JP4715370B2 - 発光素子及びその製造方法 - Google Patents

発光素子及びその製造方法 Download PDF

Info

Publication number
JP4715370B2
JP4715370B2 JP2005221662A JP2005221662A JP4715370B2 JP 4715370 B2 JP4715370 B2 JP 4715370B2 JP 2005221662 A JP2005221662 A JP 2005221662A JP 2005221662 A JP2005221662 A JP 2005221662A JP 4715370 B2 JP4715370 B2 JP 4715370B2
Authority
JP
Japan
Prior art keywords
compound semiconductor
main surface
main
substrate
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2005221662A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007042664A5 (es
JP2007042664A (ja
Inventor
和徳 萩本
雅人 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2005221662A priority Critical patent/JP4715370B2/ja
Priority to TW95126140A priority patent/TWI405350B/zh
Publication of JP2007042664A publication Critical patent/JP2007042664A/ja
Publication of JP2007042664A5 publication Critical patent/JP2007042664A5/ja
Application granted granted Critical
Publication of JP4715370B2 publication Critical patent/JP4715370B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Led Devices (AREA)
JP2005221662A 2005-07-29 2005-07-29 発光素子及びその製造方法 Active JP4715370B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005221662A JP4715370B2 (ja) 2005-07-29 2005-07-29 発光素子及びその製造方法
TW95126140A TWI405350B (zh) 2005-07-29 2006-07-18 Light emitting element and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005221662A JP4715370B2 (ja) 2005-07-29 2005-07-29 発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2007042664A JP2007042664A (ja) 2007-02-15
JP2007042664A5 JP2007042664A5 (es) 2008-05-08
JP4715370B2 true JP4715370B2 (ja) 2011-07-06

Family

ID=37800405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005221662A Active JP4715370B2 (ja) 2005-07-29 2005-07-29 発光素子及びその製造方法

Country Status (2)

Country Link
JP (1) JP4715370B2 (es)
TW (1) TWI405350B (es)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016079929A1 (ja) * 2014-11-21 2017-06-15 信越半導体株式会社 発光素子及び発光素子の製造方法
US10388831B2 (en) 2015-01-09 2019-08-20 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method for manufacturing light-emitting device
DE112015004661B4 (de) 2014-11-07 2022-10-27 Shin-Etsu Handotai Co., Ltd. Lichtemittierende Vorrichtung und Verfahren zum Herstellen einer lichtemittierenden Vorrichtung

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4903643B2 (ja) * 2007-07-12 2012-03-28 株式会社東芝 半導体発光素子
TWI387128B (zh) * 2007-08-23 2013-02-21 Epistar Corp 發光元件及其製造方法
JP5226497B2 (ja) * 2008-08-21 2013-07-03 スタンレー電気株式会社 光半導体装置及びその製造方法
JP2011077496A (ja) * 2009-04-28 2011-04-14 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
US8017958B2 (en) * 2009-06-30 2011-09-13 Koninklijke Philips Electronics N.V. P-contact layer for a III-P semiconductor light emitting device
JP5557649B2 (ja) 2010-01-25 2014-07-23 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
JP5725022B2 (ja) 2010-05-31 2015-05-27 日亜化学工業株式会社 発光装置及びその製造方法
CN108269756A (zh) * 2011-08-30 2018-07-10 皇家飞利浦有限公司 将衬底接合到半导体发光器件的方法
CN104319326B (zh) * 2014-10-21 2017-05-17 厦门市三安光电科技有限公司 一种发光二极管的制造方法
KR101818725B1 (ko) * 2017-09-11 2018-01-15 주식회사 레이아이알 수직 공동 표면 방출 레이저
JP6708270B2 (ja) * 2019-01-15 2020-06-10 信越半導体株式会社 発光素子
CN111847377A (zh) * 2020-08-03 2020-10-30 中国计量大学 一种硅基mems微半球阵列的制备方法
WO2022092895A1 (ko) * 2020-10-29 2022-05-05 웨이브로드 주식회사 반도체 발광소자 및 이를 제조하는 방법
CN117813674A (zh) * 2021-08-17 2024-04-02 信越半导体株式会社 暂时接合晶圆及其制造方法
TWM645474U (zh) * 2021-09-29 2023-09-01 日商信越半導體股份有限公司 接合體、接合型晶圓、剝離系統及製造系統

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332529A (ja) * 2000-05-19 2001-11-30 Daido Steel Co Ltd 単結晶半導体基板の表面処理方法、および単結晶半導体基板の電極層形成方法
JP2002158373A (ja) * 2000-11-07 2002-05-31 Kokuren Koden Kagi Kofun Yugenkoshi 発光ダイオード及び発光ダイオードの製造方法
JP2005005345A (ja) * 2003-06-10 2005-01-06 Toshiba Corp 半導体発光素子及びその製造方法並びに半導体発光装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100599332B1 (ko) * 2003-07-01 2006-07-12 디비닥시스템즈코리아 주식회사 열처리 방식을 이용한 제거식 그라운드 앵커

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332529A (ja) * 2000-05-19 2001-11-30 Daido Steel Co Ltd 単結晶半導体基板の表面処理方法、および単結晶半導体基板の電極層形成方法
JP2002158373A (ja) * 2000-11-07 2002-05-31 Kokuren Koden Kagi Kofun Yugenkoshi 発光ダイオード及び発光ダイオードの製造方法
JP2005005345A (ja) * 2003-06-10 2005-01-06 Toshiba Corp 半導体発光素子及びその製造方法並びに半導体発光装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112015004661B4 (de) 2014-11-07 2022-10-27 Shin-Etsu Handotai Co., Ltd. Lichtemittierende Vorrichtung und Verfahren zum Herstellen einer lichtemittierenden Vorrichtung
JPWO2016079929A1 (ja) * 2014-11-21 2017-06-15 信越半導体株式会社 発光素子及び発光素子の製造方法
US10388831B2 (en) 2015-01-09 2019-08-20 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method for manufacturing light-emitting device

Also Published As

Publication number Publication date
TW200711178A (en) 2007-03-16
TWI405350B (zh) 2013-08-11
JP2007042664A (ja) 2007-02-15

Similar Documents

Publication Publication Date Title
JP4715370B2 (ja) 発光素子及びその製造方法
US7968361B2 (en) GaN based semiconductor light emitting device and lamp
JP4091261B2 (ja) 半導体発光素子及びその製造方法
JP4899348B2 (ja) 発光素子の製造方法
JP5250856B2 (ja) 窒化ガリウム系化合物半導体発光素子の製造方法
KR100992497B1 (ko) 발광 다이오드 및 그 제조 방법
US8022436B2 (en) Light emitting diode, production method thereof and lamp
JP2010098068A (ja) 発光ダイオード及びその製造方法、並びにランプ
JP2023014201A (ja) 半導体発光素子およびその製造方法
WO2020255976A1 (ja) 半導体光デバイスの製造方法及び半導体光デバイス
EP2985793A1 (en) Semiconductor light emitting element and method for manufacturing same
US20100078672A1 (en) Group III nitride semiconductor light-emitting device and production method therefor
JP2005150664A (ja) 発光素子及びその製造方法
JP2005259912A (ja) 発光素子の製造方法
JP2005277218A (ja) 発光素子及びその製造方法
JP2007258320A (ja) 発光素子
JP4569858B2 (ja) 発光素子の製造方法
JP4341623B2 (ja) 発光素子及びその製造方法
JP5287467B2 (ja) 発光素子の製造方法
JP2010199344A (ja) 発光素子の製造方法
JP4918245B2 (ja) 発光ダイオード及びその製造方法
JP2005347714A (ja) 発光素子及びその製造方法
JP4565320B2 (ja) 発光素子の製造方法
JP2006013381A (ja) 発光素子
JP2005079152A (ja) 半導体発光素子及びその製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080324

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080324

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101224

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110208

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110301

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110314

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140408

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250