JP4718818B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

Info

Publication number
JP4718818B2
JP4718818B2 JP2004297094A JP2004297094A JP4718818B2 JP 4718818 B2 JP4718818 B2 JP 4718818B2 JP 2004297094 A JP2004297094 A JP 2004297094A JP 2004297094 A JP2004297094 A JP 2004297094A JP 4718818 B2 JP4718818 B2 JP 4718818B2
Authority
JP
Japan
Prior art keywords
mask
conductive layer
layer
semiconductor layer
droplet discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004297094A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005136403A (ja
JP2005136403A5 (enExample
Inventor
慎志 前川
馨太郎 今井
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004297094A priority Critical patent/JP4718818B2/ja
Publication of JP2005136403A publication Critical patent/JP2005136403A/ja
Publication of JP2005136403A5 publication Critical patent/JP2005136403A5/ja
Application granted granted Critical
Publication of JP4718818B2 publication Critical patent/JP4718818B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004297094A 2003-10-10 2004-10-12 薄膜トランジスタの作製方法 Expired - Fee Related JP4718818B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004297094A JP4718818B2 (ja) 2003-10-10 2004-10-12 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003351974 2003-10-10
JP2003351974 2003-10-10
JP2004297094A JP4718818B2 (ja) 2003-10-10 2004-10-12 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2005136403A JP2005136403A (ja) 2005-05-26
JP2005136403A5 JP2005136403A5 (enExample) 2007-08-30
JP4718818B2 true JP4718818B2 (ja) 2011-07-06

Family

ID=34656092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004297094A Expired - Fee Related JP4718818B2 (ja) 2003-10-10 2004-10-12 薄膜トランジスタの作製方法

Country Status (1)

Country Link
JP (1) JP4718818B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008226993A (ja) * 2007-03-09 2008-09-25 Advanced Lcd Technologies Development Center Co Ltd 半導体装置及びその製造方法
CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
JP2012164876A (ja) * 2011-02-08 2012-08-30 Mitsubishi Chemicals Corp 配線又は電極の形成方法、電子デバイス及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140466A (ja) * 1985-12-16 1987-06-24 Matsushita Electric Ind Co Ltd 薄膜トランジスタ回路の製造方法
JPS62263676A (ja) * 1986-05-09 1987-11-16 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
JPH11340129A (ja) * 1998-05-28 1999-12-10 Seiko Epson Corp パターン製造方法およびパターン製造装置
JP2003179234A (ja) * 2001-09-05 2003-06-27 Konica Corp 有機半導体素子およびその製造方法

Also Published As

Publication number Publication date
JP2005136403A (ja) 2005-05-26

Similar Documents

Publication Publication Date Title
KR101030698B1 (ko) 반도체 장치 제조방법
US7365805B2 (en) Display device, manufacturing method thereof, and television receiver
US9237657B2 (en) Wiring substrate, semiconductor device, and method for manufacturing thereof
US7795730B2 (en) Wiring substrate and method of manufacturing thereof, and thin film transistor and method of manufacturing thereof
US7955907B2 (en) Semiconductor device, television set, and method for manufacturing the same
JP4731970B2 (ja) 発光装置及びその作製方法
JP4498715B2 (ja) 半導体装置の作製方法
JP4554292B2 (ja) 薄膜トランジスタの作製方法
JP4877866B2 (ja) 半導体装置の作製方法
JP4737971B2 (ja) 液晶表示装置および液晶表示装置の作製方法
JP4718818B2 (ja) 薄膜トランジスタの作製方法
JP4877868B2 (ja) 表示装置の作製方法
JP4741218B2 (ja) 液晶表示装置及びその作製方法、並びに液晶テレビ受像機
JP4884675B2 (ja) 半導体装置の作製方法
JP4817627B2 (ja) 表示装置の作製方法
JP4597627B2 (ja) 配線基板の作製方法
JP4712332B2 (ja) 薄膜トランジスタの作製方法
JP4624078B2 (ja) 液晶表示装置の作製方法
JP4683898B2 (ja) 半導体装置の作製方法
JP4916653B2 (ja) 配線基板の作製方法及び半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070712

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070712

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101022

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110308

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110329

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110401

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140408

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140408

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees