JP4661990B2 - 成膜装置、成膜方法、基板処理装置及び記憶媒体 - Google Patents

成膜装置、成膜方法、基板処理装置及び記憶媒体 Download PDF

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JP4661990B2
JP4661990B2 JP2010180537A JP2010180537A JP4661990B2 JP 4661990 B2 JP4661990 B2 JP 4661990B2 JP 2010180537 A JP2010180537 A JP 2010180537A JP 2010180537 A JP2010180537 A JP 2010180537A JP 4661990 B2 JP4661990 B2 JP 4661990B2
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gas supply
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JP2010263245A (ja
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寿 加藤
学 本間
アントニー ディップ
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Tokyo Electron Ltd
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JP2010180537A 2008-06-27 2010-08-11 成膜装置、成膜方法、基板処理装置及び記憶媒体 Active JP4661990B2 (ja)

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JP2010180537A JP4661990B2 (ja) 2008-06-27 2010-08-11 成膜装置、成膜方法、基板処理装置及び記憶媒体

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US12/147,707 US20090324826A1 (en) 2008-06-27 2008-06-27 Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium
JP2008215984 2008-08-25
JP2009056685 2009-03-10
JP2010180537A JP4661990B2 (ja) 2008-06-27 2010-08-11 成膜装置、成膜方法、基板処理装置及び記憶媒体

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JP2009139575A Division JP5310283B2 (ja) 2008-06-27 2009-06-10 成膜方法、成膜装置、基板処理装置及び記憶媒体

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130140576A (ko) 2012-06-14 2013-12-24 도쿄엘렉트론가부시키가이샤 성막 방법
US8642487B2 (en) 2011-05-18 2014-02-04 Tokyo Electron Limited Film deposition method and film deposition apparatus
US8853097B2 (en) 2012-01-20 2014-10-07 Tokyo Electron Limited Particle reducing method
US8895456B2 (en) 2012-12-21 2014-11-25 Tokyo Electron Limited Method of depositing a film
US8921237B2 (en) 2012-12-26 2014-12-30 Tokyo Electron Limited Method of depositing a film
JP2015010271A (ja) * 2013-07-02 2015-01-19 東京エレクトロン株式会社 成膜方法
US8987147B2 (en) 2012-12-21 2015-03-24 Tokyo Electron Limited Method of depositing a film using a turntable apparatus
US9040434B2 (en) 2012-07-13 2015-05-26 Tokyo Electron Limited Film deposition method and film deposition apparatus
US9153429B2 (en) 2012-12-21 2015-10-06 Tokyo Electron Limited Film deposition apparatus having a turntable and film deposition method
KR101786167B1 (ko) 2013-09-18 2017-10-17 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

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JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5553588B2 (ja) * 2009-12-10 2014-07-16 東京エレクトロン株式会社 成膜装置
WO2011125395A1 (ja) * 2010-04-09 2011-10-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP2013077805A (ja) * 2011-09-16 2013-04-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6042656B2 (ja) * 2011-09-30 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP5886730B2 (ja) * 2012-11-26 2016-03-16 東京エレクトロン株式会社 成膜方法、その成膜方法のプログラム、そのプログラムを記録した記録媒体、及び、成膜装置
JP6294151B2 (ja) * 2014-05-12 2018-03-14 東京エレクトロン株式会社 成膜方法
JP6294194B2 (ja) * 2014-09-02 2018-03-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102264257B1 (ko) * 2014-12-30 2021-06-14 삼성전자주식회사 막 형성 방법 및 이를 이용한 반도체 장치 제조 방법
JP6456185B2 (ja) 2015-02-26 2019-01-23 東京エレクトロン株式会社 シリコン含有膜の成膜方法
JP6494495B2 (ja) * 2015-06-30 2019-04-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102010633B1 (ko) 2015-06-30 2019-08-13 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
JP6569406B2 (ja) * 2015-09-09 2019-09-04 セイコーエプソン株式会社 原子層堆積装置および原子層堆積の成膜方法
JP6685216B2 (ja) * 2016-01-26 2020-04-22 東京エレクトロン株式会社 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
JP6608332B2 (ja) * 2016-05-23 2019-11-20 東京エレクトロン株式会社 成膜装置

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JPS63112A (ja) * 1986-06-19 1988-01-05 Rohm Co Ltd 半導体製造装置
JPS63140619U (enExample) * 1987-03-06 1988-09-16
JPH08181076A (ja) * 1994-10-26 1996-07-12 Fuji Xerox Co Ltd 薄膜形成方法および薄膜形成装置
JPH08264618A (ja) * 1995-03-27 1996-10-11 Toshiba Corp 半導体製造装置及び半導体装置の製造方法
JPH08340036A (ja) * 1995-06-09 1996-12-24 Tokyo Electron Ltd 処理装置
JP2978974B2 (ja) * 1996-02-01 1999-11-15 キヤノン販売株式会社 プラズマ処理装置
AU6336700A (en) * 1999-06-24 2001-01-09 Gadgil, Prasad Narhar Apparatus for atomic layer chemical vapor deposition
KR100319494B1 (ko) * 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
DE102004056170A1 (de) * 2004-08-06 2006-03-16 Aixtron Ag Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
KR100558922B1 (ko) * 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법
DE102005055468A1 (de) * 2005-11-22 2007-05-24 Aixtron Ag Verfahren zum Abscheiden von Schichten in einem CVD-Reaktor sowie Gaseinlassorgan für einen CVD-Reaktor
US20070218702A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
JP2008172083A (ja) * 2007-01-12 2008-07-24 Sharp Corp 気相成長装置および気相成長方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8642487B2 (en) 2011-05-18 2014-02-04 Tokyo Electron Limited Film deposition method and film deposition apparatus
US8853097B2 (en) 2012-01-20 2014-10-07 Tokyo Electron Limited Particle reducing method
US8932963B2 (en) 2012-01-20 2015-01-13 Tokyo Electron Limited Film deposition method
US8962495B2 (en) 2012-06-14 2015-02-24 Tokyo Electron Limited Film deposition method
JP2013258383A (ja) * 2012-06-14 2013-12-26 Tokyo Electron Ltd 成膜方法
KR20130140576A (ko) 2012-06-14 2013-12-24 도쿄엘렉트론가부시키가이샤 성막 방법
KR101588083B1 (ko) * 2012-06-14 2016-01-25 도쿄엘렉트론가부시키가이샤 성막 방법
US9040434B2 (en) 2012-07-13 2015-05-26 Tokyo Electron Limited Film deposition method and film deposition apparatus
US8895456B2 (en) 2012-12-21 2014-11-25 Tokyo Electron Limited Method of depositing a film
US8987147B2 (en) 2012-12-21 2015-03-24 Tokyo Electron Limited Method of depositing a film using a turntable apparatus
US9153429B2 (en) 2012-12-21 2015-10-06 Tokyo Electron Limited Film deposition apparatus having a turntable and film deposition method
US8921237B2 (en) 2012-12-26 2014-12-30 Tokyo Electron Limited Method of depositing a film
JP2015010271A (ja) * 2013-07-02 2015-01-19 東京エレクトロン株式会社 成膜方法
US9136133B2 (en) 2013-07-02 2015-09-15 Tokyo Electron Limited Method of depositing film
KR101786167B1 (ko) 2013-09-18 2017-10-17 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
US10837110B2 (en) 2013-09-18 2020-11-17 Tokyo Electron Limited Substrate processing apparatus and method for processing a substrate

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JP2011103496A (ja) 2011-05-26
JP5375852B2 (ja) 2013-12-25
JP5375853B2 (ja) 2013-12-25
JP2011103495A (ja) 2011-05-26

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