JP4637376B2 - レーザ照射装置及び半導体装置の作製方法 - Google Patents

レーザ照射装置及び半導体装置の作製方法 Download PDF

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Publication number
JP4637376B2
JP4637376B2 JP2001024659A JP2001024659A JP4637376B2 JP 4637376 B2 JP4637376 B2 JP 4637376B2 JP 2001024659 A JP2001024659 A JP 2001024659A JP 2001024659 A JP2001024659 A JP 2001024659A JP 4637376 B2 JP4637376 B2 JP 4637376B2
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film
laser beam
reflecting mirror
laser
tft
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JP2001291681A (ja
JP2001291681A5 (enExample
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幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
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JP2001024659A 2000-02-02 2001-01-31 レーザ照射装置及び半導体装置の作製方法 Expired - Fee Related JP4637376B2 (ja)

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JP2001024659A JP4637376B2 (ja) 2000-02-02 2001-01-31 レーザ照射装置及び半導体装置の作製方法

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JP2000024615 2000-02-02
JP2000-24615 2000-02-02
JP2001024659A JP4637376B2 (ja) 2000-02-02 2001-01-31 レーザ照射装置及び半導体装置の作製方法

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JP2001291681A JP2001291681A (ja) 2001-10-19
JP2001291681A5 JP2001291681A5 (enExample) 2007-12-06
JP4637376B2 true JP4637376B2 (ja) 2011-02-23

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3973882B2 (ja) 2001-11-26 2007-09-12 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
TWI332682B (en) 2002-09-19 2010-11-01 Semiconductor Energy Lab Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
US7327916B2 (en) 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
SG137674A1 (en) 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7245802B2 (en) 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
EP1708008B1 (en) 2005-04-01 2011-08-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradition apparatus
KR101611999B1 (ko) * 2010-02-04 2016-04-14 삼성디스플레이 주식회사 접착제, 접착제를 갖는 표시 장치, 표시 장치의 제조 방법 및 본딩 장치
JP6711333B2 (ja) 2017-08-16 2020-06-17 日亜化学工業株式会社 発光装置
JP7041372B2 (ja) * 2020-05-27 2022-03-24 日亜化学工業株式会社 発光装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384788A (ja) * 1986-09-29 1988-04-15 Nippon Steel Corp レ−ザビ−ムの照射制御方法および装置
JPH02187294A (ja) * 1989-01-13 1990-07-23 Nec Corp レーザビーム整形装置
JP3623818B2 (ja) * 1995-03-02 2005-02-23 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP2001244213A (ja) * 1999-12-24 2001-09-07 Semiconductor Energy Lab Co Ltd レーザ照射装置並びに半導体装置の作製方法

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