JP4719766B2 - 脆性破壊を防止するための無電解NiXPで表面処理された電子部品の接合方法 - Google Patents
脆性破壊を防止するための無電解NiXPで表面処理された電子部品の接合方法 Download PDFInfo
- Publication number
- JP4719766B2 JP4719766B2 JP2008111954A JP2008111954A JP4719766B2 JP 4719766 B2 JP4719766 B2 JP 4719766B2 JP 2008111954 A JP2008111954 A JP 2008111954A JP 2008111954 A JP2008111954 A JP 2008111954A JP 4719766 B2 JP4719766 B2 JP 4719766B2
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- Prior art keywords
- electroless
- solder
- nixp
- brittle fracture
- treated
- Prior art date
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- Expired - Fee Related
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/0346—Plating
- H01L2224/03464—Electroless plating
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- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05664—Palladium [Pd] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/16501—Material at the bonding interface
- H01L2224/16503—Material at the bonding interface comprising an intermetallic compound
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- H01L2924/01025—Manganese [Mn]
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- H—ELECTRICITY
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- H01L2924/01046—Palladium [Pd]
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
先ず、本発明は、無電解ニッケルにより表面処理された電子部品を接合する場合に生じる、脆性破壊を防止することができる方法であって、無電解ニッケルメッキ浴に、Ni3PとNiSnP層の形成を抑制する元素の塩を添加してNiXP(Xは、W、Mo、Co、Ti、Zr、Zn、V、Cr、Fe、Nb、Re、Mn、Tl及びCuから選ばれる少なくとも1種の金属原子) UBMを形成し、無鉛はんだをNiXP UBMにリフローして両側の印刷回路基板を相互接合させることを特徴として構成される。
図11は、脆性破壊が発生した比較試片の断面写真であって、従来報告された内容と同様に金属間化合物がスポーリングされ、NiSnP層において脆性破壊が発生したことを示している。一方、無電解ニッケル層にタングステンを添加してUBMを形成した場合は、400回以上のドロップにおいても脆性破壊が発生していないことを確認することができた。
12:金属配線
14:無電解Ni−W−P
16:はんだマスク
18:Ni3Sn4金属間化合物
20:Sn3.5Agはんだ
22:印刷回路基板
Claims (2)
- はんだを利用して電子部品を接合するときの脆性破壊を防止する接合方法において、
Re又はMnを含む金属塩が添加された無電解ニッケルメッキ浴を用いて、電子部品の金属配線に無電解NiXP(Xは、Re又はMnの金属原子)金属層を形成する段階と、無鉛はんだを無電解NiXP層上にリフローして接合する段階を包含してなることを特徴とするはんだ接合部の脆性破壊を防止する無電解NiXPで表面処理された電子部品の接合方法。 - 電子部品の接合が、半導体チップとパッケージ部品、パッケージ部品と印刷回路基板、または半導体チップと印刷回路基板との接合であることを特徴とする請求項1に記載の無電解NiXPで表面処理された電子部品の接合方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0041498 | 2007-04-27 | ||
KR1020070041498A KR100876646B1 (ko) | 2007-04-27 | 2007-04-27 | 취성파괴 방지를 위한 무전해 NiXP로 표면처리된전자부품의 접합 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008285752A JP2008285752A (ja) | 2008-11-27 |
JP4719766B2 true JP4719766B2 (ja) | 2011-07-06 |
Family
ID=39885782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008111954A Expired - Fee Related JP4719766B2 (ja) | 2007-04-27 | 2008-04-23 | 脆性破壊を防止するための無電解NiXPで表面処理された電子部品の接合方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080265006A1 (ja) |
JP (1) | JP4719766B2 (ja) |
KR (1) | KR100876646B1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5261263B2 (ja) * | 2009-03-31 | 2013-08-14 | Dowaメタルテック株式会社 | ろう材及びろう材の接合方法 |
CN101554686B (zh) * | 2009-05-15 | 2011-11-16 | 西安理工大学 | 用于焊接硬质合金与钢的高熵合金钎料及制备方法 |
JP5552957B2 (ja) * | 2010-08-17 | 2014-07-16 | Tdk株式会社 | 端子構造、プリント配線板、モジュール基板及び電子デバイス |
JP5552958B2 (ja) * | 2010-08-17 | 2014-07-16 | Tdk株式会社 | 端子構造、プリント配線板、モジュール基板及び電子デバイス |
JP5764355B2 (ja) * | 2011-03-09 | 2015-08-19 | セイコーインスツル株式会社 | 電子部品およびその製造方法 |
CN103718280B (zh) * | 2011-09-16 | 2016-12-21 | 松下知识产权经营株式会社 | 安装结构及其制造方法 |
US10180035B2 (en) * | 2013-04-01 | 2019-01-15 | Schlumberger Technology Corporation | Soldered components for downhole use |
JP6197619B2 (ja) * | 2013-12-09 | 2017-09-20 | 富士通株式会社 | 電子装置及び電子装置の製造方法 |
EP3067142B1 (en) * | 2015-03-12 | 2020-08-26 | Services Pétroliers Schlumberger | Soldered components for downhole use |
CN106282660A (zh) * | 2016-08-15 | 2017-01-04 | 苏州润利电器有限公司 | 一种电器配件用双层复合高性能合金 |
CN110560815B (zh) * | 2019-09-29 | 2021-10-08 | 重庆理工大学 | 一种具有[100]择尤取向的全imc微焊点的制备方法 |
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JP2002256444A (ja) * | 2001-03-05 | 2002-09-11 | Okuno Chem Ind Co Ltd | 配線基板 |
JP2006526070A (ja) * | 2003-05-09 | 2006-11-16 | ビーエーエスエフ アクチェンゲゼルシャフト | 半導体工業に使用するための三成分系材料を無電解メッキする組成物 |
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JP2834380B2 (ja) * | 1993-03-15 | 1998-12-09 | ストアメディア インコーポレーテッド | 金属薄膜型磁気記録媒体 |
JPH08130227A (ja) * | 1994-10-31 | 1996-05-21 | World Metal:Kk | 半導体チップ、半導体チップの端子の形成方法及び半導体チップの接合方法 |
GB9701819D0 (en) * | 1997-01-29 | 1997-03-19 | Alpha Fry Ltd | Lead-free tin alloy |
US20030007885A1 (en) * | 1999-03-16 | 2003-01-09 | Shinjiro Domi | Lead-free solder |
JP2001210843A (ja) * | 1999-11-17 | 2001-08-03 | Fuji Mach Mfg Co Ltd | 光発電パネルおよびその製造方法 |
JP4136641B2 (ja) * | 2002-02-28 | 2008-08-20 | 株式会社ルネサステクノロジ | 半導体装置の接続条件の算出方法 |
US20060024943A1 (en) * | 2004-07-30 | 2006-02-02 | Kang Sung K | Prevention and control of intermetallic alloy inclusions that form during reflow of Pb free, Sn rich, solders in contacts in microelectronic packaging in integrated circuit contact structures where electroless Ni(P) metallization is present |
KR100718169B1 (ko) * | 2006-01-12 | 2007-05-15 | 한국과학기술원 | 니켈 표면 처리된 전자부품과 무전해 니켈 표면 처리된전자부품의 접합방법 |
US20080248194A1 (en) * | 2007-04-04 | 2008-10-09 | L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for producing a copper layer on a substrate in a flat panel display manufacturing process |
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2007
- 2007-04-27 KR KR1020070041498A patent/KR100876646B1/ko not_active IP Right Cessation
- 2007-07-20 US US11/878,173 patent/US20080265006A1/en not_active Abandoned
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2008
- 2008-04-23 JP JP2008111954A patent/JP4719766B2/ja not_active Expired - Fee Related
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JP2002256444A (ja) * | 2001-03-05 | 2002-09-11 | Okuno Chem Ind Co Ltd | 配線基板 |
JP2006526070A (ja) * | 2003-05-09 | 2006-11-16 | ビーエーエスエフ アクチェンゲゼルシャフト | 半導体工業に使用するための三成分系材料を無電解メッキする組成物 |
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KR100876646B1 (ko) | 2009-01-09 |
US20080265006A1 (en) | 2008-10-30 |
JP2008285752A (ja) | 2008-11-27 |
KR20080096264A (ko) | 2008-10-30 |
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