JP4738012B2 - 高速なモデルに基づく光学的近接効果補正 - Google Patents
高速なモデルに基づく光学的近接効果補正 Download PDFInfo
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- JP4738012B2 JP4738012B2 JP2005039330A JP2005039330A JP4738012B2 JP 4738012 B2 JP4738012 B2 JP 4738012B2 JP 2005039330 A JP2005039330 A JP 2005039330A JP 2005039330 A JP2005039330 A JP 2005039330A JP 4738012 B2 JP4738012 B2 JP 4738012B2
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/783,938 US7079223B2 (en) | 2004-02-20 | 2004-02-20 | Fast model-based optical proximity correction |
| US10/783938 | 2004-02-20 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005234571A JP2005234571A (ja) | 2005-09-02 |
| JP2005234571A5 JP2005234571A5 (https=) | 2007-04-12 |
| JP4738012B2 true JP4738012B2 (ja) | 2011-08-03 |
Family
ID=34861375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005039330A Expired - Fee Related JP4738012B2 (ja) | 2004-02-20 | 2005-02-16 | 高速なモデルに基づく光学的近接効果補正 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7079223B2 (https=) |
| JP (1) | JP4738012B2 (https=) |
Families Citing this family (68)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2005098686A2 (en) * | 2004-04-02 | 2005-10-20 | Clear Shape Technologies, Inc. | Modeling resolution enhancement processes in integrated circuit fabrication |
| JP2007534166A (ja) * | 2004-04-14 | 2007-11-22 | ライテル・インストルメンツ | 射出瞳透過率を計測する方法および装置 |
| US7310796B2 (en) * | 2004-08-27 | 2007-12-18 | Applied Materials, Israel, Ltd. | System and method for simulating an aerial image |
| US7331033B2 (en) * | 2004-08-27 | 2008-02-12 | Applied Materials, Israel, Ltd. | Simulation of aerial images |
| US7234129B2 (en) * | 2004-09-29 | 2007-06-19 | Synopsys, Inc. | Calculating etch proximity-correction using object-precision techniques |
| EP1696273B1 (en) * | 2005-02-23 | 2008-08-06 | ASML MaskTools B.V. | Method and apparatus for optimising illumination for full-chip layer |
| US7519940B2 (en) * | 2005-05-02 | 2009-04-14 | Cadence Design Systems, Inc. | Apparatus and method for compensating a lithography projection tool |
| EP1889195A4 (en) * | 2005-05-20 | 2012-09-12 | Cadence Desing Systems Inc | PRODUCTION-DESIGN DESIGN AND DESIGNED PRODUCTION |
| US7395516B2 (en) * | 2005-05-20 | 2008-07-01 | Cadence Design Systems, Inc. | Manufacturing aware design and design aware manufacturing |
| US7266803B2 (en) * | 2005-07-29 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layout generation and optimization to improve photolithographic performance |
| US7934172B2 (en) * | 2005-08-08 | 2011-04-26 | Micronic Laser Systems Ab | SLM lithography: printing to below K1=.30 without previous OPC processing |
| US7962868B2 (en) * | 2005-10-28 | 2011-06-14 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device using optical proximity correction for the optical lithography |
| JP2007184378A (ja) * | 2006-01-05 | 2007-07-19 | Canon Inc | 露光装置における露光量および/または焦点合わせのための基板の位置を求める方法および装置 |
| US7921383B1 (en) | 2006-01-11 | 2011-04-05 | Olambda, Inc | Photolithographic process simulation including efficient result computation for multiple process variation values |
| US8165854B1 (en) | 2006-01-11 | 2012-04-24 | Olambda, Inc. | Computer simulation of photolithographic processing |
| US7788628B1 (en) * | 2006-01-11 | 2010-08-31 | Olambda, Inc. | Computational efficiency in photolithographic process simulation |
| WO2007096195A1 (en) * | 2006-02-24 | 2007-08-30 | Micronic Laser Systems Ab | Slm lithography: printing to below k1=.30 without previous opc processing |
| US20070253637A1 (en) * | 2006-03-08 | 2007-11-01 | Mentor Graphics Corp. | Image intensity calculation using a sectored source map |
| US7836423B2 (en) * | 2006-03-08 | 2010-11-16 | Mentor Graphics Corporation | Sum of coherent systems (SOCS) approximation based on object information |
| US7954072B2 (en) * | 2006-05-15 | 2011-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Model import for electronic design automation |
| JP5235322B2 (ja) * | 2006-07-12 | 2013-07-10 | キヤノン株式会社 | 原版データ作成方法及び原版データ作成プログラム |
| WO2008020265A1 (en) * | 2006-08-16 | 2008-02-21 | Koninklijke Philips Electronics N.V. | Method and apparatus for designing an integrated circuit |
| JP4707701B2 (ja) * | 2006-11-08 | 2011-06-22 | エーエスエムエル マスクツールズ ビー.ブイ. | 瞳を有する光学結像システムの結像性能をシミュレーションするモデルを生成する方法およびコンピュータプログラム |
| JP5038743B2 (ja) * | 2007-03-05 | 2012-10-03 | 株式会社東芝 | リソグラフィシミュレーション方法及びプログラム |
| US7933471B2 (en) * | 2007-03-09 | 2011-04-26 | Synopsys, Inc. | Method and system for correlating physical model representation to pattern layout |
| US8682466B2 (en) * | 2007-05-04 | 2014-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Automatic virtual metrology for semiconductor wafer result prediction |
| US7882480B2 (en) * | 2007-06-04 | 2011-02-01 | Asml Netherlands B.V. | System and method for model-based sub-resolution assist feature generation |
| US8732625B2 (en) * | 2007-06-04 | 2014-05-20 | Asml Netherlands B.V. | Methods for performing model-based lithography guided layout design |
| US7707538B2 (en) * | 2007-06-15 | 2010-04-27 | Brion Technologies, Inc. | Multivariable solver for optical proximity correction |
| US7631289B1 (en) * | 2007-06-28 | 2009-12-08 | Cadence Design Systems, Inc. | Method and system for implementing optimized lithography models for accuracy and resolution |
| US9779186B2 (en) | 2007-08-28 | 2017-10-03 | Asml Netherlands B.V. | Methods for performing model-based lithography guided layout design |
| US8527253B2 (en) * | 2007-09-06 | 2013-09-03 | Synopsys, Inc. | Modeling an arbitrarily polarized illumination source in an optical lithography system |
| US7991240B2 (en) * | 2007-09-17 | 2011-08-02 | Aptina Imaging Corporation | Methods, systems and apparatuses for modeling optical images |
| US7707539B2 (en) * | 2007-09-28 | 2010-04-27 | Synopsys, Inc. | Facilitating process model accuracy by modeling mask corner rounding effects |
| US8566755B2 (en) * | 2007-11-26 | 2013-10-22 | Macronix International Co., Ltd. | Method of correcting photomask patterns |
| US8358828B2 (en) * | 2007-12-28 | 2013-01-22 | Cadence Design Systems, Inc. | Interpolation of irregular data in a finite-dimensional metric space in lithographic simulation |
| US8059885B2 (en) * | 2008-01-17 | 2011-11-15 | International Business Machines Corporation | Calculating image intensity of mask by decomposing Manhattan polygon based on parallel edge |
| US7974819B2 (en) * | 2008-05-13 | 2011-07-05 | Aptina Imaging Corporation | Methods and systems for intensity modeling including polarization |
| US7954071B2 (en) * | 2008-10-31 | 2011-05-31 | Synopsys, Inc. | Assist feature placement based on a focus-sensitive cost-covariance field |
| NL2003654A (en) * | 2008-11-06 | 2010-05-10 | Brion Tech Inc | Methods and system for lithography calibration. |
| NL2003719A (en) * | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Delta tcc for fast sensitivity model computation. |
| NL2003716A (en) * | 2008-11-24 | 2010-05-26 | Brion Tech Inc | Harmonic resist model for use in a lithographic apparatus and a device manufacturing method. |
| US8209161B2 (en) * | 2008-12-31 | 2012-06-26 | Cadence Design Systems, Inc. | Method, system, and computer program product for lithography simulation in electronic design automation |
| US8161422B2 (en) * | 2009-01-06 | 2012-04-17 | International Business Machines Corporation | Fast and accurate method to simulate intermediate range flare effects |
| US8078995B2 (en) * | 2009-01-06 | 2011-12-13 | International Business Machines Corporation | Efficient isotropic modeling approach to incorporate electromagnetic effects into lithographic process simulations |
| US8948513B2 (en) * | 2009-01-27 | 2015-02-03 | Apple Inc. | Blurring based content recognizer |
| US8479125B2 (en) * | 2009-03-31 | 2013-07-02 | Christophe Pierrat | Lithography modeling and applications |
| US7944545B2 (en) * | 2009-05-11 | 2011-05-17 | International Business Machines Corporation | High contrast lithographic masks |
| JP5662762B2 (ja) * | 2009-11-20 | 2015-02-04 | キヤノン株式会社 | 有効光源を算出する方法及びプログラム、露光方法並びにデバイス製造方法 |
| US8331646B2 (en) | 2009-12-23 | 2012-12-11 | International Business Machines Corporation | Optical proximity correction for transistors using harmonic mean of gate length |
| NL2006091A (en) * | 2010-03-05 | 2011-09-06 | Asml Netherlands Bv | Design rule optimization in lithographic imaging based on correlation of functions representing mask and predefined optical conditions. |
| US8473271B2 (en) * | 2010-03-12 | 2013-06-25 | Synopsys, Inc. | Fast photolithography process simulation to predict remaining resist thickness |
| US8402399B2 (en) | 2010-04-30 | 2013-03-19 | International Business Machines Corporation | Method and system for computing fourier series coefficients for mask layouts using FFT |
| US8415077B2 (en) | 2010-08-13 | 2013-04-09 | International Business Machines Corporation | Simultaneous optical proximity correction and decomposition for double exposure lithography |
| US8905314B2 (en) | 2010-09-30 | 2014-12-09 | Apple Inc. | Barcode recognition using data-driven classifier |
| KR20130008662A (ko) | 2011-02-28 | 2013-01-23 | 삼성전자주식회사 | 포토마스크 레이아웃 형성 방법 |
| NL2009056A (en) * | 2011-08-09 | 2013-02-12 | Asml Netherlands Bv | A lithographic model for 3d topographic wafers. |
| US8832621B1 (en) | 2011-11-28 | 2014-09-09 | Cadence Design Systems, Inc. | Topology design using squish patterns |
| JP5969848B2 (ja) * | 2012-07-19 | 2016-08-17 | キヤノン株式会社 | 露光装置、調整対象の調整量を求める方法、プログラム及びデバイスの製造方法 |
| US8589831B1 (en) * | 2012-07-30 | 2013-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Skew sensitive calculation for misalignment from multi patterning |
| US9395622B2 (en) * | 2014-02-20 | 2016-07-19 | Globalfoundries Inc. | Synthesizing low mask error enhancement factor lithography solutions |
| US10394984B2 (en) | 2015-11-25 | 2019-08-27 | International Business Machines Corporation | Tool to provide integrated circuit masks with accurate dimensional compensation of patterns |
| DE102016209616A1 (de) * | 2016-06-01 | 2017-12-07 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses |
| DE102018202639B4 (de) * | 2018-02-21 | 2019-11-21 | Carl Zeiss Smt Gmbh | Verfahren zur Bestimmung eines strukturunabhängigen Beitrags einer Lithographie-Maske zu einer Schwankung der Linienbreite |
| US10809629B2 (en) * | 2018-08-31 | 2020-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for computing feature kernels for optical model simulation |
| US11017147B2 (en) * | 2019-08-30 | 2021-05-25 | Siemens Industry Software Inc. | Edge-based camera for characterizing semiconductor layout designs |
| US12182487B2 (en) | 2021-08-30 | 2024-12-31 | Siemens Industry Software Inc. | Controllable pattern clustering for characterized semiconductor layout designs |
| CN115390372B (zh) * | 2022-09-29 | 2023-04-11 | 武汉宇微光学软件有限公司 | 一种光刻系统掩模成像方法、装置及系统 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW552561B (en) * | 2000-09-12 | 2003-09-11 | Asml Masktools Bv | Method and apparatus for fast aerial image simulation |
| US6563566B2 (en) * | 2001-01-29 | 2003-05-13 | International Business Machines Corporation | System and method for printing semiconductor patterns using an optimized illumination and reticle |
-
2004
- 2004-02-20 US US10/783,938 patent/US7079223B2/en not_active Expired - Fee Related
-
2005
- 2005-02-16 JP JP2005039330A patent/JP4738012B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20050185159A1 (en) | 2005-08-25 |
| US7079223B2 (en) | 2006-07-18 |
| JP2005234571A (ja) | 2005-09-02 |
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