JP4663857B2 - レイアウトパターンデータ補正方法及び半導体デバイスの製造方法 - Google Patents

レイアウトパターンデータ補正方法及び半導体デバイスの製造方法 Download PDF

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Publication number
JP4663857B2
JP4663857B2 JP2000259008A JP2000259008A JP4663857B2 JP 4663857 B2 JP4663857 B2 JP 4663857B2 JP 2000259008 A JP2000259008 A JP 2000259008A JP 2000259008 A JP2000259008 A JP 2000259008A JP 4663857 B2 JP4663857 B2 JP 4663857B2
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pattern
patterns
layout pattern
rule
area
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Japanese (ja)
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JP2002107902A (ja
JP2002107902A5 (enrdf_load_stackoverflow
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祐作 小野
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Renesas Electronics Corp
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Renesas Electronics Corp
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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2000259008A 2000-07-25 2000-08-29 レイアウトパターンデータ補正方法及び半導体デバイスの製造方法 Expired - Fee Related JP4663857B2 (ja)

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JP2000259008A JP4663857B2 (ja) 2000-07-25 2000-08-29 レイアウトパターンデータ補正方法及び半導体デバイスの製造方法

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JP2000223731 2000-07-25
JP2000-223731 2000-07-25
JP2000259008A JP4663857B2 (ja) 2000-07-25 2000-08-29 レイアウトパターンデータ補正方法及び半導体デバイスの製造方法

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JP2002107902A JP2002107902A (ja) 2002-04-10
JP2002107902A5 JP2002107902A5 (enrdf_load_stackoverflow) 2007-10-11
JP4663857B2 true JP4663857B2 (ja) 2011-04-06

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7249342B2 (en) * 2002-07-12 2007-07-24 Cadence Design Systems, Inc. Method and system for context-specific mask writing
JP2006189724A (ja) * 2005-01-07 2006-07-20 Toshiba Corp パターン抽出システム、測定ポイント抽出方法、パターン抽出方法及びパターン抽出プログラム
KR100655428B1 (ko) * 2005-10-24 2006-12-08 삼성전자주식회사 광근접효과보정 시스템 및 방법
CN115480442A (zh) * 2021-05-31 2022-12-16 联华电子股份有限公司 图案拆解方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212957A (ja) * 1990-10-19 1992-08-04 Fujitsu Ltd レチクル及び露光方法
JP3268692B2 (ja) * 1993-08-05 2002-03-25 株式会社日立製作所 半導体集積回路パターンの形成方法およびそれに用いるマスクの製造方法
US5472814A (en) * 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
JP3512954B2 (ja) * 1996-03-06 2004-03-31 富士通株式会社 パターン近接効果補正方法、プログラム、及び装置
JP3583559B2 (ja) * 1996-09-30 2004-11-04 株式会社ルネサステクノロジ 光近接効果補正方法
JP3954216B2 (ja) * 1997-09-30 2007-08-08 株式会社東芝 マスクデータ設計方法
JP2001174974A (ja) * 1999-12-20 2001-06-29 Matsushita Electric Ind Co Ltd 光学的近接効果補正方法及び光強度シミュレーション方法

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