JP4723827B2 - 抵抗回路 - Google Patents

抵抗回路 Download PDF

Info

Publication number
JP4723827B2
JP4723827B2 JP2004228587A JP2004228587A JP4723827B2 JP 4723827 B2 JP4723827 B2 JP 4723827B2 JP 2004228587 A JP2004228587 A JP 2004228587A JP 2004228587 A JP2004228587 A JP 2004228587A JP 4723827 B2 JP4723827 B2 JP 4723827B2
Authority
JP
Japan
Prior art keywords
resistor
polycrystalline silicon
concentration impurity
potential
resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004228587A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006049581A5 (enExample
JP2006049581A (ja
Inventor
博文 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2004228587A priority Critical patent/JP4723827B2/ja
Priority to US11/193,837 priority patent/US7485933B2/en
Priority to CNB2005100885612A priority patent/CN100539145C/zh
Publication of JP2006049581A publication Critical patent/JP2006049581A/ja
Publication of JP2006049581A5 publication Critical patent/JP2006049581A5/ja
Application granted granted Critical
Publication of JP4723827B2 publication Critical patent/JP4723827B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP2004228587A 2004-08-04 2004-08-04 抵抗回路 Expired - Lifetime JP4723827B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004228587A JP4723827B2 (ja) 2004-08-04 2004-08-04 抵抗回路
US11/193,837 US7485933B2 (en) 2004-08-04 2005-07-29 Semiconductor integrated circuit device having polycrystalline silicon resistor circuit
CNB2005100885612A CN100539145C (zh) 2004-08-04 2005-08-04 电阻电路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004228587A JP4723827B2 (ja) 2004-08-04 2004-08-04 抵抗回路

Publications (3)

Publication Number Publication Date
JP2006049581A JP2006049581A (ja) 2006-02-16
JP2006049581A5 JP2006049581A5 (enExample) 2007-07-26
JP4723827B2 true JP4723827B2 (ja) 2011-07-13

Family

ID=35756603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004228587A Expired - Lifetime JP4723827B2 (ja) 2004-08-04 2004-08-04 抵抗回路

Country Status (3)

Country Link
US (1) US7485933B2 (enExample)
JP (1) JP4723827B2 (enExample)
CN (1) CN100539145C (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956277B1 (en) * 2004-03-23 2005-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Diode junction poly fuse
US7616089B2 (en) * 2007-09-28 2009-11-10 Cirrus Logic, Inc. Compensation of field effect on polycrystalline resistors
JP2010182954A (ja) * 2009-02-06 2010-08-19 Seiko Instruments Inc 半導体装置
US9825141B2 (en) 2015-05-26 2017-11-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Three dimensional monolithic LDMOS transistor
JP6764692B2 (ja) * 2016-05-24 2020-10-07 Koa株式会社 シャント抵抗器およびシャント抵抗器の実装構造
JP7361567B2 (ja) * 2019-10-25 2023-10-16 ローム株式会社 電子部品
KR102747221B1 (ko) * 2020-11-30 2024-12-31 삼성전기주식회사 칩 저항기
JP7732354B2 (ja) * 2021-12-28 2025-09-02 富士電機株式会社 半導体装置
CN117810223B (zh) * 2024-02-29 2024-05-10 成都本原聚能科技有限公司 一种多晶硅电阻电路、制备方法及音频差分电路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2864576B2 (ja) * 1988-11-22 1999-03-03 セイコーエプソン株式会社 半導体装置
JP2664793B2 (ja) * 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
JPH0669427A (ja) * 1992-08-17 1994-03-11 Nec Corp 半導体集積装置
JPH06188371A (ja) * 1992-12-21 1994-07-08 Hitachi Ltd 半導体集積回路装置
JP3526701B2 (ja) * 1995-08-24 2004-05-17 セイコーインスツルメンツ株式会社 半導体装置
JPH09289290A (ja) * 1996-04-19 1997-11-04 S I I R D Center:Kk 半導体装置

Also Published As

Publication number Publication date
US20060027894A1 (en) 2006-02-09
CN100539145C (zh) 2009-09-09
US7485933B2 (en) 2009-02-03
JP2006049581A (ja) 2006-02-16
CN1734768A (zh) 2006-02-15

Similar Documents

Publication Publication Date Title
JP5008543B2 (ja) 半導体装置
CN101800221B (zh) 半导体器件
JP4723827B2 (ja) 抵抗回路
US8558608B2 (en) Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing method of poly silicon resistor
US7034653B2 (en) Semiconductor resistor
JP4880939B2 (ja) 半導体装置
JP4811988B2 (ja) 半導体装置
US7391082B2 (en) Semiconductor integrated circuit having resistor
JP4697384B2 (ja) 半導体装置
KR101155703B1 (ko) 반도체 장치
JP2025088690A (ja) 分圧回路及びそれを用いた半導体装置
JP4951851B2 (ja) 半導体装置
KR100493587B1 (ko) 반도체장치및그제조방법
US9362419B2 (en) Variable resistance device having parallel structure
JP2982435B2 (ja) 抵抗器
JPH09260588A (ja) 半導体装置
JP2010016059A (ja) 半導体装置の製造方法
JPH06310661A (ja) 半導体集積回路装置
JPH0228268B2 (enExample)
JPS61176147A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070607

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070607

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091105

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100525

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100721

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100824

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101118

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20101126

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110405

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110408

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140415

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250