JP4723711B2 - 半導体メモリ - Google Patents

半導体メモリ Download PDF

Info

Publication number
JP4723711B2
JP4723711B2 JP2000267085A JP2000267085A JP4723711B2 JP 4723711 B2 JP4723711 B2 JP 4723711B2 JP 2000267085 A JP2000267085 A JP 2000267085A JP 2000267085 A JP2000267085 A JP 2000267085A JP 4723711 B2 JP4723711 B2 JP 4723711B2
Authority
JP
Japan
Prior art keywords
read
words
word
semiconductor memory
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000267085A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002074965A5 (enExample
JP2002074965A (ja
Inventor
利巳 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kawasaki Microelectronics Inc
Original Assignee
Kawasaki Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Microelectronics Inc filed Critical Kawasaki Microelectronics Inc
Priority to JP2000267085A priority Critical patent/JP4723711B2/ja
Publication of JP2002074965A publication Critical patent/JP2002074965A/ja
Publication of JP2002074965A5 publication Critical patent/JP2002074965A5/ja
Application granted granted Critical
Publication of JP4723711B2 publication Critical patent/JP4723711B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP2000267085A 2000-09-04 2000-09-04 半導体メモリ Expired - Lifetime JP4723711B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000267085A JP4723711B2 (ja) 2000-09-04 2000-09-04 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000267085A JP4723711B2 (ja) 2000-09-04 2000-09-04 半導体メモリ

Publications (3)

Publication Number Publication Date
JP2002074965A JP2002074965A (ja) 2002-03-15
JP2002074965A5 JP2002074965A5 (enExample) 2007-10-04
JP4723711B2 true JP4723711B2 (ja) 2011-07-13

Family

ID=18754059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000267085A Expired - Lifetime JP4723711B2 (ja) 2000-09-04 2000-09-04 半導体メモリ

Country Status (1)

Country Link
JP (1) JP4723711B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007213699A (ja) 2006-02-09 2007-08-23 Toshiba Corp 半導体記憶装置
JP2009295229A (ja) * 2008-06-05 2009-12-17 Toshiba Corp 半導体記憶装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05282869A (ja) * 1992-03-31 1993-10-29 Nec Corp 半導体記憶装置
JPH07296585A (ja) * 1994-04-22 1995-11-10 Hitachi Ltd マルチポ−トメモリ
JPH1040685A (ja) * 1996-07-23 1998-02-13 Mitsubishi Electric Corp 同期型記憶装置および同期型記憶装置におけるデータ読み出し方法

Also Published As

Publication number Publication date
JP2002074965A (ja) 2002-03-15

Similar Documents

Publication Publication Date Title
KR930001282B1 (ko) 반도체 메모리
TWI771090B (zh) 記憶體裝置、記憶體輸入/輸出以及形成記憶體裝置的方法
US6549483B2 (en) RAM having dynamically switchable access modes
JP2004327011A (ja) 半導体メモリ装置
US4937788A (en) Semiconductor memory circuit with improved serial access circuit arrangement
US11361818B2 (en) Memory device with global and local latches
US6366526B2 (en) Static random access memory (SRAM) array central global decoder system and method
KR100955251B1 (ko) Ｓｒａｍ 회로 및 이것을 이용한 버퍼 회로
JP4156706B2 (ja) 半導体記憶装置
JPH07141873A (ja) 半導体記憶装置
US20150269995A1 (en) Semiconductor device
US6404693B1 (en) Integrated circuit memory devices that select sub-array blocks and input/output line pairs based on input/output bandwidth, and methods of controlling same
JP4723711B2 (ja) 半導体メモリ
US20240087641A1 (en) Memory device with global and local latches
US6292401B1 (en) Method and apparatus for global bitline multiplexing for a high-speed memory
US6426913B1 (en) Semiconductor memory device and layout method thereof
JP2003045187A (ja) 半導体記憶装置
US6219296B1 (en) Multiport memory cell having a reduced number of write wordlines
US7433259B2 (en) Semiconductor memory device having layered bit line structure
US6201741B1 (en) Storage device and a control method of the storage device
US6795371B2 (en) Semiconductor memory apparatus of which data are accessible by different addressing type
KR0145889B1 (ko) 공통 비트 라인의 접속 구조를 갖는 메모리 셀 어레이 및 반도체 메모리 장치
JP3733279B2 (ja) 集積回路
JP4121360B2 (ja) 半導体記憶装置
US6337806B1 (en) Semiconductor device having data multiplexing and data masking functions

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070822

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070822

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100602

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100615

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100811

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110405

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110408

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140415

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4723711

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250