JP4641598B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4641598B2
JP4641598B2 JP2000235482A JP2000235482A JP4641598B2 JP 4641598 B2 JP4641598 B2 JP 4641598B2 JP 2000235482 A JP2000235482 A JP 2000235482A JP 2000235482 A JP2000235482 A JP 2000235482A JP 4641598 B2 JP4641598 B2 JP 4641598B2
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film
region
impurity element
semiconductor
layer
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Japanese (ja)
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JP2002050765A (ja
JP2002050765A5 (enExample
Inventor
英人 大沼
昌彦 早川
理 中村
誠 遠藤
茂則 早川
誠之 梶原
慶一 関口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000235482A priority Critical patent/JP4641598B2/ja
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Publication of JP2002050765A5 publication Critical patent/JP2002050765A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000235482A 2000-08-03 2000-08-03 半導体装置の作製方法 Expired - Fee Related JP4641598B2 (ja)

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JP2000235482A JP4641598B2 (ja) 2000-08-03 2000-08-03 半導体装置の作製方法

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JP2000235482A JP4641598B2 (ja) 2000-08-03 2000-08-03 半導体装置の作製方法

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JP2002050765A JP2002050765A (ja) 2002-02-15
JP2002050765A5 JP2002050765A5 (enExample) 2007-09-13
JP4641598B2 true JP4641598B2 (ja) 2011-03-02

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JP2000235482A Expired - Fee Related JP4641598B2 (ja) 2000-08-03 2000-08-03 半導体装置の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525165B2 (en) 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6706544B2 (en) 2000-04-19 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and fabricating method thereof
KR102835255B1 (ko) * 2020-10-12 2025-07-16 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 포함하는 표시장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274336A (ja) * 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JP3844566B2 (ja) * 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法

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