JP2008285752A - 脆性破壊を防止するための無電解NiXPで表面処理された電子部品の接合方法 - Google Patents
脆性破壊を防止するための無電解NiXPで表面処理された電子部品の接合方法 Download PDFInfo
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Abstract
【解決手段】電子部品に無電解NiXP(X=W、Mo、Co、Ti、Zr、Zn、V、Cr、Fe、Nb、Re、Mn、Tl、Cuから選ばれる少なくとも1種)メッキを施して金属層を形成する段階と、該無電解NiXP層上にはんだをリフローし接合する段階とから構成し、はんだ接合部で発生する脆性破壊を防止する方法を達成する。
【選択図】図3
Description
先ず、本発明は、無電解ニッケルにより表面処理された電子部品を接合する場合に生じる、脆性破壊を防止することができる方法であって、無電解ニッケルメッキ浴に、Ni3PとNiSnP層の形成を抑制する元素の塩を添加してNiXP(Xは、W、Mo、Co、Ti、Zr、Zn、V、Cr、Fe、Nb、Re、Mn、Tl及びCuから選ばれる少なくとも1種の金属原子) UBMを形成し、無鉛はんだをNiXP UBMにリフローして両側の印刷回路基板を相互接合させることを特徴として構成される。
図11は、脆性破壊が発生した比較試片の断面写真であって、従来報告された内容と同様に金属間化合物がスポーリングされ、NiSnP層において脆性破壊が発生したことを示している。一方、無電解ニッケル層にタングステンを添加してUBMを形成した場合は、400回以上のドロップにおいても脆性破壊が発生していないことを確認することができた。
12:金属配線
14:無電解Ni−W−P
16:はんだマスク
18:Ni3Sn4金属間化合物
20:Sn3.5Agはんだ
22:印刷回路基板
Claims (6)
- はんだを利用して電子部品を接合するときの脆性破壊を防止する接合方法において、
電子部品の金属配線に無電解NiXP(Xは、W、Mo、Co、Ti、Zr、Zn、V、Cr、Fe、Nb、Re、Mn、Tl及びCuから選ばれる少なくとも1種の金属原子)金属層を形成する段階と、無鉛はんだを無電解NiXP層上にリフローして接合する段階を包含してなるはんだ接合部の脆性破壊を防止する無電解NiXPで表面処理された電子部品の接合方法。 - 電子部品の接合が、半導体チップとパッケージ部品、パッケージ部品と印刷回路基板、または半導体チップと印刷回路基板との接合であることを特徴とする請求項1に記載の無電解NiXPで表面処理された電子部品の接合方法。
- 無鉛はんだが、SnAg、SnAgCu、SnAgZn、SnAgAl、SnAgBe、SnAgSi、SnAgGe、SnAgMg、SnCu、SnBi、SnZnまたはSnZnBi系のはんだであり、Ag 0〜10wt%、Zn 1〜7wt%、Al 1〜5wt%、Be 1〜5wt%、Si 8〜15wt%、Ge 8〜15wt%、Mg 1〜7wt%、Cu 0〜2wt%、Bi 0〜58wt%及びZn 0〜10wt%であることを特徴とする請求項1又は2に記載の無電解NiXPで表面処理された電子部品の接合方法。
- 無電解ニッケルメッキ浴にW、Mo、Co、Ti、Zr、Zn、V、Cr、Fe、Nb、Re、Mn、TlまたはCuを包含する金属塩を添加して無電解NiXP(Xは、W、Mo、Co、Ti、Zr、Zn、V、Cr、Fe、Nb、Re、Mn、Tl及びCuから選ばれる少なくとも1種の金属原子)金属層でメッキすることを特徴とする請求項1〜3のいずれかに記載の電子部品の接合方法。
- 無電解NiXP薄膜における元素の組成範囲が、W 1〜20wt%、Mo 1〜30wt%、Co 1〜50wt%、Zn 1〜10wt%、Fe 1〜40wt%、Re 1〜50wt%、Mn 0.5〜5wt%、Cr 0.5〜10wt%、Tl 1〜20wt%、Cu 1〜20wt%、Ti 1〜20wt%、Zr 1〜20wt%、V 1〜20wt%、及びNb 1〜20wt%であることを特徴とする請求項4に記載の電子部品の接合方法。
- 無電解NiXP(Xは、W、Mo、Co、Ti、Zr、Zn、V、Cr、Fe、Nb、Re、Mn、Tl及びCuから選ばれる少なくとも1種の金属原子)下部金属層(UBM)上に、はんだとの湿潤性を向上させるとともに、NiXPの酸化を防止するために、厚さ1μm以下のAu、Ag、またはPdをさらに蒸着することを特徴とする請求項1〜5のいずれかに記載の電子部品の接合方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020070041498A KR100876646B1 (ko) | 2007-04-27 | 2007-04-27 | 취성파괴 방지를 위한 무전해 NiXP로 표면처리된전자부품의 접합 방법 |
KR10-2007-0041498 | 2007-04-27 |
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JP2008285752A true JP2008285752A (ja) | 2008-11-27 |
JP4719766B2 JP4719766B2 (ja) | 2011-07-06 |
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JP2008111954A Expired - Fee Related JP4719766B2 (ja) | 2007-04-27 | 2008-04-23 | 脆性破壊を防止するための無電解NiXPで表面処理された電子部品の接合方法 |
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US (1) | US20080265006A1 (ja) |
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JP2010234401A (ja) * | 2009-03-31 | 2010-10-21 | Dowa Metaltech Kk | ろう材、ろう材の接合方法及びろう材接合基板 |
CN101554686B (zh) * | 2009-05-15 | 2011-11-16 | 西安理工大学 | 用于焊接硬质合金与钢的高熵合金钎料及制备方法 |
JP2012043880A (ja) * | 2010-08-17 | 2012-03-01 | Tdk Corp | 端子構造、プリント配線板、モジュール基板及び電子デバイス |
JP2012043881A (ja) * | 2010-08-17 | 2012-03-01 | Tdk Corp | 端子構造、プリント配線板、モジュール基板及び電子デバイス |
JP2012190886A (ja) * | 2011-03-09 | 2012-10-04 | Seiko Instruments Inc | 電子部品およびその製造方法 |
JP2015115363A (ja) * | 2013-12-09 | 2015-06-22 | 富士通株式会社 | 電子装置及び電子装置の製造方法 |
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JP5638144B2 (ja) * | 2011-09-16 | 2014-12-10 | パナソニック株式会社 | 実装構造およびその製造方法 |
US10180035B2 (en) * | 2013-04-01 | 2019-01-15 | Schlumberger Technology Corporation | Soldered components for downhole use |
EP3067142B1 (en) * | 2015-03-12 | 2020-08-26 | Services Pétroliers Schlumberger | Soldered components for downhole use |
CN106282660A (zh) * | 2016-08-15 | 2017-01-04 | 苏州润利电器有限公司 | 一种电器配件用双层复合高性能合金 |
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US20030007885A1 (en) * | 1999-03-16 | 2003-01-09 | Shinjiro Domi | Lead-free solder |
JP2001210843A (ja) * | 1999-11-17 | 2001-08-03 | Fuji Mach Mfg Co Ltd | 光発電パネルおよびその製造方法 |
US20060024943A1 (en) * | 2004-07-30 | 2006-02-02 | Kang Sung K | Prevention and control of intermetallic alloy inclusions that form during reflow of Pb free, Sn rich, solders in contacts in microelectronic packaging in integrated circuit contact structures where electroless Ni(P) metallization is present |
KR100718169B1 (ko) * | 2006-01-12 | 2007-05-15 | 한국과학기술원 | 니켈 표면 처리된 전자부품과 무전해 니켈 표면 처리된전자부품의 접합방법 |
US20080248194A1 (en) * | 2007-04-04 | 2008-10-09 | L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for producing a copper layer on a substrate in a flat panel display manufacturing process |
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JPH08130227A (ja) * | 1994-10-31 | 1996-05-21 | World Metal:Kk | 半導体チップ、半導体チップの端子の形成方法及び半導体チップの接合方法 |
JP2002256444A (ja) * | 2001-03-05 | 2002-09-11 | Okuno Chem Ind Co Ltd | 配線基板 |
JP2003324124A (ja) * | 2002-02-28 | 2003-11-14 | Hitachi Ltd | 半導体装置及び電子装置の製造方法、接続条件の算出方法 |
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JP2010234401A (ja) * | 2009-03-31 | 2010-10-21 | Dowa Metaltech Kk | ろう材、ろう材の接合方法及びろう材接合基板 |
CN101554686B (zh) * | 2009-05-15 | 2011-11-16 | 西安理工大学 | 用于焊接硬质合金与钢的高熵合金钎料及制备方法 |
JP2012043880A (ja) * | 2010-08-17 | 2012-03-01 | Tdk Corp | 端子構造、プリント配線板、モジュール基板及び電子デバイス |
JP2012043881A (ja) * | 2010-08-17 | 2012-03-01 | Tdk Corp | 端子構造、プリント配線板、モジュール基板及び電子デバイス |
JP2012190886A (ja) * | 2011-03-09 | 2012-10-04 | Seiko Instruments Inc | 電子部品およびその製造方法 |
JP2015115363A (ja) * | 2013-12-09 | 2015-06-22 | 富士通株式会社 | 電子装置及び電子装置の製造方法 |
Also Published As
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KR20080096264A (ko) | 2008-10-30 |
US20080265006A1 (en) | 2008-10-30 |
KR100876646B1 (ko) | 2009-01-09 |
JP4719766B2 (ja) | 2011-07-06 |
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