WO2016161700A1 - 一种薄膜晶体管阵列基板及其制造方法 - Google Patents

一种薄膜晶体管阵列基板及其制造方法 Download PDF

Info

Publication number
WO2016161700A1
WO2016161700A1 PCT/CN2015/081163 CN2015081163W WO2016161700A1 WO 2016161700 A1 WO2016161700 A1 WO 2016161700A1 CN 2015081163 W CN2015081163 W CN 2015081163W WO 2016161700 A1 WO2016161700 A1 WO 2016161700A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
bottom gate
film transistor
thin film
array substrate
Prior art date
Application number
PCT/CN2015/081163
Other languages
English (en)
French (fr)
Inventor
徐向阳
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US14/888,416 priority Critical patent/US9651843B2/en
Publication of WO2016161700A1 publication Critical patent/WO2016161700A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor

Definitions

  • the present invention relates to the field of display technology, and in particular to a thin film transistor array substrate capable of preventing a threshold voltage ( Vth ) from drifting in the case of a light negative bias (NBIS) and a method of fabricating the same.
  • Vth threshold voltage
  • NBIS light negative bias
  • LCDs liquid crystal displays
  • the liquid crystal display usually includes a liquid crystal display panel and a backlight module disposed opposite to each other, and the backlight module provides a display light source to the liquid crystal display panel.
  • the liquid crystal display panel generally includes a thin film transistor array substrate, a color filter substrate, and a liquid crystal layer interposed between the two substrates, wherein the liquid crystal molecules in the liquid crystal layer are controlled to be twisted by applying voltages to the two substrates respectively. The passage or non-pass of light is achieved to achieve the purpose of display.
  • the thin film transistor array substrate includes a plurality of thin film transistors (TFTs) formed in an array on a substrate.
  • TFTs thin film transistors
  • a-Si amorphous silicon
  • a-IGZO amorphous indium gallium zinc oxide
  • a-IGZO TFT has gradually become a preferred switching element in active matrix displays due to its advantages such as visible light transparency, high on/off ratio, and low threshold voltage ( Vth ).
  • Vth threshold voltage
  • the threshold voltage of the a-IGZO TFT is likely to drift in the case of the light negative bias (NBIS), it is difficult to mass-produce the a-IGZO TFT at present.
  • NBIS light negative bias
  • a thin film transistor array substrate including: a bottom gate of a thin film transistor on a substrate; a bottom gate insulating layer on the substrate and covering the bottom gate; a semiconductor oxide layer on the bottom gate insulating layer; an etch stop layer on the bottom gate insulating layer covering the semiconductor oxide layer, the etch stop layer including a first via hole
  • the first via exposes a portion of the semiconductor oxide layer; a drain and a source of the thin film transistor on the etch barrier, the drain contacts the first through via a semiconductor oxide layer; an insulating protective layer covering the drain and the source on the etch stop layer; the insulating protective layer, the etch stop layer, and the bottom gate insulating layer a second via hole through which the portion of the bottom gate is exposed; a top gate on the insulating protective layer, the top gate contacting the second through via Bottom gate.
  • the semiconductor oxide layer comprises amorphous indium gallium zinc oxide.
  • the bottom gate includes at least one metal material.
  • top gate and the pixel electrode are made of the same material.
  • the pixel electrode includes indium tin oxide.
  • a method of fabricating a thin film transistor array substrate includes: forming a bottom gate of a thin film transistor on a substrate; forming a bottom gate covering the bottom gate on the substrate An insulating layer; forming a semiconductor oxide layer on the bottom gate insulating layer; forming an etch barrier layer covering the semiconductor oxide layer on the bottom gate insulating layer; forming in the etch barrier layer a first via hole such that the first via hole exposes a portion of the semiconductor oxide layer; and a drain and a source of the thin film transistor are formed on the etch barrier layer to pass the drain
  • the first via contacts the semiconductor oxide layer; forming an insulating protective layer covering the drain and the source on the etch barrier; the insulating protective layer, the etch barrier Forming a second via hole in the layer and the bottom gate insulating layer to expose the second via hole to a portion of the bottom gate; forming a top gate on the insulating protective layer to make the top a gate contacting the bottom gate through the second via
  • the semiconductor oxide layer is formed using an amorphous indium gallium zinc oxide material.
  • the bottom gate is formed using at least one metal material.
  • top gate and the pixel electrode are simultaneously formed using a transparent conductive material.
  • top gate and the pixel electrode are simultaneously formed using an indium tin oxide material.
  • the invention has the beneficial effects that in the case of negative light bias, the thin film transistor formed on the substrate can prevent the threshold voltage from drifting, thereby improving the reliability of the thin film transistor and thereby improving the display quality of the liquid crystal display panel.
  • FIG. 1 shows a schematic side view of a liquid crystal display panel in accordance with an embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing a thin film transistor array substrate in accordance with an embodiment of the present invention
  • FIG. 3 shows a top plan view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
  • FIG. 1 shows a schematic side view of a liquid crystal display panel in accordance with an embodiment of the present invention.
  • a liquid crystal display panel includes a color filter substrate 100, a thin film transistor array substrate 200, and a liquid crystal layer 300 interposed between the color filter substrate 100 and the thin film transistor array substrate 200.
  • the liquid crystal layer 300 includes a plurality of liquid crystal molecules.
  • the color filter substrate 100 disposed opposite to the thin film transistor array substrate 200 is also referred to as a CF (Color Filter) substrate, which generally includes a substrate (such as a transparent glass substrate, a PET substrate), and a black matrix pattern, color filter disposed on the substrate. Layer (such as Red (R), green (G), and blue (B) filter patterns, and alignment layers. Since the color filter substrate 100 according to the embodiment of the present invention is substantially the same as the color filter substrate in the conventional liquid crystal display panel, the specific structure thereof can be referred to the description in the related prior art document, and here, No longer.
  • FIG. 2 shows a schematic cross-sectional view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
  • FIG. 3 shows a top plan view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
  • a thin film transistor array substrate 200 which is also referred to as a TFT (Thin Film Transistor) substrate, includes a substrate 210, a bottom gate 220, a bottom gate insulating layer 230, a semiconductor oxide layer 240, and an engraved layer.
  • the substrate 210 may be, for example, a transparent glass substrate or a PET substrate, but the invention is not limited thereto.
  • the bottom gate 220 is patternedly formed on the substrate 210, wherein the bottom gate 220 is patterned on the substrate 210, and is also patterned on the substrate 210 for receiving scanning.
  • the bottom gate 220 and the scan line 292 are both formed using at least one metal material, for example, one or more of aluminum, molybdenum, copper, and the like.
  • the bottom gate 220 comprises a metal material which is the same as the metal material included in the scan line, so that it is convenient to form both at the same time.
  • the bottom gate insulating layer 230 is formed on the substrate 210, and the bottom gate insulating layer 230 covers the bottom gate 220.
  • the bottom gate insulating layer 230 may include silicon nitride (SiN x )/silicon dioxide (SiO 2 ) or SiO 2 or SiN x /silicon oxynitride (SiON)/SiO 2 , but the invention is not limited thereto. .
  • a semiconductor oxide layer 240 is patternedly formed on the bottom gate insulating layer 230.
  • the semiconductor oxide layer 240 may include amorphous indium gallium zinc oxide (a-IGZO), which is mainly composed of zinc oxide (ZnO) and doped with gallium (Ga) and indium (In ).
  • a-IGZO amorphous indium gallium zinc oxide
  • ZnO zinc oxide
  • Ga gallium
  • In indium
  • An etch stop layer 250 is formed on the bottom gate insulating layer 230, and the etch barrier layer 250 covers the semiconductor oxide layer 240. Portions of the etch stop layer 250 may be removed, for example, via an etch process such that the first vias 252 are formed. For example, portions of the etch stop layer 250 may be removed to expose portions of the upper surface of the semiconductor oxide layer 240 through the respective first vias 252.
  • the etch barrier layer 250 may include SiO 2 , but the present invention is not limited thereto.
  • the drain 260b and the source 260a are patternedly formed on the etch stop layer 250 while also patterningly forming a data line 294 for receiving a data signal, wherein the data line 294 is connected to the source 260a. Portions of the drain 260b may fill the first via 252, such as directly contacting the semiconductor oxide layer 240. The drain 260b of the thin film transistor directly contacts the semiconductor oxide layer 240 through the first via 252.
  • An insulating protective layer 270 is formed on the etch barrier layer 250, and the insulating protective layer 270 covers the drain 260b.
  • the insulating protective layer 270 may include SiN x /SiO 2 or SiO 2 , but the present invention is not limited thereto.
  • a portion of the insulating protective layer 270, a portion of the etch barrier layer 250, and a portion of the bottom gate insulating layer 230 may be removed, for example, via an etching process, such that the second via 272 is formed.
  • a portion of the insulating protective layer 270, a portion of the etch barrier layer 250, and a portion of the bottom gate insulating layer 230 may be removed to expose a portion of the upper surface of the bottom gate 220 through the corresponding second via 272.
  • the second via hole 272 penetrates through the insulating protective layer 270, the etch barrier layer 250, and the bottom gate insulating layer 230, thereby exposing a portion of the upper surface of the bottom gate 220.
  • the top gate 280a is patterned on the insulating protective layer 270. Portions of the top gate 280a may fill the second via 272, such as directly contacting the bottom gate 220.
  • the top gate 280a of the thin film transistor directly contacts the bottom gate 220 through the second via 272.
  • the top gate 280a forming the thin film transistor is made of the same material as the material forming the pixel electrode 280b.
  • the top gate 280a and the pixel electrode 280b of the thin film transistor can be formed using a transparent conductive film (indium tin oxide ITO). That is, while the pixel electrode 280b is formed using, for example, an ITO material, the top gate 280a of the thin film transistor is formed.
  • the pixel electrode 280b and the drain electrode 260b are in direct contact through the third via hole 262, and the top gate 280a of the thin film transistor is in direct contact with the bottom gate 220, the pixel electrode cannot be in contact with the top gate 280a. .
  • the a-IGZO TFT according to the embodiment of the present invention can prevent the threshold voltage from drifting, thereby improving the reliability of the a-IGZO TFT, thereby improving the display of the liquid crystal display panel. quality.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

公开一种薄膜晶体管阵列基板（200），包括：在基板(210)上的底栅极(220)和覆盖底栅极(220)的底栅极绝缘层(230)；在底栅极绝缘层(230)上的半导体氧化物层(240)以及覆盖半导体氧化物层(240)且具有第一通孔(252)的刻蚀阻挡层(250)；在刻蚀阻挡层(250)上的通过第一通孔(252)接触半导体氧化物层(240)的漏极(260b)和覆盖漏极(260b)的绝缘保护层(270)；在绝缘保护层(270)、刻蚀阻挡层(250)以及底栅极绝缘层(230)中的第二通孔(272)；在绝缘保护层(270)上的通过第二通孔(272)接触底栅极(220)的顶栅极(280a)。同时还公开一种薄膜晶体管阵列基板（200）的制造方法。薄膜晶体管在光照负偏压的情况下能够防止阈值电压发生漂移。

Description

一种薄膜晶体管阵列基板及其制造方法 技术领域
本发明属于显示技术领域，具体地讲，涉及一种能够在光照负偏压(NBIS)的情况下防止阈值电压(Vth)发生漂移的薄膜晶体管阵列基板及其制造方法。
背景技术
随着光电与半导体技术的演进，也带动了平板显示器(Flat Panel Display)的蓬勃发展，而在诸多平板显示器中，液晶显示器(Liquid Crystal Display，简称LCD)因具有高空间利用效率、低消耗功率、无辐射以及低电磁干扰等诸多优越特性，已成为市场的主流。
液晶显示器通常包括相对设置的液晶显示面板及背光模块，背光模块提供显示光源给液晶显示面板。液晶显示面板通常包括薄膜晶体管阵列基板、彩色滤光片基板及夹设于这两个基板之间的液晶层，其籍由分别施加电压至这两个基板，控制液晶层中的液晶分子扭转而实现光的通过或不通过，从而达到显示的目的。
薄膜晶体管阵列基板包括在基板上阵列形成的若干薄膜晶体管(TFT)。由于与传统的非晶硅(a-Si)薄膜晶体管相比，非晶氧化铟镓锌(a-IGZO)薄膜晶体管具有较高电子迁移率、低温制备能力、优秀的大面积制备均一性、良好的可见光透明度、较高的开/关比和低阈值电压(Vth)等优势，近年来a-IGZO TFT逐渐成为有源矩阵显示器中的优选开关元件。然而，由于在光照负偏压(NBIS)的情况下，a-IGZO TFT的阈值电压容易发生漂移，所以目前很难使得a-IGZO TFT实现规模化的量产。
发明内容
为了解决上述现有技术的问题，本发明的目的在于提供一种能够在光照负偏压的情况下防止阈值电压发生漂移的薄膜晶体管阵列基板及其制造方法。
根据本发明的一方面，提供了一种薄膜晶体管阵列基板，其包括：在基板上的薄膜晶体管的底栅极；在所述基板上且覆盖所述底栅极的底栅极绝缘层；在所述底栅极绝缘层上的半导体氧化物层；在所述底栅极绝缘层上且覆盖所述半导体氧化物层的刻蚀阻挡层，所述刻蚀阻挡层包括第一通孔，通过所述第一通孔露出所述半导体氧化物层的部分；在所述刻蚀阻挡层上的所述薄膜晶体管的漏极和源极，所述漏极通过所述第一通孔接触所述半导体氧化物层；在所述刻蚀阻挡层上且覆盖所述漏极和所述源极的绝缘保护层；在所述绝缘保护层、所述刻蚀阻挡层以及所述底栅极绝缘层中的第二通孔，通过所述第二通孔露出所述底栅极的部分；在所述绝缘保护层上的顶栅极，所述顶栅极通过所述第二通孔接触所述底栅极。
进一步地，所述半导体氧化物层包括非晶氧化铟镓锌。
进一步地，所述底栅极包括至少一种金属材料。
进一步地，所述顶栅极与像素电极采用的材料相同。
进一步地，所述像素电极包括氧化铟锡。
根据本发明的另一方面，提供了一种薄膜晶体管阵列基板的制造方法，其包括：在基板上形成薄膜晶体管的底栅极；在所述基板上形成覆盖所述底栅极的底栅极绝缘层；在所述底栅极绝缘层上形成半导体氧化物层；在所述底栅极绝缘层上形成覆盖所述半导体氧化物层的刻蚀阻挡层；在所述刻蚀阻挡层中形成第一通孔，以使所述第一通孔露出所述半导体氧化物层的部分；在所述刻蚀阻挡层上形成所述薄膜晶体管的漏极和源极，以使所述漏极通过所述第一通孔接触所述半导体氧化物层；在所述刻蚀阻挡层上形成覆盖所述漏极和所述源极的绝缘保护层；在所述绝缘保护层、所述刻蚀阻挡层以及所述底栅极绝缘层中形成第二通孔，以使所述第二通孔露出所述底栅极的部分；在所述绝缘保护层上形成顶栅极，以使所述顶栅极通过所述第二通孔接触所述底栅极。
进一步地，利用非晶氧化铟镓锌材料形成所述半导体氧化物层。
进一步地，利用至少一种金属材料形成所述底栅极。
进一步地，利用透明导电材料同时形成所述顶栅极和像素电极。
进一步地，利用氧化铟锡材料同时形成所述顶栅极和所述像素电极。
本发明的有益效果：在光照负偏压的情况下，形成在基板上的薄膜晶体管可防止其阈值电压发生漂移，从而提高薄膜晶体管的可靠性，进而提升液晶显示面板的显示品质。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1示出了根据本发明的实施例的液晶显示面板的侧视示意图；
图2示出了根据本发明的实施例的薄膜晶体管阵列基板的剖视示意图；
图3示出了根据本发明的实施例的薄膜晶体管阵列基板的俯视示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，为了清楚器件，夸大了层和区域的厚度，相同的标号在整个说明书和附图中可用来表示相同的元件。也将理解的是，在一层或元件被称为形成在另一层或基板“上”时，它可以直接形成在该另一层或基板上，或者也可以存在中间层。
图1示出了根据本发明的实施例的液晶显示面板的侧视示意图。
参照图1，根据本发明的实施例的液晶显示面板包括彩色滤光片基板100、薄膜晶体管阵列基板200以及夹设在彩色滤光片基板100和薄膜晶体管阵列基板200之间的液晶层300。
液晶层300中包括若干液晶分子。与薄膜晶体管阵列基板200相对设置的彩色滤光片基板100也称CF(Color Filter)基板，其通常包括基板(诸如透明玻璃基板、PET基板)以及设置在基板上的黑色矩阵图案、彩色滤光层(诸如 红(R)、绿(G)和蓝(B)滤光片图案)以及配向层等。鉴于根据本发明的实施例的彩色滤光片基板100与现有的液晶显示面板中的彩色滤光片基板大致相同，因此其具体结构可参照相关的现有技术文献中的描述，在此就不再赘述。
图2示出了根据本发明的实施例的薄膜晶体管阵列基板的剖视示意图。图3示出了根据本发明的实施例的薄膜晶体管阵列基板的俯视示意图。
参照图2，根据本发明的实施例的薄膜晶体管阵列基板200也称TFT(Thin Film Transistor)基板，其包括基板210、底栅极220、底栅极绝缘层230、半导体氧化物层240、刻蚀阻挡层250、源极260a和漏极260b、绝缘保护层270、顶栅极280a。
基板210可例如是透明的玻璃基板或PET基板，但本发明不限制于此。
在本实施例中，底栅极220被图案化地形成在基板210上，其中，在基板210上图案化地形成底栅极220的同时，在基板210上也图案化地形成用于接收扫描信号的扫描线292。这里，底栅极220和扫描线292都是利用至少一种金属材料而形成，例如，铝、钼、铜等的一种或多种。优选地，底栅极220包括的金属材料与扫描线包括的金属材料相同，这样，可方便二者同时形成。
底栅极绝缘层230形成在基板210上，并且底栅极绝缘层230覆盖底栅极220。这里，底栅极绝缘层230可包括氮化硅(SiNx)/二氧化硅(SiO2)或SiO2或SiNx/硅氧氮(SiON)/SiO2，但本发明并不限制于此。
半导体氧化物层240被图案化地形成在底栅极绝缘层230。这里，半导体氧化物层240可包括非晶氧化铟镓锌(a-IGZO)，该非晶氧化铟镓锌以氧化锌(ZnO)为主成分，并掺杂有镓(Ga)和铟(In)。
刻蚀阻挡层250形成在底栅极绝缘层230上，并且刻蚀阻挡层250覆盖半导体氧化物层240。刻蚀阻挡层250的部分可例如经由刻蚀工艺被去除，使得第一通孔252被形成。例如，刻蚀阻挡层250的部分可以被去除以通过相应第一通孔252露出半导体氧化物层240的上表面的部分。这里，刻蚀阻挡层250可包括SiO2，但本发明并不限制于此。
漏极260b和源极260a被图案化地形成在刻蚀阻挡层250上，同时也图案化地形成用于接收数据信号的数据线294，其中，数据线294与源极260a连接。漏极260b的部分可以填充第一通孔252，例如直接接触半导体氧化物层240。 薄膜晶体管的漏极260b通过第一通孔252直接接触半导体氧化物层240。
绝缘保护层270形成在刻蚀阻挡层250上，并且绝缘保护层270覆盖漏极260b。这里，绝缘保护层270可包括SiNx/SiO2或SiO2，但本发明并不限制于此。
绝缘保护层270的部分、刻蚀阻挡层250的部分以及底栅极绝缘层230的部分可例如经由刻蚀工艺被去除，使得第二通孔272被形成。例如，绝缘保护层270的部分、刻蚀阻挡层250的部分以及底栅极绝缘层230的部分可以被去除以通过相应第二通孔272露出底栅极220的上表面的部分。换句话说，第二通孔272贯穿绝缘保护层270、刻蚀阻挡层250以及底栅极绝缘层230，从而将底栅极220的上表面的部分露出。
顶栅极280a被图案化地形成在绝缘保护层270上。顶栅极280a的部分可以填充第二通孔272，例如直接接触底栅极220。薄膜晶体管的顶栅极280a通过第二通孔272直接接触底栅极220。这里，应当说明的是，形成薄膜晶体管的顶栅极280a所采用的材料与形成像素电极280b的材料相同。例如，可利用透明的导电薄膜(氧化铟锡ITO)形成薄膜晶体管的顶栅极280a和像素电极280b。也就是说，利用诸如ITO材料形成像素电极280b的同时，形成薄膜晶体管的顶栅极280a。但是，应当理解的是，由于像素电极280b与漏极260b通过第三通孔262直接接触，而薄膜晶体管的顶栅极280a与底栅极220直接接触，所以像素电极不能与顶栅极280a接触。
综上所述，在光照负偏压的情况下，根据本发明的实施例的a-IGZO TFT可防止其阈值电压发生漂移，从而提高a-IGZO TFT的可靠性，进而提升液晶显示面板的显示品质。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (14)

  1. 一种薄膜晶体管阵列基板，其中，包括：
    在基板上的薄膜晶体管的底栅极；
    在所述基板上且覆盖所述底栅极的底栅极绝缘层；
    在所述底栅极绝缘层上的半导体氧化物层；
    在所述底栅极绝缘层上且覆盖所述半导体氧化物层的刻蚀阻挡层，所述刻蚀阻挡层包括第一通孔，通过所述第一通孔露出所述半导体氧化物层的部分；
    在所述刻蚀阻挡层上的所述薄膜晶体管的漏极和源极，所述漏极通过所述第一通孔接触所述半导体氧化物层；
    在所述刻蚀阻挡层上且覆盖所述漏极和所述源极的绝缘保护层；
    在所述绝缘保护层、所述刻蚀阻挡层以及所述底栅极绝缘层中的第二通孔，通过所述第二通孔露出所述底栅极的部分；
    在所述绝缘保护层上的顶栅极，所述顶栅极通过所述第二通孔接触所述底栅极。
  2. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述半导体氧化物层包括非晶氧化铟镓锌。
  3. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述底栅极包括至少一种金属材料。
  4. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述顶栅极与像素电极采用的材料相同。
  5. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述顶栅极与像素电极采用的材料相同。
  6. 根据权利要求4所述的薄膜晶体管阵列基板，其中，所述像素电极包括氧化铟锡。
  7. 根据权利要求5所述的薄膜晶体管阵列基板，其中，所述像素电极包括氧化铟锡。
  8. 一种薄膜晶体管阵列基板的制造方法，其中，包括：
    在基板上形成薄膜晶体管的底栅极；
    在所述基板上形成覆盖所述底栅极的底栅极绝缘层；
    在所述底栅极绝缘层上形成半导体氧化物层；
    在所述底栅极绝缘层上形成覆盖所述半导体氧化物层的刻蚀阻挡层；
    在所述刻蚀阻挡层中形成第一通孔，以使所述第一通孔露出所述半导体氧化物层的部分；
    在所述刻蚀阻挡层上形成所述薄膜晶体管的漏极和源极，以使所述漏极通过所述第一通孔接触所述半导体氧化物层；
    在所述刻蚀阻挡层上形成覆盖所述漏极和所述源极的绝缘保护层；
    在所述绝缘保护层、所述刻蚀阻挡层以及所述底栅极绝缘层中形成第二通孔，以使所述第二通孔露出所述底栅极的部分；
    在所述绝缘保护层上形成顶栅极，以使所述顶栅极通过所述第二通孔接触所述底栅极。
  9. 根据权利要求8所述的制造方法，其中，利用非晶氧化铟镓锌材料形成所述半导体氧化物层。
  10. 根据权利要求8所述的制造方法，其中，利用至少一种金属材料形成所述底栅极。
  11. 根据权利要求8所述的制造方法，其中，利用透明导电材料同时形成所述顶栅极和像素电极。
  12. 根据权利要求10所述的制造方法，其中，利用透明导电材料同时形成所述顶栅极和像素电极。
  13. 根据权利要求11所述的制造方法，其中，利用氧化铟锡材料同时形成所述顶栅极和所述像素电极。
  14. 根据权利要求12所述的制造方法，其中，利用氧化铟锡材料同时形成所述顶栅极和所述像素电极。
PCT/CN2015/081163 2015-04-09 2015-06-10 一种薄膜晶体管阵列基板及其制造方法 WO2016161700A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/888,416 US9651843B2 (en) 2015-04-09 2015-06-10 Thin film transistor array substrate and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510166111.4A CN104795401A (zh) 2015-04-09 2015-04-09 一种薄膜晶体管阵列基板及其制造方法
CN201510166111.4 2015-04-09

Publications (1)

Publication Number Publication Date
WO2016161700A1 true WO2016161700A1 (zh) 2016-10-13

Family

ID=53560094

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/081163 WO2016161700A1 (zh) 2015-04-09 2015-06-10 一种薄膜晶体管阵列基板及其制造方法

Country Status (3)

Country Link
US (2) US9651843B2 (zh)
CN (1) CN104795401A (zh)
WO (1) WO2016161700A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104795401A (zh) * 2015-04-09 2015-07-22 深圳市华星光电技术有限公司 一种薄膜晶体管阵列基板及其制造方法
CN106252395B (zh) * 2016-08-30 2019-12-03 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管及其制备方法
CN109841688B (zh) * 2019-01-23 2022-04-08 浙江工业职业技术学院 一种薄膜晶体管及其制造方法
CN113488485B (zh) * 2021-06-16 2022-08-05 深圳市华星光电半导体显示技术有限公司 阵列基板、阵列基板的制作方法及显示面板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6623653B2 (en) * 2001-06-12 2003-09-23 Sharp Laboratories Of America, Inc. System and method for etching adjoining layers of silicon and indium tin oxide
CN103474472A (zh) * 2013-09-10 2013-12-25 深圳市华星光电技术有限公司 一种薄膜晶体管、阵列基板及显示面板

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102446925B (zh) * 2010-09-30 2015-05-20 京东方科技集团股份有限公司 阵列基板、液晶显示器及阵列基板的制造方法
CN103928530B (zh) * 2013-05-09 2018-09-21 上海天马微电子有限公司 氧化物薄膜晶体管阵列基板及其制造方法
US20150069510A1 (en) * 2013-09-10 2015-03-12 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin film transistor, array substrate, and display panel
CN104795401A (zh) * 2015-04-09 2015-07-22 深圳市华星光电技术有限公司 一种薄膜晶体管阵列基板及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6623653B2 (en) * 2001-06-12 2003-09-23 Sharp Laboratories Of America, Inc. System and method for etching adjoining layers of silicon and indium tin oxide
CN103474472A (zh) * 2013-09-10 2013-12-25 深圳市华星光电技术有限公司 一种薄膜晶体管、阵列基板及显示面板

Also Published As

Publication number Publication date
US20170017103A1 (en) 2017-01-19
US9651843B2 (en) 2017-05-16
CN104795401A (zh) 2015-07-22
US9778530B2 (en) 2017-10-03
US20170219863A1 (en) 2017-08-03

Similar Documents

Publication Publication Date Title
US10312268B2 (en) Display device
US10146078B2 (en) Liquid crystal display panel and array substrate of the same
US8957418B2 (en) Semiconductor device and display apparatus
US20160018703A1 (en) Array substrate, manufacturing method thereof and display device
US20170162708A1 (en) Tft substrates and the manufacturing methods thereof
CN108376688A (zh) 一种感光组件及其制备方法、阵列基板、显示装置
US9620609B2 (en) Thin film transistor display panel and method of manufacturing the same
US20170255044A1 (en) Tft substrates and the manufacturing methods thereof
US9099404B2 (en) Array substrate and manufacturing method thereof, OLED display device
US10784287B2 (en) TFT substrate and manufacturing method thereof
JP5727118B2 (ja) 薄膜トランジスタ基板、その製造方法、及びこれを有する表示パネル
US9778530B2 (en) Thin film transistor array substrate and manufacturing method thereof
US20210041733A1 (en) Array substrate, method manufacturing same and touch display panel
KR20190131582A (ko) Tft 기판의 제조 방법 및 tft 기판
WO2017088219A1 (zh) 用于液晶面板的阵列基板及其制作方法
CN113467145B (zh) 阵列基板及制作方法、显示面板
KR20120076221A (ko) 산화물 반도체를 포함한 박막 트랜지스터 기판
TW201503374A (zh) 氧化物半導體薄膜電晶體
KR20160125598A (ko) 박막트랜지스터 어레이 기판 및 그의 제조방법, 박막트랜지스터 어레이 기판을 구비한 표시장치
CN208028063U (zh) 一种感光组件、阵列基板、显示装置
US10268093B2 (en) Array substrate and the preparation method thereof, liquid crystal panel
KR20170018130A (ko) 표시 장치
KR20160044168A (ko) 표시 기판 및 이의 제조 방법
US20160313618A1 (en) Liquid crystal display device and manufacturing method thereof
KR102544031B1 (ko) 표시장치용 어레이 기판 및 그 제조 방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14888416

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15888255

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15888255

Country of ref document: EP

Kind code of ref document: A1