JP4674282B2 - 線光源用ledモジュール - Google Patents
線光源用ledモジュール Download PDFInfo
- Publication number
- JP4674282B2 JP4674282B2 JP2007134276A JP2007134276A JP4674282B2 JP 4674282 B2 JP4674282 B2 JP 4674282B2 JP 2007134276 A JP2007134276 A JP 2007134276A JP 2007134276 A JP2007134276 A JP 2007134276A JP 4674282 B2 JP4674282 B2 JP 4674282B2
- Authority
- JP
- Japan
- Prior art keywords
- light source
- led module
- led
- source according
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011347 resin Substances 0.000 claims description 31
- 229920005989 resin Polymers 0.000 claims description 31
- 238000004806 packaging method and process Methods 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 4
- 230000017525 heat dissipation Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Description
本発明の他の目的は、LEDモジュールからの外側に外れる光の損失を効果的に防ぐことにより、輝度を極大化させる線光源用LEDモジュールを提供することである。
従って、従来のLEDパッケージを使用するときより、少数のLEDチップで十分の輝度を達成することができ、特にLEDチップから放出された熱が回路基板内に形成された熱放出ビアを通じて下端部の放熱板へ伝達されるため、高い信頼性が保障できる。
103 配線パターン
104 LEDチップ
105 熱放出ビア
106 反射壁
108 放熱板
107a、107b 樹脂包装部
Claims (19)
- 上部に配線パターンが形成された回路基板と、
前記配線パターンと電気的に連結されるよう前記回路基板上に直接装着され、前記回路基板の長さ方向に沿って一列に配列された複数のLEDチップと、
前記複数のLEDチップ全体を囲うよう前記回路基板上に設けられ前記複数のLEDチップから放出される光を反射させる反射壁と、
前記回路基板の下部に形成され前記LEDチップから発生する熱を放出させる放熱板とを含むことを特徴とする線光源用LEDモジュール。 - 前記回路基板は、セラミック回路基板であることを特徴とする請求項1に記載の線光源用LEDモジュール。
- 前記LEDチップは、GaN系、GaAs系、GaP系、InGaN系、InAlGaN系、InGaP系、又はInGaAsP系半導体から選択された材料で形成されることを特徴とする請求項1に記載の線光源用LEDモジュール。
- 前記回路基板内には、前記LEDチップから前記放熱板へ熱を放出させるための熱放出ビアが形成されることを特徴とする請求項1に記載の線光源用LEDモジュール。
- 前記反射壁は、高反射性金属層からなることを特徴とする請求項1に記載の線光源用LEDモジュール。
- 前記反射壁は、前記LEDチップと隣接する内側が前記高反射性金属層にコーティングされた非導電性壁構造物で形成されることを特徴とする請求項1に記載の線光源用LEDモジュール。
- 前記高反射性金属層は、銀(Ag)、アルミニウム(Al)、ロジウム(Rh)、ニッケル(Ni)、銅(Cu)、タングステン(W)、チタニウム(Ti)を含むグループから選択される少なくとも1種の金属又は金属の合金からなることを特徴とする請求項5または請求項6に記載の線光源用LEDモジュール。
- 前記非導電性壁構造物は、ポリマー及びセラミック材質のいずれか一つで形成されることを特徴とする請求項6に記載の線光源用LEDモジュール。
- 前記回路基板はセラミック回路基板で、前記非導電性壁構造物が前記セラミック材質で形成され前記回路基板と一体で形成されることを特徴とする請求項8に記載の線光源用LEDモジュール。
- 前記放熱板は、アルミニウム(Al)、ニッケル(Ni)、銅(Cu)、タングステン(W)、チタニウム(Ti)及びこれらのうち2以上の合金で構成されたグループから選択されたものを含むことを特徴とする請求項1に記載の線光源用LEDモジュール。
- 前記LEDチップ全体を密封する樹脂包装部をさらに含むことを特徴とする請求項1に記載の線光源用LEDモジュール。
- 各々の前記LEDチップを密封する半球のレンズ状の樹脂包装部をさらに含むことを特徴とする請求項1に記載の線光源用LEDモジュール。
- 2重層構造の樹脂包装部をさらに含み、前記2重層構造の樹脂包装部は、前記LEDチップを密封する半球のレンズ状の第1樹脂包装部、及び前記第1樹脂包装部を密封する第2樹脂包装部で構成されることを特徴とする請求項1に記載の線光源用LEDモジュール。
- 前記第1樹脂包装部の屈折率(n1)は、前記第2樹脂包装部の屈折率(n2)より大きいことを特徴とする請求項13に記載の線光源用LEDモジュール。
- 前記LEDチップは、青色LEDチップと、赤色LEDチップ、緑色LEDチップの組み合わせからなることを特徴とする請求項1に記載の線光源用LEDモジュール。
- 前記樹脂包装部には、蛍光体が混合されることを特徴とする請求項11に記載の線光源用LEDモジュール。
- 前記複数のLEDチップは青色LEDチップで、前記蛍光体は黄色蛍光体であることを特徴とする請求項16に記載の線光源用LEDモジュール。
- 前記LEDチップのピーク波長は370nm乃至470nmの範囲で、前記蛍光体は前記LEDチップにより励起され色座標系(0.556056,0.44084)、(0.625335,0.37419)、(0.734641,0.26536)からなる三角区域の中の光を発光することを特徴とする請求項16に記載の線光源用LEDモジュール。
- 前記線光源用LEDモジュールは、エッジ方式のバックライトユニット光源として使用されることを特徴とする請求項1に記載の線光源用LEDモジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060069262 | 2006-07-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008027898A JP2008027898A (ja) | 2008-02-07 |
JP4674282B2 true JP4674282B2 (ja) | 2011-04-20 |
Family
ID=38859549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007134276A Expired - Fee Related JP4674282B2 (ja) | 2006-07-24 | 2007-05-21 | 線光源用ledモジュール |
Country Status (4)
Country | Link |
---|---|
US (2) | US8039856B2 (ja) |
JP (1) | JP4674282B2 (ja) |
DE (1) | DE102007021042A1 (ja) |
TW (1) | TWI400819B (ja) |
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JP5614794B2 (ja) | 2008-02-14 | 2014-10-29 | 東芝ライテック株式会社 | 照明装置 |
JP5175121B2 (ja) * | 2008-02-29 | 2013-04-03 | 晶元光電股▲ふん▼有限公司 | 半導体素子 |
JP2010153761A (ja) * | 2008-11-19 | 2010-07-08 | Rohm Co Ltd | Led照明装置 |
TWI527260B (zh) * | 2008-11-19 | 2016-03-21 | 廣鎵光電股份有限公司 | 發光元件結構及其半導體晶圓結構 |
TWI421586B (zh) * | 2009-01-06 | 2014-01-01 | Au Optronics Corp | 背光模組與雙面液晶顯示裝置 |
US8922106B2 (en) * | 2009-06-02 | 2014-12-30 | Bridgelux, Inc. | Light source with optics to produce a spherical emission pattern |
JP5357671B2 (ja) * | 2009-09-03 | 2013-12-04 | シャープ株式会社 | 照明装置 |
KR101153818B1 (ko) * | 2009-09-25 | 2012-07-03 | 전자부품연구원 | 조명용 led모듈 및 제조방법 |
KR101279463B1 (ko) | 2009-10-30 | 2013-06-27 | 김정기 | 바이오 led 조명의 제조방법 |
KR100973330B1 (ko) * | 2010-01-22 | 2010-07-30 | 주식회사 비에스엘 | Led직관램프용 led패키지 모듈 및 그 제조방법 |
JP5757687B2 (ja) * | 2010-02-09 | 2015-07-29 | シャープ株式会社 | 発光装置、面光源装置、液晶表示装置、および発光装置の製造方法 |
DE102010008876B4 (de) * | 2010-02-22 | 2017-07-27 | Integrated Micro-Electronics Bulgaria | Lichtquelle mit Array-LEDs zum direkten Betrieb am Wechselspannungsnetz und Herstellungsverfahren hierfür |
JP6125233B2 (ja) * | 2010-03-03 | 2017-05-10 | フィリップス ライティング ホールディング ビー ヴィ | 光源からの熱を伝達するための反射体をもつ電球 |
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WO2014182104A1 (ko) | 2013-05-09 | 2014-11-13 | 서울반도체 주식회사 | 광원 모듈 및 이를 구비한 백라이트 유닛 |
CN103292221A (zh) * | 2013-06-07 | 2013-09-11 | 南通亚浦照明电器制造有限公司 | Led投光灯 |
ES2864634T3 (es) | 2013-10-18 | 2021-10-14 | L E S S Ltd | Aparato de iluminación basado en guía de ondas |
JP6583673B2 (ja) * | 2015-09-10 | 2019-10-02 | パナソニックIpマネジメント株式会社 | 発光装置、及び照明装置 |
KR102572819B1 (ko) | 2016-02-23 | 2023-08-30 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광모듈 제조방법 및 표시장치 |
KR20190041049A (ko) * | 2017-10-11 | 2019-04-22 | 삼성디스플레이 주식회사 | 백라이트 유닛 |
JP7089159B2 (ja) * | 2018-03-22 | 2022-06-22 | 日亜化学工業株式会社 | 発光装置 |
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-
2007
- 2007-05-04 DE DE102007021042A patent/DE102007021042A1/de not_active Withdrawn
- 2007-05-21 JP JP2007134276A patent/JP4674282B2/ja not_active Expired - Fee Related
- 2007-05-24 US US11/802,626 patent/US8039856B2/en not_active Expired - Fee Related
- 2007-06-20 TW TW096121993A patent/TWI400819B/zh not_active IP Right Cessation
-
2011
- 2011-09-16 US US13/235,038 patent/US8410509B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000173304A (ja) * | 1998-11-30 | 2000-06-23 | Toshiba Lighting & Technology Corp | 航空標識灯 |
JP2006190814A (ja) * | 2005-01-06 | 2006-07-20 | Hitachi Aic Inc | 発光素子用の配線基板 |
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US20080017872A1 (en) | 2008-01-24 |
US20120001209A1 (en) | 2012-01-05 |
JP2008027898A (ja) | 2008-02-07 |
US8039856B2 (en) | 2011-10-18 |
US8410509B2 (en) | 2013-04-02 |
DE102007021042A1 (de) | 2008-01-31 |
TW200807770A (en) | 2008-02-01 |
TWI400819B (zh) | 2013-07-01 |
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