JP4681938B2 - ナノ構造体の製造方法 - Google Patents

ナノ構造体の製造方法 Download PDF

Info

Publication number
JP4681938B2
JP4681938B2 JP2005151339A JP2005151339A JP4681938B2 JP 4681938 B2 JP4681938 B2 JP 4681938B2 JP 2005151339 A JP2005151339 A JP 2005151339A JP 2005151339 A JP2005151339 A JP 2005151339A JP 4681938 B2 JP4681938 B2 JP 4681938B2
Authority
JP
Japan
Prior art keywords
film
nanostructure
layer
alloy
pores
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005151339A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006326723A (ja
JP2006326723A5 (enExample
Inventor
滋 市原
達也 斉藤
透 田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005151339A priority Critical patent/JP4681938B2/ja
Publication of JP2006326723A publication Critical patent/JP2006326723A/ja
Publication of JP2006326723A5 publication Critical patent/JP2006326723A5/ja
Application granted granted Critical
Publication of JP4681938B2 publication Critical patent/JP4681938B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
JP2005151339A 2005-05-24 2005-05-24 ナノ構造体の製造方法 Expired - Fee Related JP4681938B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005151339A JP4681938B2 (ja) 2005-05-24 2005-05-24 ナノ構造体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005151339A JP4681938B2 (ja) 2005-05-24 2005-05-24 ナノ構造体の製造方法

Publications (3)

Publication Number Publication Date
JP2006326723A JP2006326723A (ja) 2006-12-07
JP2006326723A5 JP2006326723A5 (enExample) 2008-02-14
JP4681938B2 true JP4681938B2 (ja) 2011-05-11

Family

ID=37548975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005151339A Expired - Fee Related JP4681938B2 (ja) 2005-05-24 2005-05-24 ナノ構造体の製造方法

Country Status (1)

Country Link
JP (1) JP4681938B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5094208B2 (ja) * 2006-08-24 2012-12-12 キヤノン株式会社 構造体の製造方法
KR20080053571A (ko) * 2006-12-11 2008-06-16 광주과학기술원 전자현미경을 이용한 나노구조 분석 방법
ATE541303T1 (de) * 2008-01-11 2012-01-15 Uvis Light Ab Verfahren zur herstellung einer feldemissionsanzeige
JP5099836B2 (ja) * 2008-01-30 2012-12-19 株式会社高松メッキ 電子銃の製造方法
US8048546B2 (en) * 2009-12-16 2011-11-01 Hitachi Global Storage Technologies Netherlands B.V. Perpendicular magnetic recording disk with ordered nucleation layer and method for making the disk
WO2012054043A1 (en) 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L.P. Nano-structure and method of making the same
US20170267520A1 (en) 2010-10-21 2017-09-21 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
WO2012054044A1 (en) * 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L. P. Method of forming a micro-structure
WO2012054042A1 (en) 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L.P. Method of forming a nano-structure
US9410260B2 (en) 2010-10-21 2016-08-09 Hewlett-Packard Development Company, L.P. Method of forming a nano-structure
JP5824399B2 (ja) * 2012-03-30 2015-11-25 富士フイルム株式会社 ナノインプリント用樹脂モールドおよびその製造方法
KR102848243B1 (ko) * 2020-08-19 2025-08-20 (주)포인트엔지니어링 양극산화막 몰드 및 이를 포함하는 몰드구조체, 이를 이용한 성형물의 제조방법 및 그 성형물
KR20220049203A (ko) 2020-10-14 2022-04-21 (주)포인트엔지니어링 전기 전도성 접촉핀, 이의 제조방법, 검사장치 및 성형물의 제조방법 및 그 성형물
KR102469788B1 (ko) * 2021-02-22 2022-11-23 (주)포인트엔지니어링 복합 몰드, 금속 성형물 및 그 제조방법
WO2022235064A1 (ko) * 2021-05-07 2022-11-10 (주)포인트엔지니어링 금속 구조체 및 그 제조방법
CN114890379B (zh) * 2022-05-16 2025-08-01 苏州山河光电科技有限公司 一种基于高深宽比纳米柱的光学器件制作方法
CN116623133B (zh) * 2023-05-12 2023-11-24 中南大学 一种金属针尖阵列型等离子体光催化剂的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211029A (ja) * 1992-01-31 1993-08-20 Ricoh Co Ltd 電子放出素子及びその製造方法
JP3729449B2 (ja) * 2001-05-11 2005-12-21 キヤノン株式会社 細孔を有する構造体及びデバイス
JP4383796B2 (ja) * 2003-08-07 2009-12-16 キヤノン株式会社 ナノ構造体、及びその製造方法
JP4434658B2 (ja) * 2003-08-08 2010-03-17 キヤノン株式会社 構造体及びその製造方法

Also Published As

Publication number Publication date
JP2006326723A (ja) 2006-12-07

Similar Documents

Publication Publication Date Title
JP4681938B2 (ja) ナノ構造体の製造方法
JP3610293B2 (ja) 細孔を有する構造体及び前記細孔を有する構造体を用いたデバイス
US7214418B2 (en) Structure having holes and method for producing the same
JP4532634B2 (ja) 細孔の製造方法
Rabin et al. Formation of thick porous anodic alumina films and nanowire arrays on silicon wafers and glass
JP4146978B2 (ja) 細孔を有する構造体の製造方法、該製造方法により製造された構造体
JP3754876B2 (ja) 細孔を有する構造体の製造方法及び細孔を有する構造体
JP2005008909A (ja) 構造体の製造方法
JP3729449B2 (ja) 細孔を有する構造体及びデバイス
US6982217B2 (en) Nano-structure and method of manufacturing nano-structure
JP4681939B2 (ja) ナノ構造体の製造方法
JP4813925B2 (ja) 微細構造体の製造方法および微細構造体
JP4708596B2 (ja) ナノ構造体の製造方法
JP5365903B2 (ja) アルミニウム合金形成基板及びその製造方法
JP4136730B2 (ja) 細孔を有する構造体及びその製造方法
JP2002004087A (ja) ナノ構造体の製造方法及びナノ構造体
US20050279638A1 (en) Nanomachined and micromachined electrodes for electrochemical devices
JP4768478B2 (ja) 微細構造体の製造方法および微細構造体
JP4800799B2 (ja) 微細構造体の製造方法および微細構造体
KR100747074B1 (ko) 양극 산화 알루미늄 템플레이트(AAOTemplate)를 이용한 나노 로드의 제조 방법 및이를 이용하여 얻어진 나노 로드
JP4865240B2 (ja) 構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法
JP4603834B2 (ja) 構造体、その製造方法及び多孔質体
JP4136723B2 (ja) 構造体及び構造体の製造方法
JP2001213700A (ja) ナノ構造体及びその製造方法
JP4125151B2 (ja) 構造体の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071219

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20100621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101227

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110201

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110207

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140210

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees