JP4647732B2 - Ｐ／ｐ−エピタキシャルウェーハの製造方法 - Google Patents

Ｐ／ｐ−エピタキシャルウェーハの製造方法 Download PDF

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Publication number
JP4647732B2
JP4647732B2 JP29907998A JP29907998A JP4647732B2 JP 4647732 B2 JP4647732 B2 JP 4647732B2 JP 29907998 A JP29907998 A JP 29907998A JP 29907998 A JP29907998 A JP 29907998A JP 4647732 B2 JP4647732 B2 JP 4647732B2
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temperature
oxygen
wafer
epitaxial
epitaxial growth
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JP2000114176A (ja
JP2000114176A5 (https=
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誠一 志村
永 大澤
広一郎 林田
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Sumco Techxiv Corp
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Sumco Techxiv Corp
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JP29907998A 1998-10-06 1998-10-06 Ｐ／ｐ−エピタキシャルウェーハの製造方法 Expired - Lifetime JP4647732B2 (ja)

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JP29907998A JP4647732B2 (ja) 1998-10-06 1998-10-06 Ｐ／ｐ−エピタキシャルウェーハの製造方法

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JP29907998A JP4647732B2 (ja) 1998-10-06 1998-10-06 Ｐ／ｐ−エピタキシャルウェーハの製造方法

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JP2000114176A JP2000114176A (ja) 2000-04-21
JP2000114176A5 JP2000114176A5 (https=) 2005-11-17
JP4647732B2 true JP4647732B2 (ja) 2011-03-09

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JP29907998A Expired - Lifetime JP4647732B2 (ja) 1998-10-06 1998-10-06 Ｐ／ｐ−エピタキシャルウェーハの製造方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4465141B2 (ja) * 2002-01-25 2010-05-19 信越半導体株式会社 シリコンエピタキシャルウェーハ及びその製造方法
KR101184380B1 (ko) * 2008-08-28 2012-09-20 매그나칩 반도체 유한회사 에피택셜 웨이퍼 제조 방법, 이를 적용한 에피택셜 웨이퍼,및 반도체 소자
US7977216B2 (en) * 2008-09-29 2011-07-12 Magnachip Semiconductor, Ltd. Silicon wafer and fabrication method thereof
CN116759325B (zh) * 2023-08-23 2023-11-03 江苏卓胜微电子股份有限公司 用于监控离子注入剂量的阻值监控方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03166733A (ja) * 1989-11-27 1991-07-18 Olympus Optical Co Ltd 半導体装置の製造方法
JPH0897220A (ja) * 1994-09-26 1996-04-12 Toshiba Ceramics Co Ltd シリコンエピタキシャルウェーハの製造方法及びシリコンエピタキシャルウェーハ
JPH10223641A (ja) * 1996-12-03 1998-08-21 Sumitomo Sitix Corp 半導体シリコンエピタキシャルウェーハ及び半導体デバイスの製造方法

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