JP4698296B2 - 貫通電極を有する半導体装置の製造方法 - Google Patents
貫通電極を有する半導体装置の製造方法 Download PDFInfo
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- JP4698296B2 JP4698296B2 JP2005178534A JP2005178534A JP4698296B2 JP 4698296 B2 JP4698296 B2 JP 4698296B2 JP 2005178534 A JP2005178534 A JP 2005178534A JP 2005178534 A JP2005178534 A JP 2005178534A JP 4698296 B2 JP4698296 B2 JP 4698296B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
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- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
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- 238000000034 method Methods 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 9
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- 239000011651 chromium Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
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- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 33
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- 229910052782 aluminium Inorganic materials 0.000 description 18
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- 238000011161 development Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- ZXVONLUNISGICL-UHFFFAOYSA-N 4,6-dinitro-o-cresol Chemical compound CC1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1O ZXVONLUNISGICL-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Description
前記デバイス層及び前記電極パッドは、両者とも、前記半導体基板上の前記第1の絶縁膜上に形成されることを特徴とする。或いは、前記デバイス層は前記半導体基板上に直接形成され、一方前記電極パッドは前記半導体基板の前記第1の絶縁膜上に形成されることを特徴とする。
この後、所定部分で半導体ウェハをダイシングし、半導体装置を得る。
また、上述の実施形態では、デバイス層33及び電極(アルミニウム)パッド34が両者ともシリコン基板31上の第1の絶縁膜(酸化膜32)上に形成される場合について説明した。しかし、トランジスタ等、デバイスによっては、シリコン基板31上に直接デバイス層33が形成される場合もある。なお、この場合は、電極パッド34の下方には、第1の絶縁膜(酸化膜32)が形成される。
32 酸化膜(SiO2膜)
33 デバイス層
34 アルミニウムパッド
35 パッシベーション膜
36 貫通孔
37 レジスト層
38 絶縁膜
39 金属(Cr/Cu)膜
40 保護膜
42 銅めっき(貫通電極)
Claims (9)
- 一方の面に、デバイス層及び該デバイス層に電気的に接続する電極パッドが形成された半導体基板を準備し、該電極パッド、該電極パッドの下方に形成された第1の絶縁膜、及び基板自体を貫通する貫通孔を形成する工程と、
該基板の一方の面に前記貫通孔を塞がないように第1の金属層を形成すると共に、該第1の金属層上から前記貫通孔を塞ぐように該基板の一方の面の全面に絶縁保護膜を張り付ける工程と、
該第1金属層を給電層として、前記基板の他方の面より第2の金属で電解めっきを施すことにより、前記貫通孔内を該第2の金属で充填して貫通電極を形成する工程と、
前記絶縁保護膜を剥離する工程と、
前記貫通電極の周辺部以外の領域にある前記第1の金属層を除去する工程と、
を含むことを特徴とする貫通電極を有する半導体装置の製造方法。 - 前記基板自体に貫通孔が形成される前に、前記電極パッドにエッチングにより前記第1の絶縁膜が露出する第1の開口部が形成され、該第1の開口部から露出する前記第1の絶縁膜にエッチングを施すことにより前記半導体基板が露出する第1の開口部より小さな領域の第2の開口部が形成され、該第2の開口部から露出する前記半導体基板にエッチングを施すことにより第2の開口部より小さな断面領域の前記基板自体に貫通孔が形成されることを特徴とする請求項1に記載の貫通電極を有する半導体装置の製造方法。
- 前記貫通孔が形成された後、該基板の一方の面に第1の金属層が形成される前に、前記貫通孔の内壁を含む基板の全面に第2の絶縁膜が形成されることを特徴とする請求項1に記載の貫通電極を有する半導体装置の製造方法。
- 前記基板の一方の面に前記貫通孔の周辺部を除いてレジストが形成され、その後、前記貫通孔の内壁を含む配線基板の全面に前記第2の絶縁膜が形成され、更にその後、前記レジスト及び該レジスト上の前記第2の絶縁膜が剥離され、その後前記第1の金属層が形成されることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記貫通孔の内壁を含む基板の全面に前記第2の絶縁膜が形成され、その後、前記基板の一方の面の前記貫通孔の周辺部にレジストが形成され、該レジストに覆われていない前記第2の絶縁膜をエッチングにより剥離した後、前記レジストが除去され、その後前記第1の金属層が形成されることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記第1の金属層は、クロム及び銅のスパッタリングにより形成したものであり、第2の金属は、銅めっきであることを特徴とする請求項1に記載の半導体装置の製造方法。
- 半導体基板の一方の面に、デバイス層を形成する共に、該デバイス層と電気的に接続する電極パッドを該デバイス層の周囲に形成する工程と、
前記電極パッド、該電極パッドの下方に設けられた第1の絶縁膜及び半導体基板を貫通する貫通孔を形成する工程と、
前記貫通孔の内壁面、前記第1の絶縁膜及び電極パッドの開口部を含む全面を第2の絶縁膜で覆う工程と、
前記電極パッドの上面の少なくとも一部の領域について前記第2の絶縁膜を除去する工程と、
少なくとも前記貫通孔の開口部周辺を覆うと共に、一部が前記電極パッドに電気的に導通するように、前記半導体基板の一方の面側より第1の金属層を形成する工程と、
前記第1の金属層の上から前記貫通孔を塞ぐように絶縁テープを前記基板の一方の面の全面に貼付する工程と、
前記第1の金属層を給電層として、前記半導体基板の他方の面より第2の金属で電解めっきを施して、貫通孔内を第2の金属で充填し、貫通電極を形成する工程と、
前記絶縁テープを剥離する工程と、
前記貫通電極の周辺部以外の領域にある前記第1の金属層を除去する工程と、
を含むことを特徴とする貫通電極を有する半導体装置の製造方法。 - 前記デバイス層及び前記電極パッドは、両者とも、前記半導体基板上の前記第1の絶縁膜上に形成されることを特徴とする請求項7に記載の配線基板の製造方法。
- 前記デバイス層は前記半導体基板上に直接形成され、一方前記電極パッドは前記半導体基板の前記第1の絶縁膜上に形成されることを特徴とする請求項7に記載の半導体装置の製造方法。
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JP2005178534A JP4698296B2 (ja) | 2005-06-17 | 2005-06-17 | 貫通電極を有する半導体装置の製造方法 |
US11/424,385 US7524753B2 (en) | 2005-06-17 | 2006-06-15 | Semiconductor device having through electrode and method of manufacturing the same |
TW095121568A TW200707643A (en) | 2005-06-17 | 2006-06-16 | Semiconductor device having through electrode and method of manufacturing the same |
CNA200610086505XA CN1881535A (zh) | 2005-06-17 | 2006-06-16 | 具有穿透电极的半导体器件及其制造方法 |
KR1020060054365A KR20060132490A (ko) | 2005-06-17 | 2006-06-16 | 관통 전극을 갖는 반도체 장치 및 그 제조 방법 |
EP06012546A EP1734576A1 (en) | 2005-06-17 | 2006-06-19 | Semiconductor device having through electrode and method of manufacturing the same |
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JP2004327910A (ja) * | 2003-04-28 | 2004-11-18 | Sharp Corp | 半導体装置およびその製造方法 |
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TW200707643A (en) | 2007-02-16 |
KR20060132490A (ko) | 2006-12-21 |
CN1881535A (zh) | 2006-12-20 |
US7524753B2 (en) | 2009-04-28 |
JP2006351968A (ja) | 2006-12-28 |
EP1734576A1 (en) | 2006-12-20 |
US20060286789A1 (en) | 2006-12-21 |
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