JP4674177B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
JP4674177B2
JP4674177B2 JP2006071027A JP2006071027A JP4674177B2 JP 4674177 B2 JP4674177 B2 JP 4674177B2 JP 2006071027 A JP2006071027 A JP 2006071027A JP 2006071027 A JP2006071027 A JP 2006071027A JP 4674177 B2 JP4674177 B2 JP 4674177B2
Authority
JP
Japan
Prior art keywords
plasma
monitor
electrostatic adsorption
reaction chamber
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006071027A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007250755A (ja
JP2007250755A5 (enExample
Inventor
直志 板橋
勉 手束
誠一郎 菅野
元彦 吉開
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2006071027A priority Critical patent/JP4674177B2/ja
Priority to US11/512,339 priority patent/US7931776B2/en
Publication of JP2007250755A publication Critical patent/JP2007250755A/ja
Publication of JP2007250755A5 publication Critical patent/JP2007250755A5/ja
Priority to US12/842,368 priority patent/US20100282414A1/en
Priority to US13/031,839 priority patent/US8282767B2/en
Application granted granted Critical
Publication of JP4674177B2 publication Critical patent/JP4674177B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2006071027A 2006-03-15 2006-03-15 プラズマ処理装置 Expired - Fee Related JP4674177B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006071027A JP4674177B2 (ja) 2006-03-15 2006-03-15 プラズマ処理装置
US11/512,339 US7931776B2 (en) 2006-03-15 2006-08-30 Plasma processing apparatus
US12/842,368 US20100282414A1 (en) 2006-03-15 2010-07-23 Plasma processing apparatus
US13/031,839 US8282767B2 (en) 2006-03-15 2011-02-22 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006071027A JP4674177B2 (ja) 2006-03-15 2006-03-15 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2007250755A JP2007250755A (ja) 2007-09-27
JP2007250755A5 JP2007250755A5 (enExample) 2009-03-05
JP4674177B2 true JP4674177B2 (ja) 2011-04-20

Family

ID=38516548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006071027A Expired - Fee Related JP4674177B2 (ja) 2006-03-15 2006-03-15 プラズマ処理装置

Country Status (2)

Country Link
US (3) US7931776B2 (enExample)
JP (1) JP4674177B2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129283B2 (en) 2007-02-13 2012-03-06 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
KR20100043143A (ko) * 2007-08-21 2010-04-28 파나소닉 주식회사 플라즈마 처리 장치 및 플라즈마 방전 상태 감시 장치
JP5026916B2 (ja) * 2007-10-19 2012-09-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7910853B2 (en) * 2008-02-28 2011-03-22 Applied Materials, Inc Direct real-time monitoring and feedback control of RF plasma output for wafer processing
JP5397215B2 (ja) * 2009-12-25 2014-01-22 ソニー株式会社 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
JP2012175001A (ja) * 2011-02-23 2012-09-10 Toshiba Corp 制御装置、プラズマ処理装置、及び制御方法
KR101206744B1 (ko) 2011-02-28 2012-11-30 성균관대학교산학협력단 임피던스를 이용한 인시투 박막 두께 측정 장치, 박막 두께 측정 방법 및 그 기록 매체
DE102012205616B4 (de) * 2012-04-04 2016-07-14 Siltronic Ag Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung
JP6072462B2 (ja) 2012-08-07 2017-02-01 株式会社日立ハイテクノロジーズ プラズマ処理装置およびマイクロ波出力装置
CN104733364B (zh) * 2013-12-23 2017-11-03 中微半导体设备(上海)有限公司 一种静电夹盘
KR102021961B1 (ko) 2014-01-13 2019-11-04 삼성전자주식회사 반도체 제조설비의 관리방법
US9412606B2 (en) * 2014-02-14 2016-08-09 Taiwan Semiconductor Manufacturing Company Limited Target dimension uniformity for semiconductor wafers
JP6226777B2 (ja) * 2014-03-06 2017-11-08 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置の異常放電予知方法及び装置、並びに異常放電予知機能付きプラズマ処理装置
JP6321579B2 (ja) * 2015-06-01 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
US11417501B2 (en) * 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
GB201615114D0 (en) * 2016-09-06 2016-10-19 Spts Technologies Ltd A Method and system of monitoring and controlling deformation of a wafer substrate
WO2019156911A1 (en) * 2018-02-07 2019-08-15 The Government Of The United States Of America As Represented By The Secretary Of The Navy Non-invasive method for probing plasma impedance
KR20250022245A (ko) 2018-02-23 2025-02-14 램 리써치 코포레이션 고 전력 회로로부터 연결해제 없이 커패시턴스 측정
JP7247207B2 (ja) 2018-02-23 2023-03-28 ラム リサーチ コーポレーション 半導体処理ツールにおけるｒｆ電流測定
US20200048770A1 (en) * 2018-08-07 2020-02-13 Lam Research Corporation Chemical vapor deposition tool for preventing or suppressing arcing
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
US20200266037A1 (en) * 2019-02-14 2020-08-20 Advanced Energy Industries, Inc. Maintenance for remote plasma sources
JP7374023B2 (ja) * 2020-03-09 2023-11-06 東京エレクトロン株式会社 検査方法及びプラズマ処理装置
CN111413545B (zh) * 2020-04-20 2023-01-31 台达电子企业管理（上海）有限公司 车载充电机的绝缘阻抗检测电路和绝缘阻抗检测方法
JP7249315B2 (ja) * 2020-06-26 2023-03-30 株式会社日立ハイテク プラズマ処理装置
US12131886B2 (en) * 2020-07-08 2024-10-29 Lam Research Corporation Systems and methods for extracting process control information from radiofrequency supply system of plasma processing system
CN112530773B (zh) * 2020-11-27 2023-11-14 北京北方华创微电子装备有限公司 半导体工艺设备
JP7624305B2 (ja) * 2020-12-02 2025-01-30 東京エレクトロン株式会社 配線異常の検知方法及びプラズマ処理装置
CN114695044A (zh) * 2020-12-29 2022-07-01 中微半导体设备(上海)股份有限公司 一种基座组件以及等离子体处理设备
KR102797114B1 (ko) 2021-07-07 2025-04-18 삼성전자주식회사 기판 처리 장치용 임피던스 측정 지그 및 이를 이용한 기판 처리 장치의 제어 방법
US11669079B2 (en) * 2021-07-12 2023-06-06 Tokyo Electron Limited Tool health monitoring and classifications with virtual metrology and incoming wafer monitoring enhancements
CN113991629B (zh) * 2021-11-05 2022-07-12 汇网电气有限公司 一种消除小间隙放电的方法
US20240234078A1 (en) * 2023-01-11 2024-07-11 Applied Materials Israel Ltd. Discharging an electrostatic chuck located within a vacuum chamber
WO2024228931A1 (en) * 2023-05-03 2024-11-07 Lam Research Corporation Systems and methods for achieving uniformity with multiple coils

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3167820B2 (ja) * 1993-01-29 2001-05-21 東京エレクトロン株式会社 異常放電検出方法
KR100290748B1 (ko) * 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
JPH08330095A (ja) * 1995-06-02 1996-12-13 Hitachi Ltd プラズマ処理装置
JP3458548B2 (ja) * 1995-08-11 2003-10-20 日新電機株式会社 ワーク電位の測定方法
US5810963A (en) * 1995-09-28 1998-09-22 Kabushiki Kaisha Toshiba Plasma processing apparatus and method
JPH09106899A (ja) * 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US6184687B1 (en) * 1997-10-20 2001-02-06 Kabushiki Kaisha Toshiba Plasma process end point determination method and apparatus, and plasma evaluation method and apparatus
JP3812232B2 (ja) * 1998-10-23 2006-08-23 日新電機株式会社 多結晶シリコン薄膜形成方法及び薄膜形成装置
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
TW483037B (en) * 2000-03-24 2002-04-11 Hitachi Ltd Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
JP3689732B2 (ja) * 2001-12-05 2005-08-31 株式会社日立ハイテクノロジーズ プラズマ処理装置の監視装置
JP3977114B2 (ja) 2002-03-25 2007-09-19 株式会社ルネサステクノロジ プラズマ処理装置
JP2003282545A (ja) 2002-03-26 2003-10-03 Seiko Epson Corp 半導体装置の製造方法及びプラズマ処理装置
WO2003083911A1 (en) * 2002-03-28 2003-10-09 Tokyo Electron Limited A system and method for determining the state of a film in a plasma reactor using an electrical property
JP5404984B2 (ja) * 2003-04-24 2014-02-05 東京エレクトロン株式会社 プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置
JP2004355330A (ja) * 2003-05-29 2004-12-16 Fujitsu Ltd 診断装置及び診断方法
JP4695362B2 (ja) * 2004-08-16 2011-06-08 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
US7931776B2 (en) 2011-04-26
US20070215282A1 (en) 2007-09-20
US20110139370A1 (en) 2011-06-16
JP2007250755A (ja) 2007-09-27
US20100282414A1 (en) 2010-11-11
US8282767B2 (en) 2012-10-09

Similar Documents

Publication Publication Date Title
JP4674177B2 (ja) プラズマ処理装置
US7384876B2 (en) Method and apparatus for determining consumable lifetime
US9541514B2 (en) Method and apparatus for diagnosing status of parts in real time in plasma processing equipment
US7064812B2 (en) Method of using a sensor gas to determine erosion level of consumable system components
CN102612738B (zh) 用于检测等离子体处理系统中等离子体约束状态的方法及装置
KR20160140420A (ko) 플라즈마 처리 장치 및 기판 박리 검지 방법
JP3689732B2 (ja) プラズマ処理装置の監視装置
US20140346952A1 (en) Remote plasma system having self-management function and self management method of the same
JP2005268214A (ja) Ａｃ電源によって電源供給されるプラズマ処理における電気アークを検出するための方法及びシステム
JP2009245988A (ja) プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法
KR101089951B1 (ko) 플라즈마 처리 장치
JP2021509770A (ja) プラズマ処理副生成物を管理するための構成要素および処理
WO2008034092A2 (en) System and method for detecting non-cathode arcing in a plasma generation apparatus
US20070035908A1 (en) Plasma processing apparatus and plasma processing method
JP2004235545A (ja) プラズマ処理装置及び処理方法
JP2003045846A (ja) 半導体製造装置の監視方法及びその制御方法
KR101124795B1 (ko) 플라즈마 처리장치, 챔버내 부품 및 챔버내 부품의 수명 검출 방법
JP2006328510A (ja) プラズマ処理方法及び装置
TWI416998B (zh) Plasma processing device
CN114582696A (zh) 配线异常的检测方法和等离子体处理装置
JP4294516B2 (ja) プラズマ処理方法
JP4873025B2 (ja) プラズマ処理方法
WO2006071341A2 (en) Method and apparatus to determine consumable part condition
KR20230094932A (ko) 임피던스 제어 장치를 포함하는 기판 처리 시스템
JP2002121687A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090120

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090120

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101019

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110111

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110124

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140128

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees