JP4711317B2 - 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 - Google Patents
位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 Download PDFInfo
- Publication number
- JP4711317B2 JP4711317B2 JP2009013890A JP2009013890A JP4711317B2 JP 4711317 B2 JP4711317 B2 JP 4711317B2 JP 2009013890 A JP2009013890 A JP 2009013890A JP 2009013890 A JP2009013890 A JP 2009013890A JP 4711317 B2 JP4711317 B2 JP 4711317B2
- Authority
- JP
- Japan
- Prior art keywords
- phase shift
- shift mask
- film
- light semi
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000010363 phase shift Effects 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 21
- 238000012546 transfer Methods 0.000 title claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 96
- 229910052710 silicon Inorganic materials 0.000 claims description 73
- 239000010703 silicon Substances 0.000 claims description 73
- 238000002834 transmittance Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 50
- 238000010438 heat treatment Methods 0.000 claims description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 30
- 229910052750 molybdenum Inorganic materials 0.000 claims description 30
- 239000011733 molybdenum Substances 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 133
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 70
- 239000010409 thin film Substances 0.000 description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 32
- 229910052760 oxygen Inorganic materials 0.000 description 32
- 239000001301 oxygen Substances 0.000 description 32
- 239000010410 layer Substances 0.000 description 28
- 239000000126 substance Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 22
- 239000010453 quartz Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 239000002356 single layer Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000005546 reactive sputtering Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- -1 MoSiN Inorganic materials 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001845 chromium compounds Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910021563 chromium fluoride Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009013890A JP4711317B2 (ja) | 2000-09-12 | 2009-01-26 | 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000277215 | 2000-09-12 | ||
| JP2000277215 | 2000-09-12 | ||
| JP2009013890A JP4711317B2 (ja) | 2000-09-12 | 2009-01-26 | 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005217408A Division JP4322848B2 (ja) | 2000-09-12 | 2005-07-27 | 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009104174A JP2009104174A (ja) | 2009-05-14 |
| JP2009104174A5 JP2009104174A5 (enExample) | 2009-07-02 |
| JP4711317B2 true JP4711317B2 (ja) | 2011-06-29 |
Family
ID=40705840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009013890A Expired - Lifetime JP4711317B2 (ja) | 2000-09-12 | 2009-01-26 | 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4711317B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5644293B2 (ja) * | 2010-09-10 | 2014-12-24 | 信越化学工業株式会社 | 遷移金属ケイ素系材料膜の設計方法 |
| KR101269062B1 (ko) | 2012-06-29 | 2013-05-29 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법 |
| US9625806B2 (en) * | 2013-01-15 | 2017-04-18 | Hoya Corporation | Mask blank, phase-shift mask, and method for manufacturing the same |
| JP2014209200A (ja) * | 2013-03-22 | 2014-11-06 | Hoya株式会社 | マスクブランクの製造方法および転写用マスクの製造方法 |
| JP6287932B2 (ja) * | 2015-03-31 | 2018-03-07 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランクの製造方法 |
| EP3086174B1 (en) * | 2015-03-31 | 2017-11-15 | Shin-Etsu Chemical Co., Ltd. | Method for preparing halftone phase shift photomask blank |
| JP5962811B2 (ja) * | 2015-04-22 | 2016-08-03 | 信越化学工業株式会社 | 光パターン照射方法 |
| US11054735B2 (en) * | 2016-07-19 | 2021-07-06 | Hoya Corporation | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| JP6430666B2 (ja) * | 2016-09-26 | 2018-11-28 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
| US20180335692A1 (en) * | 2017-05-18 | 2018-11-22 | S&S Tech Co., Ltd. | Phase-shift blankmask and phase-shift photomask |
| JP7073246B2 (ja) * | 2018-02-27 | 2022-05-23 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスクの製造方法、及び表示装置の製造方法 |
| JP7192731B2 (ja) * | 2019-09-27 | 2022-12-20 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06258817A (ja) * | 1993-03-05 | 1994-09-16 | Toppan Printing Co Ltd | 位相シフトマスクおよびそれに用いるブランクならびにそれらの製造方法 |
| JP3253783B2 (ja) * | 1993-08-13 | 2002-02-04 | 株式会社東芝 | ハーフトーン型位相シフトマスクとその製造方法 |
| JP3594659B2 (ja) * | 1994-09-08 | 2004-12-02 | アルバック成膜株式会社 | 位相シフトフォトマスクブランクス製造方法、位相シフトフォトマスクブランクス、及び位相シフトフォトマスク |
| JP3397933B2 (ja) * | 1995-03-24 | 2003-04-21 | アルバック成膜株式会社 | 位相シフトフォトマスクブランクス、位相シフトフォトマスク、及びそれらの製造方法。 |
| JPH1020471A (ja) * | 1996-07-02 | 1998-01-23 | Toshiba Corp | 露光マスクの製造方法 |
| JPH11258772A (ja) * | 1998-03-16 | 1999-09-24 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク用ブランクス及びハーフトーン型位相シフトマスク |
| JP2983020B1 (ja) * | 1998-12-18 | 1999-11-29 | ホーヤ株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
-
2009
- 2009-01-26 JP JP2009013890A patent/JP4711317B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009104174A (ja) | 2009-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3722029B2 (ja) | 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法 | |
| JP4711317B2 (ja) | 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 | |
| JP5412507B2 (ja) | マスクブランクおよび転写用マスク | |
| JP4933753B2 (ja) | 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法 | |
| JP5702920B2 (ja) | 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法 | |
| KR101255414B1 (ko) | 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법 | |
| JP2966369B2 (ja) | 位相シフトマスク、及び位相シフトマスクブランク | |
| JP7106492B2 (ja) | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 | |
| JP5666218B2 (ja) | マスクブランク、転写用マスク、および転写用マスクセット | |
| JP4707922B2 (ja) | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク | |
| JP7176843B2 (ja) | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 | |
| JP3993005B2 (ja) | ハーフトーン型位相シフトマスクブランク、ハーフトーン型位相シフトマスク及びその製造方法、並びにパターン転写方法 | |
| TWI758382B (zh) | 相移光罩基底、相移光罩之製造方法、及顯示裝置之製造方法 | |
| JP2022191475A (ja) | フォトマスクブランク、フォトマスクの製造方法、及び表示装置の製造方法 | |
| JP2989156B2 (ja) | スパッタターゲット、該スパッタターゲットを用いた位相シフトマスクブランク及び位相シフトマスクの製造方法 | |
| JP4322848B2 (ja) | 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 | |
| JP2005062894A (ja) | 位相シフトマスクブランクス及び位相シフトマスク | |
| JP3214840B2 (ja) | 位相シフトマスクの製造方法、及び位相シフトマスクブランクの製造方法 | |
| JP5177567B2 (ja) | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク | |
| JP4332697B2 (ja) | スパッタターゲット | |
| JP4014922B2 (ja) | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク | |
| JP3090651B2 (ja) | 位相シフトマスクの製造方法 | |
| CN108319104B (zh) | 显示装置制造用相移掩模坯料、显示装置制造用相移掩模的制造方法及显示装置的制造方法 | |
| JP4202952B2 (ja) | 位相シフトマスクブランクおよび位相シフトマスク並びに位相シフトマスクブランクの製造方法および位相シフトマスクの製造方法 | |
| JP6720360B2 (ja) | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090427 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110316 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110316 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4711317 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |