基板としてのアレイ基板
3 絶縁基板としてのガラス基板
6 画素
41 第2の基板としての対向基板
42 絶縁基板としてのガラス基板
43 カラーフィルタ層
44 対向電極
46 液晶としての液晶層
52 第1の基板としての大型アレイ基板
54 第2の基板としての大型対向基板
Claims (6)
- 第1の基板を作製し、
この第1の基板とは異なる温度で前記第1の基板と同じ厚さの第2の基板を作製し、
前記第1の基板の一主面と前記第2の基板の一主面とを対向させて、これら第1の基板と第2の基板と貼り合せ、
これら貼り合わされた第1の基板の他主面および前記第2の基板の他主面のそれぞれを化学的な処理で同時に薄くし、
これら第1の基板の一主面と前記第2の基板の一主面との間に液晶を注入して封止する
ことを特徴とする液晶表示装置の製造方法。 - 第2の基板より高い温度で第1の基板を作製する
ことを特徴とする請求項1記載の液晶表示装置の製造方法。 - 第1の基板は、絶縁基板上に複数の画素が設けられ500℃以上600℃以下の温度で作製されたアレイ基板で、
第2の基板は、絶縁基板上にカラーフィルタ層および対向電極が積層されて設けられ240℃以下の温度で作製された対向基板である
ことを特徴とする請求項1または2記載の液晶表示装置の製造方法。 - 第1の基板は、複数個のアレイ基板が連結されて構成され、
第2の基板は、前記アレイ基板に対応して複数個の対向基板が連結されて構成され、
前記第1の基板の他主面および前記第2の基板の他主面のそれぞれを同時に薄くしてから、これら第1の基板および第2の基板を複数個に分割し、
これら複数個に分割された前記第1の基板の一主面と前記第2の基板の一主面との間に液晶を注入して封止する
ことを特徴とした請求項1ないし3いずれか記載の液晶表示装置の製造方法。 - 第1の基板は、複数個のアレイ基板が縦方向および横方向に向けて連結されて構成され、
第2の基板は、前記アレイ基板に対応して複数個の対向基板が縦方向および横方向に向けて連結されて構成され、
前記第1の基板の他主面および前記第2の基板の他主面のそれぞれを同時に薄くしてから、これら第1の基板および第2の基板を縦方向および横方向のいずれか一方に沿って複数列に分割し、
これら複数列に分割された前記第1の基板の一主面と前記第2の基板の一主面との間に液晶を注入して封止し、
これら液晶が封止された前記第1の基板および第2の基板のそれぞれを縦方向および横方向のいずれか他方に沿って複数個に分割する
ことを特徴とした請求項1ないし3いずれか記載の液晶表示装置の製造方法。 - 第1の基板と、
この第1の基板とは異なる温度で作製されこの第1の基板の一主面に一主面を対向させて貼り合わされこの第1の基板の他主面と同時に他主面が化学的な処理で薄くされた第2の基板と、
これら第1の基板の一主面と前記第2の基板の一主面との間に注入されて封止された液晶と
を具備した液晶表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005239043A JP4738097B2 (ja) | 2005-08-19 | 2005-08-19 | 液晶表示装置およびその製造方法 |
US11/419,861 US20070040985A1 (en) | 2005-08-19 | 2006-05-23 | Liquid crystal display device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005239043A JP4738097B2 (ja) | 2005-08-19 | 2005-08-19 | 液晶表示装置およびその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007052367A JP2007052367A (ja) | 2007-03-01 |
JP2007052367A5 JP2007052367A5 (ja) | 2008-09-04 |
JP4738097B2 true JP4738097B2 (ja) | 2011-08-03 |
Family
ID=37767037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005239043A Active JP4738097B2 (ja) | 2005-08-19 | 2005-08-19 | 液晶表示装置およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070040985A1 (ja) |
JP (1) | JP4738097B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100091233A1 (en) * | 2007-04-13 | 2010-04-15 | Sharp Kabushiki Kaisha | Liquid crystal display panel and its manufacturing method |
US8112304B2 (en) * | 2008-08-15 | 2012-02-07 | Raytheon Company | Method of risk management across a mission support network |
WO2013183216A1 (ja) * | 2012-06-04 | 2013-12-12 | シャープ株式会社 | 表示パネル及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6020947A (en) * | 1996-11-06 | 2000-02-01 | Sharp Kabushiki Kaisha | Liquid crystal devices |
JP4118485B2 (ja) * | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW574753B (en) * | 2001-04-13 | 2004-02-01 | Sony Corp | Manufacturing method of thin film apparatus and semiconductor device |
JP2003216068A (ja) * | 2002-01-28 | 2003-07-30 | Matsushita Electric Ind Co Ltd | 表示装置と表示装置用基板及びその製造方法 |
JP4186502B2 (ja) * | 2002-04-22 | 2008-11-26 | ソニー株式会社 | 薄膜デバイスの製造方法、薄膜デバイスおよび表示装置 |
JP4104489B2 (ja) * | 2002-05-17 | 2008-06-18 | 東芝松下ディスプレイテクノロジー株式会社 | 表示装置及びその製造方法 |
KR100710162B1 (ko) * | 2002-11-28 | 2007-04-20 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 실 패턴 형성방법 |
JP4251622B2 (ja) * | 2003-06-20 | 2009-04-08 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置 |
JP2005077945A (ja) * | 2003-09-02 | 2005-03-24 | Toshiba Matsushita Display Technology Co Ltd | 表示装置の製造方法 |
-
2005
- 2005-08-19 JP JP2005239043A patent/JP4738097B2/ja active Active
-
2006
- 2006-05-23 US US11/419,861 patent/US20070040985A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070040985A1 (en) | 2007-02-22 |
JP2007052367A (ja) | 2007-03-01 |
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