JP4639618B2 - ガスセンサ - Google Patents
ガスセンサ Download PDFInfo
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- JP4639618B2 JP4639618B2 JP2004076859A JP2004076859A JP4639618B2 JP 4639618 B2 JP4639618 B2 JP 4639618B2 JP 2004076859 A JP2004076859 A JP 2004076859A JP 2004076859 A JP2004076859 A JP 2004076859A JP 4639618 B2 JP4639618 B2 JP 4639618B2
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- JP
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- Prior art keywords
- thin film
- gas sensor
- gas detection
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000007789 gas Substances 0.000 claims description 184
- 239000000463 material Substances 0.000 claims description 149
- 238000001514 detection method Methods 0.000 claims description 128
- 239000010408 film Substances 0.000 claims description 109
- 239000010409 thin film Substances 0.000 claims description 96
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 51
- 239000011787 zinc oxide Substances 0.000 claims description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 26
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 18
- 230000002265 prevention Effects 0.000 claims description 18
- 229910052721 tungsten Inorganic materials 0.000 claims description 17
- 150000001805 chlorine compounds Chemical class 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- -1 tungsten nitride Chemical class 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 239000005388 borosilicate glass Substances 0.000 claims description 7
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052602 gypsum Inorganic materials 0.000 claims description 7
- 239000010440 gypsum Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 229910052863 mullite Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 239000004568 cement Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 4
- 239000011195 cermet Substances 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000003575 carbonaceous material Substances 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 82
- 238000000034 method Methods 0.000 description 20
- 230000004044 response Effects 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 17
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- PQZSQOYXZGDGQW-UHFFFAOYSA-N [W].[Pb] Chemical compound [W].[Pb] PQZSQOYXZGDGQW-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 229910052801 chlorine Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 8
- 235000019270 ammonium chloride Nutrition 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- 125000001309 chloro group Chemical group Cl* 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000011592 zinc chloride Substances 0.000 description 4
- 235000005074 zinc chloride Nutrition 0.000 description 4
- 230000001464 adherent effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910019974 CrSi Inorganic materials 0.000 description 2
- 229910002060 Fe-Cr-Al alloy Inorganic materials 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
純度99%の石英製基板(縦横:2×2mm、厚さ:0.5mm)の片面の全面に、ソースとしてのシラン(日本酸素社製)及びジボラン(日本酸素社製)と、ホウ素とを用い、減圧CVD法(温度:650℃、圧力:1Pa)により、ホウ素を1モル%含有する多結晶シリコン薄膜(膜厚:5μm)を成膜して抵抗体薄膜を形成した。
純度98%の焼結アルミナ製基板(縦横:2×2mm、厚さ:0.5mm)の片面の全面に、膜厚が500nmのタングステン薄膜をスパッタ法により成膜した。さらに、この薄膜に対してフォトリソグラフィー法を用い、電極としてのタングステンリード層を形成した。
純度98%の焼結アルミナ製基板(縦横:2×2mm、厚さ:0.5mm)の片面の全面に、膜厚が500nmのタングステン薄膜をスパッタ法により成膜した。さらに、この薄膜に対してフォトリソグラフィー法を用い、電極としてのタングステンリード層を形成した。
Claims (6)
- 電気絶縁性基板と、該電気絶縁性基板の一方の面に形成された抵抗体薄膜と、該抵抗体薄膜上に形成された絶縁層と、該絶縁層上に形成されたガス検出材料膜と、該ガス検出材料膜の前記絶縁層側とは反対側の面は露出し、それ以外の部位は被覆するように設けられた拡散防止層と、該拡散防止層を被覆するように設けられた保温層と、を備え、
前記抵抗体薄膜の膜厚が、50nm〜10μmの範囲内にあり、
前記拡散防止層は、前記保温層の構成成分が前記抵抗体薄膜に拡散するのを防止する層であることを特徴とするガスセンサ。 - 前記拡散防止層が、シリカ、窒化ケイ素及びアルミナからなる群より選択される少なくとも1種からなることを特徴とする請求項1に記載のガスセンサ。
- 前記ガス検出材料膜が、酸化亜鉛粒子と、該酸化亜鉛粒子の表面に存在する塩素化合物と、を含む水素ガス検出材料からなることを特徴とする請求項1又は2に記載のガスセンサ。
- 前記抵抗体薄膜が、金属、窒化物、サーメット、シリサイド、ポリシリコン、炭化ケイ素、又は炭素材料からなることを特徴とする請求項1〜3のいずれか1項に記載のガスセンサ。
- 前記電気絶縁性基板が、金属、アルミナ、酸化ベリリウム、炭化ケイ素、炭化タングステン、窒化ホウ素、窒化タングステン、窒化アルミニウム、石膏、シリカ、ムライト、ジルコニア、又はホウケイ酸ガラスからなることを特徴とする請求項1〜4のいずれか1項に記載のガスセンサ。
- 前記保温層が、耐火セメント、石膏、シリカ、ムライト、ジルコニア及びホウケイ酸ガラスからなる群より選択される少なくとも1種からなることを特徴とする請求項1〜5のいずれか1項に記載のガスセンサ。
Priority Applications (1)
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JP2004076859A JP4639618B2 (ja) | 2004-03-17 | 2004-03-17 | ガスセンサ |
Applications Claiming Priority (1)
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JP2004076859A JP4639618B2 (ja) | 2004-03-17 | 2004-03-17 | ガスセンサ |
Publications (2)
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JP2005265545A JP2005265545A (ja) | 2005-09-29 |
JP4639618B2 true JP4639618B2 (ja) | 2011-02-23 |
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JP2004076859A Expired - Lifetime JP4639618B2 (ja) | 2004-03-17 | 2004-03-17 | ガスセンサ |
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Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61223644A (ja) * | 1985-03-29 | 1986-10-04 | Nohmi Bosai Kogyo Co Ltd | 水素ガス検出素子及びその製法 |
JPH01206252A (ja) * | 1988-02-12 | 1989-08-18 | Figaro Eng Inc | ガス検出方法及びその装置 |
JPH05322821A (ja) * | 1992-05-21 | 1993-12-07 | Fuji Electric Co Ltd | ガスセンサ |
JPH06160326A (ja) * | 1992-04-23 | 1994-06-07 | Nippon Ceramic Co Ltd | 半導体薄膜式ガスセンサ |
JPH06347432A (ja) * | 1993-06-04 | 1994-12-22 | Tokuyama Soda Co Ltd | ガスセンサ |
JPH0792125A (ja) * | 1993-09-27 | 1995-04-07 | Figaro Eng Inc | ガスセンサ及びその製造方法 |
JPH07181158A (ja) * | 1993-12-24 | 1995-07-21 | Nohmi Bosai Ltd | 環境センサ |
JPH07181159A (ja) * | 1993-12-24 | 1995-07-21 | Nohmi Bosai Ltd | 環境センサ |
JPH1183777A (ja) * | 1997-09-12 | 1999-03-26 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
JP2000292395A (ja) * | 1999-04-02 | 2000-10-20 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
JP2000292396A (ja) * | 1999-04-02 | 2000-10-20 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
JP2002328108A (ja) * | 2001-05-02 | 2002-11-15 | Ngk Spark Plug Co Ltd | 水素ガス検出素子及びその製造方法 |
JP2002328109A (ja) * | 2001-05-02 | 2002-11-15 | Ngk Spark Plug Co Ltd | 水素ガス検出素子及びその製造方法 |
JP2003215092A (ja) * | 2002-01-25 | 2003-07-30 | Matsushita Electric Ind Co Ltd | ガスセンサ |
JP2005265546A (ja) * | 2004-03-17 | 2005-09-29 | Tdk Corp | 水素ガス検出材料及びこれを用いた水素ガスセンサ |
-
2004
- 2004-03-17 JP JP2004076859A patent/JP4639618B2/ja not_active Expired - Lifetime
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61223644A (ja) * | 1985-03-29 | 1986-10-04 | Nohmi Bosai Kogyo Co Ltd | 水素ガス検出素子及びその製法 |
JPH01206252A (ja) * | 1988-02-12 | 1989-08-18 | Figaro Eng Inc | ガス検出方法及びその装置 |
JPH06160326A (ja) * | 1992-04-23 | 1994-06-07 | Nippon Ceramic Co Ltd | 半導体薄膜式ガスセンサ |
JPH05322821A (ja) * | 1992-05-21 | 1993-12-07 | Fuji Electric Co Ltd | ガスセンサ |
JPH06347432A (ja) * | 1993-06-04 | 1994-12-22 | Tokuyama Soda Co Ltd | ガスセンサ |
JPH0792125A (ja) * | 1993-09-27 | 1995-04-07 | Figaro Eng Inc | ガスセンサ及びその製造方法 |
JPH07181158A (ja) * | 1993-12-24 | 1995-07-21 | Nohmi Bosai Ltd | 環境センサ |
JPH07181159A (ja) * | 1993-12-24 | 1995-07-21 | Nohmi Bosai Ltd | 環境センサ |
JPH1183777A (ja) * | 1997-09-12 | 1999-03-26 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
JP2000292395A (ja) * | 1999-04-02 | 2000-10-20 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
JP2000292396A (ja) * | 1999-04-02 | 2000-10-20 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
JP2002328108A (ja) * | 2001-05-02 | 2002-11-15 | Ngk Spark Plug Co Ltd | 水素ガス検出素子及びその製造方法 |
JP2002328109A (ja) * | 2001-05-02 | 2002-11-15 | Ngk Spark Plug Co Ltd | 水素ガス検出素子及びその製造方法 |
JP2003215092A (ja) * | 2002-01-25 | 2003-07-30 | Matsushita Electric Ind Co Ltd | ガスセンサ |
JP2005265546A (ja) * | 2004-03-17 | 2005-09-29 | Tdk Corp | 水素ガス検出材料及びこれを用いた水素ガスセンサ |
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