JP4735491B2 - 不良検査方法および装置 - Google Patents

不良検査方法および装置 Download PDF

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Publication number
JP4735491B2
JP4735491B2 JP2006255177A JP2006255177A JP4735491B2 JP 4735491 B2 JP4735491 B2 JP 4735491B2 JP 2006255177 A JP2006255177 A JP 2006255177A JP 2006255177 A JP2006255177 A JP 2006255177A JP 4735491 B2 JP4735491 B2 JP 4735491B2
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Japan
Prior art keywords
probe
sample
contact
electron beam
electrode
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Expired - Lifetime
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JP2006255177A
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English (en)
Japanese (ja)
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JP2006352165A (ja
JP2006352165A5 (enExample
Inventor
聡 富松
剛 長谷川
茂行 細木
史子 荒川
匡一郎 朝山
泰裕 三井
仁 中原
義実 川浪
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Hitachi Ltd
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Hitachi Ltd
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Publication date
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Priority to JP2006255177A priority Critical patent/JP4735491B2/ja
Publication of JP2006352165A publication Critical patent/JP2006352165A/ja
Publication of JP2006352165A5 publication Critical patent/JP2006352165A5/ja
Application granted granted Critical
Publication of JP4735491B2 publication Critical patent/JP4735491B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/208—Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof, e.g. prober needles or transfer needles in FIB/SEM systems

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2006255177A 2006-09-21 2006-09-21 不良検査方法および装置 Expired - Lifetime JP4735491B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006255177A JP4735491B2 (ja) 2006-09-21 2006-09-21 不良検査方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006255177A JP4735491B2 (ja) 2006-09-21 2006-09-21 不良検査方法および装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003334550A Division JP3879722B2 (ja) 2003-09-26 2003-09-26 検査装置

Publications (3)

Publication Number Publication Date
JP2006352165A JP2006352165A (ja) 2006-12-28
JP2006352165A5 JP2006352165A5 (enExample) 2007-03-22
JP4735491B2 true JP4735491B2 (ja) 2011-07-27

Family

ID=37647589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006255177A Expired - Lifetime JP4735491B2 (ja) 2006-09-21 2006-09-21 不良検査方法および装置

Country Status (1)

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JP (1) JP4735491B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792413B2 (ja) * 2007-02-28 2011-10-12 株式会社日立ハイテクノロジーズ 試料の電気測定方法、及びプローバ装置
JP2010272586A (ja) * 2009-05-19 2010-12-02 Hitachi High-Technologies Corp 荷電粒子線装置
CN113740697B (zh) * 2021-09-26 2024-04-19 长鑫存储技术有限公司 半导体器件的测试方法、设备及系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
JP3086465B2 (ja) * 1989-09-27 2000-09-11 ソニー株式会社 信号再生方法
JPH03113830U (enExample) * 1990-03-06 1991-11-21
JPH0567654A (ja) * 1991-09-09 1993-03-19 Fujitsu Ltd 半導体試験装置及び半導体集積回路装置の試験方法
JPH05347338A (ja) * 1992-06-16 1993-12-27 Hitachi Ltd 微細回路の動作状態検査装置

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Publication number Publication date
JP2006352165A (ja) 2006-12-28

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