JP4662350B2 - 液晶表示装置及びその製造方法 - Google Patents
液晶表示装置及びその製造方法 Download PDFInfo
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- JP4662350B2 JP4662350B2 JP2005211407A JP2005211407A JP4662350B2 JP 4662350 B2 JP4662350 B2 JP 4662350B2 JP 2005211407 A JP2005211407 A JP 2005211407A JP 2005211407 A JP2005211407 A JP 2005211407A JP 4662350 B2 JP4662350 B2 JP 4662350B2
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 37
- 238000002161 passivation Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 109
- 239000010408 film Substances 0.000 description 68
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Description
Claims (8)
- 液晶層を介して貼り合わされた第1及び第2の基板からなり、画素選択用トランジスタを備えた複数の表示画素を含む画素領域と、その領域の外側で異方性導電フィルムを介して外部回路の端子が接続される外部接続領域とを備えた液晶表示装置であって、
前記画素領域では、前記第1の基板に配置された能動層と、前記能動層を含む前記第1の基板を覆う第1の絶縁膜と、前記第1の絶縁膜上のうち前記能動層上に配置されたゲート電極と、前記ゲート電極を覆う第2の絶縁膜と、を備えると共に、
前記外部接続領域では、前記第1の絶縁膜上であって前記外部接続領域の一部に配置された金属層と、前記金属層を覆う前記第2の絶縁膜と、前記金属層を覆って前記第2の絶縁膜上に配置された第1の導電層と、前記第1の導電層上のうち前記金属層を覆う領域を露出する開口部を有するようにして前記第1の導電層上に配置されたパッシベーション膜と、を備え、前記第1の導電層上に、前記異方性導電フィルムを介して前記外部回路の端子が接続されており、前記金属層上の前記第1の導電層の表面は、前記パッシベーション膜の表面より高いか、もしくは同じ高さになっていることを特徴とする液晶表示装置。 - 液晶層を介して貼り合わされた第1及び第2の基板からなり、画素選択用トランジスタを備えた複数の表示画素を含む画素領域と、その領域の外側で異方性導電フィルムを介して外部回路の端子が接続される外部接続領域とを備えた液晶表示装置であって、
前記画素領域では、前記第1の基板に配置された能動層と、前記能動層を含む前記第1の基板を覆う第1の絶縁膜と、前記第1の絶縁膜上のうち前記能動層上に配置されたゲート電極と、前記ゲート電極を覆う第2の絶縁膜と、を備えると共に、
前記外部接続領域では、前記第1の絶縁膜上であって前記外部接続領域の一部に配置された金属層と、前記金属層を覆う前記第2の絶縁膜と、前記金属層を覆って前記第2の絶縁膜上に配置された第1の導電層と、前記第1の導電層上のうち前記金属層を覆う領域を露出する開口部を有するようにして前記第1の導電層上に配置されたパッシベーション膜と、前記開口部で露出する前記第1の導電層上を覆うようにして配置された第2の導電層とを備え、前記第2の導電層上に、前記異方性導電フィルムを介して前記外部回路の端子が接続されており、前記金属層上の前記第2の導電層の表面は、前記パッシベーション膜の表面より高いか、もしくは同じ程度の高さになっていることを特徴とする液晶表示装置。 - 前記ゲート電極及び前記金属層は、同一の材料からなることを特徴とする請求項1又は2に記載の液晶表示装置。
- 前記能動層に接続されたソース電極及びドレイン電極を備え、前記ソース電極、前記ドレイン電極、及び前記第1の導電層は、同一の材料からなることを特徴とする請求項1、2、3のいずれかに記載の液晶表示装置。
- 前記画素領域では、前記第1の基板と前記第2の基板との間に、平坦化膜と、反射金属層と、画素電極と、第1及び第2の配向膜と、共通電極とが配置されており、前記第2の基板の外側の主面に、位相差板及び偏光板が積層されていることを特徴とする請求項1、2、3、4のいずれかに記載の液晶表示装置。
- 前記第2の導電層と前記画素電極は、同一の材料からなることを特徴とする請求項5に記載の液晶表示装置。
- 前記パッシベーション膜は、シリコン酸化膜またはシリコン窒化膜からなることを特徴とする請求項1乃至6のいずれかに記載の液晶表示装置。
- 画素選択用トランジスタを備えた複数の表示画素を含む画素領域と、その領域の外側で異方性導電フィルムを介して外部回路の端子が接続される外部接続領域と、を備えた液晶表示装置の製造方法であって、
前記画素領域及び前記外部接続領域が画定された第1の基板を準備し、
前記画素領域の前記第1の基板上に能動層を形成する工程と、
前記能動層を含む前記第1の基板上に第1の絶縁膜を形成する工程と、
前記画素領域の前記第1の絶縁膜上にゲート電極を形成すると共に、前記第1の絶縁膜上であって前記外部接続領域の一部に金属層を形成する工程と、
前記ゲート電極及び前記金属層を覆う第2の絶縁膜を形成する工程と、
前記外部接続領域の前記第2の絶縁膜上に前記金属層を覆う導電層を形成する工程と、
前記導電層上のうち前記金属層を覆う領域を露出する開口部を設けるようにして、前記導電層上にパッシベーション膜を形成する工程と、
前記第1の基板に第2の基板を貼り合わせ、前記第1の基板と前記第2の基板の間に液晶を封入する工程と、
前記導電層上に前記異方性導電フィルムを介して前記外部回路の端子を接続する工程と、を含み、前記金属層上の前記導電層の表面を前記パッシベーション膜の表面より高いか、もしくは同じ高さにすることを特徴とする液晶表示装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005211407A JP4662350B2 (ja) | 2005-07-21 | 2005-07-21 | 液晶表示装置及びその製造方法 |
TW095123508A TWI303488B (en) | 2005-07-21 | 2006-06-29 | Liquid crystal display device and its manufacturing method |
US11/488,144 US7446845B2 (en) | 2005-07-21 | 2006-07-18 | Liquid crystal display device and its manufacturing method |
KR1020060067826A KR100829276B1 (ko) | 2005-07-21 | 2006-07-20 | 액정 표시 장치 및 그 제조 방법 |
CNB200610101589XA CN100520507C (zh) | 2005-07-21 | 2006-07-20 | 液晶显示装置及其制造方法 |
CNA2008101495307A CN101373778A (zh) | 2005-07-21 | 2006-07-20 | 显示装置 |
US12/238,051 US8363197B2 (en) | 2005-07-21 | 2008-09-25 | Liquid crystal display device and its manufacturing method |
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JP2005211407A JP4662350B2 (ja) | 2005-07-21 | 2005-07-21 | 液晶表示装置及びその製造方法 |
Publications (2)
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JP2007025562A JP2007025562A (ja) | 2007-02-01 |
JP4662350B2 true JP4662350B2 (ja) | 2011-03-30 |
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JP2005211407A Active JP4662350B2 (ja) | 2005-07-21 | 2005-07-21 | 液晶表示装置及びその製造方法 |
Country Status (5)
Country | Link |
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US (2) | US7446845B2 (ja) |
JP (1) | JP4662350B2 (ja) |
KR (1) | KR100829276B1 (ja) |
CN (2) | CN101373778A (ja) |
TW (1) | TWI303488B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4662350B2 (ja) * | 2005-07-21 | 2011-03-30 | エプソンイメージングデバイス株式会社 | 液晶表示装置及びその製造方法 |
JP4622917B2 (ja) * | 2006-03-30 | 2011-02-02 | エプソンイメージングデバイス株式会社 | 液晶パネル用アレイ基板および液晶パネル |
KR20110067970A (ko) * | 2009-12-15 | 2011-06-22 | 삼성전자주식회사 | 표시 기판 및 이의 제조 방법 |
CA2818413C (en) * | 2010-11-16 | 2020-06-02 | Rhodia Operations | Sulfur tolerant alumina catalyst support |
US8704232B2 (en) | 2012-06-12 | 2014-04-22 | Apple Inc. | Thin film transistor with increased doping regions |
US9065077B2 (en) | 2012-06-15 | 2015-06-23 | Apple, Inc. | Back channel etch metal-oxide thin film transistor and process |
US9685557B2 (en) | 2012-08-31 | 2017-06-20 | Apple Inc. | Different lightly doped drain length control for self-align light drain doping process |
US8987027B2 (en) | 2012-08-31 | 2015-03-24 | Apple Inc. | Two doping regions in lightly doped drain for thin film transistors and associated doping processes |
US8748320B2 (en) | 2012-09-27 | 2014-06-10 | Apple Inc. | Connection to first metal layer in thin film transistor process |
US8999771B2 (en) | 2012-09-28 | 2015-04-07 | Apple Inc. | Protection layer for halftone process of third metal |
US9201276B2 (en) | 2012-10-17 | 2015-12-01 | Apple Inc. | Process architecture for color filter array in active matrix liquid crystal display |
US9001297B2 (en) | 2013-01-29 | 2015-04-07 | Apple Inc. | Third metal layer for thin film transistor with reduced defects in liquid crystal display |
US9088003B2 (en) | 2013-03-06 | 2015-07-21 | Apple Inc. | Reducing sheet resistance for common electrode in top emission organic light emitting diode display |
TWI518917B (zh) | 2013-04-12 | 2016-01-21 | 元太科技工業股份有限公司 | 畫素結構 |
CN107706136A (zh) * | 2017-10-16 | 2018-02-16 | 上海御渡半导体科技有限公司 | 一种半导体芯片的封装方法 |
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JP2000206568A (ja) * | 1999-01-11 | 2000-07-28 | Seiko Epson Corp | 電気光学装置及びその製造方法 |
JP2004158826A (ja) * | 2002-09-12 | 2004-06-03 | Seiko Epson Corp | 配線構造の製造方法、電気光学装置の製造方法、電気光学装置および電子機器 |
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2005
- 2005-07-21 JP JP2005211407A patent/JP4662350B2/ja active Active
-
2006
- 2006-06-29 TW TW095123508A patent/TWI303488B/zh not_active IP Right Cessation
- 2006-07-18 US US11/488,144 patent/US7446845B2/en active Active
- 2006-07-20 CN CNA2008101495307A patent/CN101373778A/zh active Pending
- 2006-07-20 KR KR1020060067826A patent/KR100829276B1/ko not_active IP Right Cessation
- 2006-07-20 CN CNB200610101589XA patent/CN100520507C/zh active Active
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2008
- 2008-09-25 US US12/238,051 patent/US8363197B2/en active Active
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JP2000206568A (ja) * | 1999-01-11 | 2000-07-28 | Seiko Epson Corp | 電気光学装置及びその製造方法 |
JP2004158826A (ja) * | 2002-09-12 | 2004-06-03 | Seiko Epson Corp | 配線構造の製造方法、電気光学装置の製造方法、電気光学装置および電子機器 |
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Also Published As
Publication number | Publication date |
---|---|
TWI303488B (en) | 2008-11-21 |
US20070019121A1 (en) | 2007-01-25 |
US7446845B2 (en) | 2008-11-04 |
TW200705678A (en) | 2007-02-01 |
CN101373778A (zh) | 2009-02-25 |
KR20070012225A (ko) | 2007-01-25 |
US8363197B2 (en) | 2013-01-29 |
KR100829276B1 (ko) | 2008-05-13 |
JP2007025562A (ja) | 2007-02-01 |
CN100520507C (zh) | 2009-07-29 |
US20090026455A1 (en) | 2009-01-29 |
CN1900776A (zh) | 2007-01-24 |
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