JP4715370B2 - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
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- JP4715370B2 JP4715370B2 JP2005221662A JP2005221662A JP4715370B2 JP 4715370 B2 JP4715370 B2 JP 4715370B2 JP 2005221662 A JP2005221662 A JP 2005221662A JP 2005221662 A JP2005221662 A JP 2005221662A JP 4715370 B2 JP4715370 B2 JP 4715370B2
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005221662A JP4715370B2 (ja) | 2005-07-29 | 2005-07-29 | 発光素子及びその製造方法 |
TW95126140A TWI405350B (zh) | 2005-07-29 | 2006-07-18 | Light emitting element and manufacturing method thereof |
Applications Claiming Priority (1)
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JP2005221662A JP4715370B2 (ja) | 2005-07-29 | 2005-07-29 | 発光素子及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2007042664A JP2007042664A (ja) | 2007-02-15 |
JP2007042664A5 JP2007042664A5 (es) | 2008-05-08 |
JP4715370B2 true JP4715370B2 (ja) | 2011-07-06 |
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JP2005221662A Active JP4715370B2 (ja) | 2005-07-29 | 2005-07-29 | 発光素子及びその製造方法 |
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JP (1) | JP4715370B2 (es) |
TW (1) | TWI405350B (es) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2016079929A1 (ja) * | 2014-11-21 | 2017-06-15 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
US10388831B2 (en) | 2015-01-09 | 2019-08-20 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method for manufacturing light-emitting device |
DE112015004661B4 (de) | 2014-11-07 | 2022-10-27 | Shin-Etsu Handotai Co., Ltd. | Lichtemittierende Vorrichtung und Verfahren zum Herstellen einer lichtemittierenden Vorrichtung |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4903643B2 (ja) * | 2007-07-12 | 2012-03-28 | 株式会社東芝 | 半導体発光素子 |
TWI387128B (zh) * | 2007-08-23 | 2013-02-21 | Epistar Corp | 發光元件及其製造方法 |
JP5226497B2 (ja) * | 2008-08-21 | 2013-07-03 | スタンレー電気株式会社 | 光半導体装置及びその製造方法 |
JP2011077496A (ja) * | 2009-04-28 | 2011-04-14 | Shin Etsu Handotai Co Ltd | 発光素子および発光素子の製造方法 |
US8017958B2 (en) * | 2009-06-30 | 2011-09-13 | Koninklijke Philips Electronics N.V. | P-contact layer for a III-P semiconductor light emitting device |
JP5557649B2 (ja) | 2010-01-25 | 2014-07-23 | 昭和電工株式会社 | 発光ダイオード、発光ダイオードランプ及び照明装置 |
JP5725022B2 (ja) | 2010-05-31 | 2015-05-27 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
CN108269756A (zh) * | 2011-08-30 | 2018-07-10 | 皇家飞利浦有限公司 | 将衬底接合到半导体发光器件的方法 |
CN104319326B (zh) * | 2014-10-21 | 2017-05-17 | 厦门市三安光电科技有限公司 | 一种发光二极管的制造方法 |
KR101818725B1 (ko) * | 2017-09-11 | 2018-01-15 | 주식회사 레이아이알 | 수직 공동 표면 방출 레이저 |
JP6708270B2 (ja) * | 2019-01-15 | 2020-06-10 | 信越半導体株式会社 | 発光素子 |
CN111847377A (zh) * | 2020-08-03 | 2020-10-30 | 中国计量大学 | 一种硅基mems微半球阵列的制备方法 |
WO2022092895A1 (ko) * | 2020-10-29 | 2022-05-05 | 웨이브로드 주식회사 | 반도체 발광소자 및 이를 제조하는 방법 |
CN117813674A (zh) * | 2021-08-17 | 2024-04-02 | 信越半导体株式会社 | 暂时接合晶圆及其制造方法 |
TWM645474U (zh) * | 2021-09-29 | 2023-09-01 | 日商信越半導體股份有限公司 | 接合體、接合型晶圓、剝離系統及製造系統 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001332529A (ja) * | 2000-05-19 | 2001-11-30 | Daido Steel Co Ltd | 単結晶半導体基板の表面処理方法、および単結晶半導体基板の電極層形成方法 |
JP2002158373A (ja) * | 2000-11-07 | 2002-05-31 | Kokuren Koden Kagi Kofun Yugenkoshi | 発光ダイオード及び発光ダイオードの製造方法 |
JP2005005345A (ja) * | 2003-06-10 | 2005-01-06 | Toshiba Corp | 半導体発光素子及びその製造方法並びに半導体発光装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100599332B1 (ko) * | 2003-07-01 | 2006-07-12 | 디비닥시스템즈코리아 주식회사 | 열처리 방식을 이용한 제거식 그라운드 앵커 |
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2005
- 2005-07-29 JP JP2005221662A patent/JP4715370B2/ja active Active
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2006
- 2006-07-18 TW TW95126140A patent/TWI405350B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001332529A (ja) * | 2000-05-19 | 2001-11-30 | Daido Steel Co Ltd | 単結晶半導体基板の表面処理方法、および単結晶半導体基板の電極層形成方法 |
JP2002158373A (ja) * | 2000-11-07 | 2002-05-31 | Kokuren Koden Kagi Kofun Yugenkoshi | 発光ダイオード及び発光ダイオードの製造方法 |
JP2005005345A (ja) * | 2003-06-10 | 2005-01-06 | Toshiba Corp | 半導体発光素子及びその製造方法並びに半導体発光装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112015004661B4 (de) | 2014-11-07 | 2022-10-27 | Shin-Etsu Handotai Co., Ltd. | Lichtemittierende Vorrichtung und Verfahren zum Herstellen einer lichtemittierenden Vorrichtung |
JPWO2016079929A1 (ja) * | 2014-11-21 | 2017-06-15 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
US10388831B2 (en) | 2015-01-09 | 2019-08-20 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method for manufacturing light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
TW200711178A (en) | 2007-03-16 |
TWI405350B (zh) | 2013-08-11 |
JP2007042664A (ja) | 2007-02-15 |
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