JP4640460B2 - 感光性ペースト組成物およびパターン形成方法 - Google Patents

感光性ペースト組成物およびパターン形成方法 Download PDF

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Publication number
JP4640460B2
JP4640460B2 JP2008177748A JP2008177748A JP4640460B2 JP 4640460 B2 JP4640460 B2 JP 4640460B2 JP 2008177748 A JP2008177748 A JP 2008177748A JP 2008177748 A JP2008177748 A JP 2008177748A JP 4640460 B2 JP4640460 B2 JP 4640460B2
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Japan
Prior art keywords
photosensitive paste
pattern
paste composition
acid
meth
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Expired - Fee Related
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JP2008177748A
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English (en)
Japanese (ja)
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JP2009037232A5 (enExample
JP2009037232A (ja
Inventor
和生 工藤
考史 板野
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JSR Corp
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JSR Corp
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Publication of JP2009037232A5 publication Critical patent/JP2009037232A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)
JP2008177748A 2007-07-09 2008-07-08 感光性ペースト組成物およびパターン形成方法 Expired - Fee Related JP4640460B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008177748A JP4640460B2 (ja) 2007-07-09 2008-07-08 感光性ペースト組成物およびパターン形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007179179 2007-07-09
JP2008177748A JP4640460B2 (ja) 2007-07-09 2008-07-08 感光性ペースト組成物およびパターン形成方法

Related Child Applications (1)

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JP2010228531A Division JP4645774B1 (ja) 2007-07-09 2010-10-08 感光性ペースト組成物およびパターン形成方法

Publications (3)

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JP2009037232A JP2009037232A (ja) 2009-02-19
JP2009037232A5 JP2009037232A5 (enExample) 2010-08-26
JP4640460B2 true JP4640460B2 (ja) 2011-03-02

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JP2008177748A Expired - Fee Related JP4640460B2 (ja) 2007-07-09 2008-07-08 感光性ペースト組成物およびパターン形成方法
JP2010228531A Expired - Fee Related JP4645774B1 (ja) 2007-07-09 2010-10-08 感光性ペースト組成物およびパターン形成方法

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JP (2) JP4640460B2 (enExample)
KR (1) KR101106921B1 (enExample)
CN (1) CN101354533B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5120119B2 (ja) * 2008-07-10 2013-01-16 Ｊｓｒ株式会社 感光性ペースト組成物およびパターン形成方法
JP5120120B2 (ja) * 2008-07-15 2013-01-16 Ｊｓｒ株式会社 感光性ペースト組成物およびパターン形成方法
JP2010102200A (ja) * 2008-10-24 2010-05-06 Jsr Corp 感光性ペースト組成物およびパターン形成方法
KR101138795B1 (ko) * 2008-12-23 2012-04-24 제일모직주식회사 감광성 페이스트 조성물 이를 이용하여 제조한 플라즈마 디스플레이 전극
JP5287397B2 (ja) * 2009-03-18 2013-09-11 Ｊｓｒ株式会社 アルミニウム含有感光性樹脂組成物およびパターン形成方法
JP5347665B2 (ja) * 2009-04-07 2013-11-20 Ｊｓｒ株式会社 アルミニウム含有感光性組成物および電極の製造方法
JP2011007864A (ja) * 2009-06-23 2011-01-13 Jsr Corp 感光性ペースト組成物およびパターン形成方法
CN103295659B (zh) * 2012-02-24 2016-03-30 比亚迪股份有限公司 太阳能电池用导电浆料及其制备方法
JP5884556B2 (ja) * 2012-03-02 2016-03-15 東レ株式会社 感光性導電ペースト
KR101431485B1 (ko) * 2012-05-03 2014-08-26 주식회사 엘지화학 태양전지 제조에서 이용 가능한 잉크 조성물 및 이를 이용한 패턴형성방법
WO2013165223A1 (ko) * 2012-05-03 2013-11-07 주식회사 엘지화학 태양전지 제조에서 이용 가능한 잉크 조성물 및 이를 이용한 패턴형성방법
KR101765707B1 (ko) 2012-06-15 2017-08-07 가부시키가이샤 무라타 세이사쿠쇼 도전성 페이스트, 그리고 적층 세라믹 전자부품 및 그 제조방법
JPWO2020070924A1 (ja) * 2018-10-03 2021-09-24 Ｈｄマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品
JP7238316B2 (ja) * 2018-10-03 2023-03-14 Ｈｄマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3510761B2 (ja) * 1997-03-26 2004-03-29 太陽インキ製造株式会社 アルカリ現像型光硬化性導電性ペースト組成物及びそれを用いて電極形成したプラズマディスプレイパネル
KR100669725B1 (ko) * 2004-09-09 2007-01-16 삼성에스디아이 주식회사 감광성 페이스트 조성물
JP2006126354A (ja) * 2004-10-27 2006-05-18 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びパターン形成樹脂層の製造方法、並びに該感光性樹脂組成物を含む半導体装置及び表示素子
JP2006219660A (ja) * 2005-01-11 2006-08-24 Jsr Corp 無機粉体含有樹脂組成物、転写フィルムおよびプラズマディスプレイパネルの製造方法
JP4253306B2 (ja) * 2005-03-01 2009-04-08 太陽インキ製造株式会社 感光性ペースト及びそれを用いて形成した焼成物パターン

Also Published As

Publication number Publication date
JP2011065166A (ja) 2011-03-31
JP4645774B1 (ja) 2011-03-09
CN101354533B (zh) 2012-10-10
KR101106921B1 (ko) 2012-01-25
KR20090005990A (ko) 2009-01-14
CN101354533A (zh) 2009-01-28
JP2009037232A (ja) 2009-02-19

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